US2003219929A1PendingUtilityA1
Laser-assisted silicide fuse programming
Est. expiryMay 24, 2021(expired)· nominal 20-yr term from priority
Inventors:Ting Tsui
H10W 20/493H10W 20/494
40
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A method is provided, the method comprising programming a silicide fuse by passing a current through the silicide fuse while substantially simultaneously irradiating the silicide fuse with a laser.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1 . A method comprising:
programming a silicide fuse by passing a current through the silicide fuse while substantially simultaneously irradiating the silicide fuse with a laser.
2 . The method of claim 1 , wherein passing the current through the silicide fuse comprises subjecting the silicide fuse to a voltage of no more than about 2 V.
3 . The method of claim 1 , wherein irradiating the silicide fuse with the laser comprises irradiating the silicide fuse with a high intensity laser.
4 . The method of claim 2 , wherein irradiating the silicide fuse with the laser comprises irradiating the silicide fuse with a high intensity laser.
5 . The method of claim 1 , wherein irradiating the silicide fuse with the laser comprises irradiating the silicide fuse with a pulsed laser.
6 . The method of claim 5 , wherein irradiating the silicide fuse with the pulsed laser comprises irradiating the silicide fuse with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
7 . The method of claim 2 , wherein irradiating the silicide fuse with the laser comprises irradiating the silicide fuse with a pulsed laser.
8 . The method of claim 7 , wherein irradiating the silicide fuse with the pulsed laser comprises irradiating the silicide fuse with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
9 . The method of claim 3 , wherein irradiating the silicide fuse with the high intensity laser comprises irradiating the silicide fuse with a pulsed high intensity laser.
10 . The method of claim 9 , wherein irradiating the silicide fuse with the pulsed high intensity laser comprises irradiating the silicide fuse with the pulsed high intensity laser for a time period in a range of about 1 microsecond to about 2 seconds.
11 . A method comprising:
programming a plurality of silicide fuses by passing a current through at least one of the plurality of silicide fuses while substantially simultaneously irradiating the at least one of the plurality of silicide fuses with a laser.
12 . The method of claim 11 , wherein passing the current through the at least one of the plurality of silicide fuses comprises subjecting the at least one of the plurality of silicide fuses to a voltage of no more than about 2 V.
13 . The method of claim 11 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a high intensity laser.
14 . The method of claim 12 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a high intensity laser.
15 . The method of claim 11 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed laser.
16 . The method of claim 15 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
17 . The method of claim 12 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed laser.
18 . The method of claim 17 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
19 . The method of claim 13 , wherein irradiating the at least one of the plurality of silicide fuses with the high intensity laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed high intensity laser.
20 . The method of claim 19 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed high intensity laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed high intensity laser for a time period in a range of about 1 microsecond to about 2 seconds.
21 . A method comprising:
forming a plurality of semiconductor devices; forming a plurality of silicide fuses between at least some of the plurality of semiconductor devices; and programming the plurality of silicide fuses by passing a current through at least one of the plurality of silicide fuses while substantially simultaneously irradiating the at least one of the plurality of silicide fuses with a laser.
22 . The method of claim 21 , wherein passing the current through the at least one of the plurality of silicide fuses comprises subjecting the at least one of the plurality of silicide fuses to a voltage of no more than about 2 V.
23 . The method of claim 21 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a high intensity laser.
24 . The method of claim 22 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a high intensity laser.
25 . The method of claim 21 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed laser.
26 . The method of claim 25 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
27 . The method of claim 22 , wherein irradiating the at least one of the plurality of silicide fuses with the laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed laser.
28 . The method of claim 27 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed laser for a time period in a range of about 1 microsecond to about 2 seconds.
29 . The method of claim 23 , wherein irradiating the at least one of the plurality of silicide fuses with the high intensity laser comprises irradiating the at least one of the plurality of silicide fuses with a pulsed high intensity laser.
30 . The method of claim 29 , wherein irradiating the at least one of the plurality of silicide fuses with the pulsed high intensity laser comprises irradiating the at least one of the plurality of silicide fuses with the pulsed high intensity laser for a time period in a range of about 1 microsecond to about 2 seconds.Join the waitlist — get patent alerts
Track US2003219929A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.