Method of forming and treating a metal film, semiconductor device and wiring board

Abstract

A method of forming a metal film of copper on the surface of a resin substrate by successively effecting the conditioning treatment, Pd activation treatment, electroless copper plating treatment and electrolytic copper plating treatment. In the conditioning treatment, a conditioning treatment solution is interposed in the form of a thin layer between the surface and a cover glass plate, and the surface is irradiated with ultraviolet light from the upper side of the cover glass plate. Irradiation with ultraviolet light in the presence of the treatment solution causes the molecules in the surface of the resin to chemically react with the component of the treatment solution, whereby the surface of the resin is more activated to improve the adhesion with copper that is deposited on the surface of the resin.

What is claimed is:  
     
         1 . A method of forming and treating a metal film on the surface of a resin substrate by conducting the treatments according to a step of forming plating nuclei and a step of electroless plating, wherein said surface is irradiated with ultraviolet light through a treatment solution used prior to the step of electroless plating.  
     
     
         2 . A method of forming and treating a metal film according to  claim 1 , wherein said step of electrolytic plating is conducted after a step of electroless plating.  
     
     
         3 . A method of forming and treating a metal film according to  claim 1  or  2 , wherein said treatment solution is a conditioning treatment solution for pre-treating said surface prior to said step of forming plating nuclei.  
     
     
         4 . A method of forming and treating a metal film according to  claim 3 , wherein ultraviolet light is irradiated through said conditioning treatment solution and through a catalyzing treatment solution that is applied to the surface in said step of forming plating nuclei.  
     
     
         5 . A method of forming and treating a metal film according to  claim 4 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.  
     
     
         6 . A method of forming and treating a metal film according to  claim 1  or  2 , wherein said treatment solution is a catalyzing treatment solution applied to said surface in said step of forming plating nuclei.  
     
     
         7 . A method of forming and treating a metal film according to  claim 6 , wherein ultraviolet light is irradiated through a conditioning treatment solution that is used for treating said surface prior to said step of forming plating nuclei and through said catalyzing treatment solution.  
     
     
         8 . A method of forming and treating a metal film according to  claim 7 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.  
     
     
         9 . A semiconductor device having a metal film formed on an insulating resin layer by plating, said metal film being formed on the surface of said resin substrate through a step of forming plating nuclei and a step of electroless plating inclusive of irradiating said surface with ultraviolet light through a treatment solution that is used.  
     
     
         10 . A semiconductor device according to  claim 9 , wherein a step of electrolytic plating treatment is conducted after said step of electroless plating treatment.  
     
     
         11 . A semiconductor device according to  claim 9  or  10 , wherein said treatment solution is a conditioning treatment solution for pre-treating said surface prior to said step of forming plating nuclei.  
     
     
         12 . A semiconductor device according to  claim 11 , wherein ultraviolet light is irradiated through said conditioning treatment solution and through a catalyzing treatment solution that is applied to said surface in said step of forming plating nuclei.  
     
     
         13 . A semiconductor device according to  claim 12 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.  
     
     
         14 . A semiconductor device according to  claim 9  or  10 , wherein said treatment solution is a catalyzing treatment solution applied to said surface in said step of forming plating nuclei.  
     
     
         15 . A semiconductor device according to  claim 14 , wherein ultraviolet light is irradiated through a conditioning treatment solution that is used for treating said surface prior to said step of forming plating nuclei and through said catalyzing treatment solution.  
     
     
         16 . A semiconductor device according to  claim 15 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.  
     
     
         17 . A wiring board having a metal film formed on an insulating resin layer by plating, said metal film being formed on the surface of said resin substrate through a step of forming plating nuclei and a step of electroless plating inclusive of irradiating said surface with ultraviolet light through a treatment solution that is used.  
     
     
         18 . A wiring board according to  claim 17 , wherein a step of electrolytic plating treatment is conducted after said step of electroless plating treatment.  
     
     
         19 . A wiring board according to  claim 17  or  18 , wherein said treatment solution is a conditioning treatment solution for pre-treating said surface prior to said step of forming plating nuclei.  
     
     
         20 . A wiring board according to  claim 19 , wherein ultraviolet light is irradiated through said conditioning treatment solution and through a catalyzing treatment solution that is applied to said surface in said step of forming plating nuclei.  
     
     
         21 . A wiring board according to  claim 20 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.  
     
     
         22 . A wiring board according to  claim 17  or  18 , wherein said treatment solution is a catalyzing treatment solution applied to said surface in said step of forming plating nuclei.  
     
     
         23 . A wiring board according to  claim 22 , wherein ultraviolet light is irradiated through a conditioning treatment solution that is used for treating said surface prior to said step of forming plating nuclei and through said catalyzing treatment solution.  
     
     
         24 . A wiring board according to  claim 23 , wherein said conditioning treatment solution or said catalyzing treatment solution is interposed in the form of a thin layer between a glass plate and said surface.