Plasma etching apparatus

Abstract

A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber. An antenna is disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber. A dielectric member is disposed with respect to an outer periphery of the antenna, and a member is disposed above the sample in the processing chamber and facing the sample at the outer periphery of the antenna. The sample is processed in the processing chamber while enabling control of a temperature on a surface of the member.

What is claimed is:  
     
         1 . A plasma etching apparatus for etching of a sample comprising: 
 an etching chamber, the sample being disposed in said etching chamber; and    a plasma generator which generates a plasma for performing etching of said sample in said etching chamber;    wherein said plasma generator includes an antenna disposed above the sample for radiating electromagnetic waves toward an interior of said etching chamber, a dielectric member disposed with respect to an outer periphery of said antenna, and a member disposed above the sample in the processing chamber and fading the sample at the outer periphery of said antenna, the sample being processed while enabling control of a temperature on a surface of said member.    
     
     
         2 . A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber comprising an antenna disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber, a dielectric member disposed with respect to an outer periphery of the antenna, and a member disposed above the sample in the processing chamber and facing the sample at the outer periphery of the antenna, wherein the sample is processed while enabling control of a temperature on a surface of the member.  
     
     
         3 . A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber comprising an antenna disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber, a dielectric member disposed with respect to an outer periphery of the antenna, and a member disposed below the dielectric member and facing an interior of the processing chamber, wherein the sample is processed while enabling control of a temperature on a surface of the member.  
     
     
         4 . A plasma etching apparatus according to  claim 2 , wherein the electromagnetic waves are supplied by way of the dielectric member to the inside of the processing chamber.  
     
     
         5 . A plasma etching apparatus according to  claim 2 , wherein the surface of the member is heated.  
     
     
         6 . A plasma etching apparatus according to  claim 5 , further comprising a heating device for heating the surface of the member.  
     
     
         7 . A plasma etching apparatus according to  claim 6 , wherein the heating device is disposed outside of the processing chamber.  
     
     
         8 . A plasma etching apparatus according to  claim 2 , wherein a portion of an electric power supplied to the antenna is supplied to the member.  
     
     
         9 . A plasma etching apparatus according to  claim 2 , wherein the dielectric member and the member are ring-shaped.  
     
     
         10 . A plasma etching apparatus according to  claim 3 , wherein the electromagnetic waves are supplied by way of the dielectric member to the inside of the processing chamber.  
     
     
         11 . A plasma etching apparatus according to  claim 3 , wherein the surface of the member is heated.  
     
     
         12 . A plasma etching apparatus according to  claim 11 , further comprising a heating device for heating the surface of the member.  
     
     
         13 . A plasma etching apparatus according to  claim 12 , wherein the heating device is disposed outside of the processing chamber.  
     
     
         14 . A plasma etching apparatus according to  claim 3 , wherein a portion of an electric power supplied to the antenna is supplied to the member.  
     
     
         15 . A plasma etching apparatus according to  claim 3 , wherein the dielectric member and the member are ring-shaped.