US2004106014A1PendingUtilityA1

Microwave tunable device having ferroelectric/dielectric BST film

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Priority: Nov 29, 2002Filed: Oct 20, 2003Published: Jun 3, 2004
Est. expiryNov 29, 2022(expired)· nominal 20-yr term from priority
Inventors:Seung Jun MoonEun Kyoung KimWon-Jeong KimSu Jae LeeKwang Yong Kang
H10D 84/00H01G 7/06H01G 4/1227
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Claims

Abstract

Provided is a microwave tunable device including a ferroelectric/dielectric (Ba 1-x ,Sr x )TiO 3 (BST) thin film that can reduce dielectric loss of a ferroelectric/dielectric BST thin film. The microwave tunable device of the present research includes: a substrate; and a ferroelectric/dielectric (Ba 1-x ,Sr x )TiO 3 (BST) thin film of a ( 111 ) direction which is formed on the substrate. The technology of this research embodies a microwave tunable device by using a ferroelectric/dielectric BST thin film grown in the ( 111 ) direction to overcome the limitation of conventional technologies and improve the problem of dielectric loss.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A microwave tunable device, comprising: 
 a substrate; and    a ferroelectric/dielectric (Ba 1-x ,Sr x )TiO 3  (BST) thin film of a ( 111 ) direction which is formed on the substrate.    
     
     
         2 . The microwave tunable device as recited in  claim 1 , wherein the ferroelectric/dielectric BST thin film is grown by performing a laser ablation.  
     
     
         3 . The microwave tunable device as recited in  claim 1 , wherein the substrate is an MgO substrate.

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