Inventor · disambiguated record
Ting Tsui
Also filed as: TSUI TING · TSUI TING Y · TSUI TING YIU
28 granted patents·11 pending applications·460 citations·filing 1998–2010
97Inventor score
Top patents by PatentIndex Score
39 records- 0190US7442597B2Systems and methods that selectively modify liner induced stressTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 28, 2008·18 cites·18 claims
- 0288US6498112B1Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) filmsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 24, 2002·34 cites·16 claims
- 0384US6339958B1Adhesion strength testing using a depth-sensing indentation techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 22, 2002·68 cites·7 claims
- 0482US6053034AMethod for measuring fracture toughness of thin filmsADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 25, 2000·58 cites·34 claims
- 0581US6780756B1Etch back of interconnect dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 24, 2004·27 cites·42 claims
- 0679US6489238B1Method to reduce photoresist contamination from silicon carbide filmsTEXAS INSTRUMENTS INC·Filed 2001·Granted Dec 3, 2002·21 cites·12 claims
- 0777US6242790B1Using polysilicon fuse for IC programmingADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·53 cites·6 claims
- 0873US6583070B1Semiconductor device having a low dielectric constant materialADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 24, 2003·17 cites·8 claims
- 0969US6208030B1Semiconductor device having a low dielectric constant materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·31 cites·4 claims
- 1068US7678713B2Energy beam treatment to improve packaging reliabilityTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 16, 2010·4 cites·16 claims
- 1168US6607945B2Laser-assisted silicide fuse programmingADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 19, 2003·12 cites·34 claims
- 1266US6881665B1Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresistADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 19, 2005·13 cites·20 claims
- 1364US7342315B2Method to increase mechanical fracture robustness of porous low k dielectric materialsTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 11, 2008·2 cites·16 claims
- 1460US7341941B2Methods to facilitate etch uniformity and selectivityTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 11, 2008·2 cites·19 claims
- 1560US6023327ASystem and method for detecting defects in an interlayer dielectric of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 8, 2000·23 cites·29 claims
- 1659US7268073B2Post-polish treatment for inhibiting copper corrosionTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 11, 2007·9 cites·8 claims
- 1759US6147507ASystem and method of mapping leakage current and a defect profile of a semiconductor dielectric layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 14, 2000·20 cites·21 claims
- 1857US6309942B1STI punch-through defects and stress reduction by high temperature oxide reflow processADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 30, 2001·21 cites·23 claims
- 1956US6407558B2Method of determining the doping concentration across a surface of a semiconductor materialADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 18, 2002·4 cites·6 claims
- 2054US7282436B2Plasma treatment for silicon-based dielectricsTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 16, 2007·4 cites·52 claims
- 2153US7939400B2Systems and methods that selectively modify liner induced stressTEXAS INSTRUMENTS INC·Filed 2008·Granted May 10, 2011·0 cites·9 claims
- 2251US2009081864A1SiC Film for Semiconductor ProcessingTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 2346US6806103B1Method for fabricating semiconductor devices that uses efficient plasmasTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 19, 2004·2 cites·17 claims
- 2445US2011034023A1Silicon carbide film for integrated circuit fabricationTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 2544US6903000B2System for improving thermal stability of copper damascene structureTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 7, 2005·1 cites·8 claims
- 2644US2005186788A1System for improving thermal stability of copper damascene structureFiled 2005·Application pending·0 cites
- 2742US7682989B2Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesionTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 23, 2010·0 cites·14 claims
- 2842US7087518B2Method of passivating and/or removing contaminants on a low-k dielectric/copper surfaceTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 8, 2006·0 cites·7 claims
- 2942US6177802B1System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effectADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 23, 2001·9 cites·29 claims
- 3042US2007105368A1Method of fabricating a microelectronic device using electron beam treatment to induce stressTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 3142US2007210421A1Semiconductor device fabricated using a carbon-containing film as a contact etch stop layerTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 3240US2003219929A1Laser-assisted silicide fuse programmingADVANCED MICRO DEVICES INC·Filed 2003·Application pending·0 cites
- 3340US2006264028A1Energy beam treatment to improve the hermeticity of a hermetic layerTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 3440US2006264042A1Interconnect structure including a silicon oxycarbonitride layerTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 3539US2003170992A1Method of passivating and/or removing contaminants on a low-k dielectric/copper surfaceFiled 2002·Application pending·0 cites
- 3639US2004169279A1Etch back of interconnect dielectricsFiled 2003·Application pending·0 cites
- 3736US2003027413A1Method to improve the adhesion of dielectric layers to copperFiled 2001·Application pending·0 cites
- 3834US6320403B1Method of determining the doping concentration and defect profile across a surface of a processed semiconductor materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 20, 2001·4 cites·15 claims
- 3934US6208154B1Method of determining the doping concentration across a surface of a semiconductor materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·3 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →