US2004108028A1PendingUtilityA1

High purity nickel/vanadium sputtering components; and methods of making sputtering components

34
Priority: Dec 9, 2002Filed: Nov 25, 2003Published: Jun 10, 2004
Est. expiryDec 9, 2022(expired)· nominal 20-yr term from priority
Inventors:Wei GuoStephen TurnerEdward Cawley
H01J 37/3426C23C 14/3414C22C 19/03
34
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Claims

Abstract

The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni—V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni—V structures.

Claims

exact text as granted — not AI-modified
The invention claimed is:  
     
         1 . A nickel-vanadium sputtering component structure comprising at least 99.99 weight %, excluding gases, nickel and vanadium.  
     
     
         2 . The sputtering component structure of  claim 1  being at least 99.995 weight %, excluding gases, nickel and vanadium.  
     
     
         3 . The sputtering component structure of  claim 1  being at least 99.999 weight %, excluding gases, nickel and vanadium.  
     
     
         4 . The sputtering component structure of  claim 1  as a sputtering target structure.  
     
     
         5 . The sputtering target structure of  claim 4  as a sputtering target pre-fab.  
     
     
         6 . The sputtering target structure of  claim 4  as a sputtering target.  
     
     
         7 . A nickel/vanadium sputtering component structure comprising at least 99.99 weight %, excluding gases, nickel and vanadium and having an average grain size throughout the structure of less than or equal to about 40 microns.  
     
     
         8 . The nickel/vanadium sputtering component structure of  claim 7  as a sputtering component pre-fab.  
     
     
         9 . The nickel/vanadium sputtering component structure of  claim 7  as a sputtering component.  
     
     
         10 . The nickel/vanadium sputtering component of  claim 9  wherein the average grain size is less than or equal to about 30 microns.  
     
     
         11 . The nickel/vanadium sputtering component of  claim 9  wherein the average grain size is less than or equal to about 20 microns.  
     
     
         12 . The nickel/vanadium sputtering component of  claim 9  comprising from about 4 weight percent vanadium to about 10 weight percent vanadium.  
     
     
         13 . The nickel/vanadium sputtering component of  claim 9  comprising about 7 weight percent vanadium.  
     
     
         14 . The nickel/vanadium sputtering component of  claim 9  as a sputtering target.  
     
     
         15 . A layer sputter-deposited from the sputtering target of  claim 14 .  
     
     
         16 . The nickel/vanadium sputtering component of  claim 9  comprising at least 99.995 weight %, excluding gases, nickel and vanadium.  
     
     
         17 . The nickel/vanadium sputtering component of  claim 16  wherein the average grain size is less than or equal to about 30 microns.  
     
     
         18 . The nickel/vanadium sputtering component of  claim 16  wherein the average grain size is less than or equal to about 20 microns.  
     
     
         19 . The nickel/vanadium sputtering component of  claim 16  comprising from about 4 weight percent vanadium to about 10 weight percent vanadium.  
     
     
         20 . The nickel/vanadium sputtering component of  claim 9  comprising at least 99.999 weight %, excluding gases, nickel and vanadium.  
     
     
         21 . The nickel/vanadium sputtering component of  claim 20  wherein the average grain size is less than or equal to about 30 microns.  
     
     
         22 . The nickel/vanadium sputtering component of  claim 20  wherein the average grain size is less than or equal to about 20 microns.  
     
     
         23 . The nickel/vanadium sputtering component of  claim 20  comprising from about 4 weight percent vanadium to about 10 weight percent vanadium.  
     
     
         24 . A method for producing a nickel/vanadium structure, comprising: 
 providing a nickel material which is at least 99.99 weight %, excluding gases, pure in nickel;    providing a vanadium material which is at least 99.99 weight %, excluding gases, pure in vanadium;    melting the nickel and vanadium materials together form a molten nickel/vanadium alloy from the nickel and vanadium materials; and    cooling the nickel/vanadium alloy to form a nickel/vanadium structure, the nickel/vanadium structure being at least 99.99 weight %, excluding gases, pure in nickel and vanadium.    
     
     
         25 . The method of  claim 24  wherein the nickel/vanadium structure comprises from about 4 weight percent vanadium to about 10 weight percent vanadium.  
     
     
         26 . The method of  claim 24  wherein the nickel/vanadium structure comprises about 7% vanadium.  
     
     
         27 . The method of  claim 24  wherein the vanadium material is at least 99.995 weight %, excluding gases, pure in vanadium.  
     
     
         28 . The method of  claim 24  wherein the nickel material is at least 99.995 weight %, excluding gases, pure in nickel; wherein the vanadium material is at least 99.995 weight %, excluding gases, pure in vanadium; and wherein the nickel/vanadium structure is at least 99.995%, excluding gases, pure in nickel and vanadium.  
     
     
         29 . The method of  claim 24  wherein the vanadium material is at least 99.999 weight %, excluding gases, pure in vanadium.  
     
     
         30 . The method of  claim 24  wherein the nickel material is at least 99.999 weight %, excluding gases, pure in nickel; wherein the vanadium material is at least 99.999 weight %, excluding gases, pure in vanadium; and wherein the nickel/vanadium structure is at least 99.999%, excluding gases, pure in nickel and vanadium.  
     
     
         31 . The method of  claim 24  wherein the nickel/vanadium structure comprises an average grain size throughout the structure of greater than 40 microns, the method further comprising subjecting the nickel/vanadium structure to thermo-mechanical processing to reduce the average grain size to less than or equal to 40 microns.  
     
     
         32 . The method of  claim 31  further comprising forming a sputtering component from the structure, and wherein an average grain size throughout the sputtering component is less than or equal to 40 microns.  
     
     
         33 . The method of  claim 32  wherein the sputtering component is a sputtering target.  
     
     
         34 . The method of  claim 31  wherein the thermo-mechanical processing produces an average grain size throughout the structure of less than or equal to 30 microns.  
     
     
         35 . The method of  claim 34  further comprising forming a sputtering component from the structure, and wherein an average grain size throughout the sputtering component is less than or equal to 30 microns.  
     
     
         36 . The method of  claim 35  wherein the sputtering component is a sputtering target.  
     
     
         37 . The method of  claim 31  wherein the thermo-mechanical processing produces an average grain size throughout the structure of less than or equal to 20 microns.  
     
     
         38 . The method of  claim 37  further comprising forming a sputtering component from the structure, and wherein an average grain size throughout the sputtering component is less than or equal to 20 microns.  
     
     
         39 . The method of  claim 38  wherein the sputtering component is a sputtering target.

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