Plasma etching apparatus

Abstract

A plasma etching apparatus for processing a sample placed within a processing chamber having a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber and a removable member which constitutes an inner wall surface of the processing chamber. The removable member is thermally conductive and is held on the sidewall member and movable therefrom for removal from the processing chamber. The sample is processed in the processing chamber while controlling a temperature of the removable member.

What is claimed is:  
     
         1 . A plasma etching apparatus for processing a sample placed within a processing chamber comprising: 
 a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber; and    a removable member which constitutes an inner wall surface of the processing chamber, the removable member being thermally conductive and being held on the sidewall member and movable therefrom for removal from the processing chamber;    wherein the sample is processed in the processing chamber while controlling a temperature of the removable member.    
     
     
         2 . A plasma processing chamber as defined in  claim 1 , wherein a controller controls the temperature of the removable member.  
     
     
         3 . A plasma etching apparatus as defined in  claim 1 , wherein the controller controls the temperature of the removable member to be lower than a temperature of the sample.  
     
     
         4 . A plasma etching apparatus as defined in  claim 1 , wherein a film is formed on a surface of the removable member constituting the inner wall surface of the processing chamber.  
     
     
         5 . A plasma etching apparatus as defined in  claim 4 , wherein the thickness of the film formed on the surface of the removable member is 200 μm at a maximum.  
     
     
         6 . A plasma etching apparatus as defined in  claim 2 , wherein the controller controls the temperature of the removable member in a range of 0° C.-50° C. while the sample is processed.  
     
     
         7 . A plasma etching apparatus as defined in  claim 3 , wherein the controller controls the temperature of the removable member in a range of 0°-50° C. while the sample is processed.  
     
     
         8 . A plasma etching apparatus as defined in  claim 1 , wherein a controller controls the temperature of the removable member by circulating a heat exchanging fluid through an interior of the removable member.  
     
     
         9 . A plasma etching apparatus for processing a sample placed within a processing chamber comprising: 
 a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber; and    a removable member which constitutes an inner wall surface of the processing chamber, the removable member being thermally conductive and adapted to be held on the sidewall member and movable therefrom as the inner wall surface of the processing chamber which his removable from the processing chamber;    wherein the sample is processed in the processing chamber while controlling a temperature of the removable member.    
     
     
         10 . A plasma processing chamber as defined in  claim 9 , wherein a controller controls the temperature of the removable member.  
     
     
         11 . A plasma etching apparatus as defined in  claim 10 , wherein the controller controls the temperature of the removable member to be lower than a temperature of the sample.  
     
     
         12 . A plasma etching apparatus as defined in  claim 9 , wherein a film is formed on a surface of the removable member constituting the inner wall surface of the processing chamber.  
     
     
         13 . A plasma etching apparatus as defined in  claim 12 , wherein the thickness of the film formed on the surface of the removable member is 200 μm at a maximum.  
     
     
         14 . A plasma etching apparatus as defined in  claim 10 , wherein the controller controls the temperature of the removable member in a range of 0° C.-50° C. while the sample is processed.  
     
     
         15 . A plasma etching apparatus as defined in  claim 11 , wherein the controller controls the temperature of the removable member in a range of 0°-50° C. while the sample is processed.  
     
     
         16 . A plasma etching apparatus as defined in  claim 9 , wherein a controller controls the temperature of the removable member by circulating a heat exchanging fluid through an interior of the removable member.