Film forming method and film forming apparatus

Abstract

After coating a resist for silylation on the semiconductor substrate, the resist is exposed with a pattern. Then the silylation process is performed to form a silylated layer and the silylated layer is hardened with performing an electron beam processing or a ultra-violet ray processing. After that, an etching is performed with using the hardened silylated layer as a mask and the wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.

What is claimed is:  
     
         1 . A film forming method, comprising the steps of: 
 (a) coating a resist film for silylation on a surface of an insulation film of a semiconductor substrate;    (b) exposing a pattern on the resist film for silylation;    (c) performing a silylation process with causing the resist film for silylation chemically react with a compound including silicon and forming a silylated layer;    (d) etching the insulation film using the silylated layer as a mask; and    (e) forming a metal film on the silylated layer without removing the silylated layer used as the mask.    
     
     
         2 . The film forming method as set forth in  claim 1 , 
 wherein the mask is formed with dry etching the silylated layer in the step (d).    
     
     
         3 . The film forming method as set forth in  claim 1 , 
 wherein a step of hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing is provided before the step (d).    
     
     
         4 . The film forming method as set forth in  claim 2 , 
 wherein a step of hardening the silylated layer with performing at least one of electron beam processing and ultraviolet ray processing is provided after the step (d).    
     
     
         5 . The film forming method as set forth in  claim 2 , 
 wherein a step of planarizing the film surface with performing a chemical mechanical polishing using the silylated layer as a stopper is provided after the step (e).    
     
     
         6 . A film forming apparatus disposed adjacent to an aligner selectively exposing a resist film for silylation, an etching apparatus etching an insulation film using a silylated layer as a mask, and a metal film forming apparatus forming a metal film on the silylated layer being used as the mask without removing thereof, comprising: 
 a resist film for silylation forming portion forming a resist film for silylation on a surface of an insulation film formed on a surface of a substrate;    a silylated layer forming portion performing a silylation process for forming a silylated layer with causing the resist film for silylation chemically react with a compound including silicon; and    a transfer mechanism transferring the substrate among the resist film for silylation forming portion, the silylated layer forming portion, the aligner, the etching apparatus and the metal film forming apparatus.    
     
     
         7 . The film forming apparatus as set forth in  claim 6 , 
 wherein the etching apparatus forms the mask with dry etching the silylated layer.    
     
     
         8 . The film forming apparatus disposed adjacent to a hardening process apparatus hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing, as set forth in  claim 6 , 
 wherein the transfer mechanism transfers the substrate to and receives thereof from the hardening process apparatus.    
     
     
         9 . The film forming apparatus disposed adjacent to a planarization processing apparatus planarizing a surface of the insulation film with performing a chemical mechanical polishing using the silylated layer as a stopper as set forth in  claim 6 , 
 wherein the transfer mechanism transfers the substrate to and receives thereof from the planarization processing apparatus.    
     
     
         10 . A film forming apparatus, comprising: 
 a resist film for silylation forming portion forming a resist film for silylation on an insulation film surface formed on the surface of a substrate;    a silylated layer forming portion performing a silylation process and forming a silylated layer with causing the resist film for silylation chemically react with a compound including silicon;    an aligner selectively exposing the resist film for silylation;    an etching portion etching the insulation film with using the silylated layer as a mask;    a metal film forming portion forming a metal film on the silylated layer without removing the silylated layer used as the mask; and    a transfer mechanism transferring the substrate among the silylated layer forming portion, the aligner, the etching poriton, and the metal film forming portion.    
     
     
         11 . The film forming apparatus as set forth in  claim 10 , 
 wherein the etching portion forms the mask with dry etching the silylated layer.    
     
     
         12 . The film forming apparatus as set forth in  claim 10 , further comprising: 
 a hardening process portion hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing.    wherein the transfer mechanism further transfers the substrate to and receives thereof from the hardening process portion.    
     
     
         13 . The film forming apparatus as set forth in  claim 10 , further comprising: 
 a planarization processing portion planarizing the silylated layer with performing a chemical mechanical polishing using the silylated layer as a stopper.    wherein the transfer mechanism further transfers the substrate to and receives thereof from the planarization processing portion.