US2004009087A1PendingUtilityA1
Physical vapor deposition targets, and methods of forming physical vapor deposition targets
Priority: Jul 10, 2002Filed: Apr 1, 2003Published: Jan 15, 2004
Est. expiryJul 10, 2022(expired)· nominal 20-yr term from priority
Y10T428/12389B22F 5/007C23C 14/3414B22F 2998/00
35
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
The invention includes methods of forming physical vapor deposition targets, and includes targets and target assemblies. The methods of forming the targets comprise hot-pressing or die forging of suitable materials to form a target blank. The target blank has a pair of opposing surfaces, with one of the opposing surfaces having a topography that is substantially an inverse of an expected wear profile. The target blank can be bonded to a backing plate to form a target assembly or can be utilized as a monolithic target.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1 . A method of forming a PVD target, comprising:
determining an expected wear profile of the target; hot pressing one or more powders to form a target blank; the target blank having a pair of opposing surfaces; one of the opposing surfaces being substantially flat and the other of the opposing surfaces having a topography that is substantially an inverse of the expected wear profile; and bonding the target blank to a backing plate to form a target assembly; said other of the opposing surfaces extending outwardly from the target assembly as a sputtering surface of the assembly.
2 . The method of claim 1 further comprising, after the hot pressing, machining said other of the surfaces to refine the topography of the surface to more closely approximate the inverse of the expected wear profile than before the machining.
3 . The method of claim 1 wherein the machining is performed prior to the bonding.
4 . The method of claim 1 wherein the machining is performed after the bonding.
5 . The method of claim 1 wherein the one or more powders predominately comprise tantalum.
6 . The method of claim 1 wherein the one or more powders consist essentially of tantalum.
7 . The method of claim 1 wherein the one or more powders predominately comprise tungsten.
8 . The method of claim 1 wherein the one or more powders consist essentially of tungsten.
9 . The method of claim 1 wherein the one or more powders comprise a mixture of tungsten and titanium.
10 . The method of claim 1 wherein the one or more powders consist essentially of a mixture of tungsten and titanium.
11 . A method of forming and using a PVD target, comprising:
determining an expected wear profile of the target; hot pressing one or more powders to form a target blank; the target blank having a pair of opposing surfaces; one of the opposing surfaces having a topography that is substantially an inverse of the expected wear profile; and using said one of the opposing surfaces as a sputtering surface during physical vapor deposition.
12 . The method of claim 11 further comprising bonding the target to a backing plate prior to the physical vapor deposition.
13 . The method of claim 11 wherein the target is a monolithic target.
14 . A method of forming a PVD target, comprising:
determining an expected wear profile of the target; and die forging a malleable material to form a target blank; the target blank having a pair of opposing surfaces; one of the opposing surfaces being substantially flat and the other of the opposing surfaces having a topography that is substantially an inverse of the expected wear profile.
15 . A method of forming and using a PVD target, comprising:
determining an expected wear profile of the target; die forging a malleable material to form a target blank; the target blank having a pair of opposing surfaces; one of the opposing surfaces having a topography that is substantially an inverse of the expected wear profile; and using said one of the opposing surfaces as a sputtering surface during physical vapor deposition.
16 . The method of claim 15 further comprising bonding the target to a backing plate prior to the physical vapor deposition.
17 . The method of claim 15 wherein the target is a monolithic target.
18 . A method of forming a PVD target, comprising:
determining an expected wear profile of the target; die forging a malleable material to form a target blank; the target blank having a pair of opposing surfaces; one of the opposing surfaces being substantially flat and the other of the opposing surfaces having a topography that is substantially an inverse of the expected wear profile; and bonding the target blank to a backing plate to form a target assembly; said other of the opposing surfaces extending outwardly from the target assembly as a sputtering surface of the assembly.
19 . The method of claim 18 further comprising, after the die forging, machining said other of the surfaces to refine the topography of the surface to more closely approximate the inverse of the expected wear profile.
20 . The method of claim 18 wherein the machining is performed prior to the bonding.
21 . The method of claim 18 wherein the machining is performed after the bonding.
22 . The method of claim 18 wherein the malleable material comprises one or more of Cu, Ta, Mo, Ti, Al, Ni, Co and Au.
23 . The method of claim 18 wherein the malleable material consists essentially of one or more of Cu, Ta, Mo, Ti, Al, Ni, Co and Au.
24 . A PVD target consisting essentially of W and having an outer surface with a topography that is substantially an inverse of an expected wear profile of the target.
25 . The PVD target of claim 24 bonded to a backing plate.
26 . A PVD target consisting essentially of W and Ti; the target having an outer surface with a topography that is substantially an inverse of an expected wear profile of the target.
27 . The PVD target of claim 26 bonded to a backing plate.Join the waitlist — get patent alerts
Track US2004009087A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.