Method for electroplating metal wire

Abstract

A method for electroplating low-resistance metal wire for resolving the problem to fabricate the metal wire on large-area substrate through the technology of photolithographing and etching in the prior art. Then the invention improves the RC-delay characteristic of circuit on large-area substrate and reduces the number of masks for processing of a structure of gate overlap lightly-doped drain (source) (GOLDD).

What is claimed is:  
     
         1 . A method for electroplating a metal wire, said method of electroplating comprising steps of: 
 depositing a metal seed layer above a substrate; and    forming a plurality of metal wires by patterning and etching the metal layer.    electroplating a metal layer on said metal seed layer;    
     
     
         2 . The method for electroplating metal wire as recited  claim 1 , wherein said metal layer is low-resistance metal material.  
     
     
         3 . The method for electroplating metal wire as recited  claim 1 , wherein the step of electroplating said metal layer on said metal seed layer is carried out by immersing the substrate into an electroplating solution, which includes the metal ions same as said metal layer.  
     
     
         4 . A method for electroplating metal wire, which is used to improve a RC-delay because of a complicate wiring on a large-area substrate, and said method for electroplating comprising steps of: 
 depositing an oxide layer above said substrate;    depositing and patterning a first metal seed layer on said oxide layer;    electroplating a first metal layer on said first metal seed layer;    depositing an inter-layer;    depositing and patterning a second metal seed layer; and    electroplating a second metal layer on said second metal seed layer.    
     
     
         5 . The method for electroplating metal wire as recited  claim 4 , wherein said first metal layer and said second metal layer are low-resistance metal material.  
     
     
         6 . The method for electroplating metal wire as recited  claim 4 , wherein the step of electroplating said first metal layer on said first metal seed layer is carried out by immersing the substrate into a first electroplating solution, which includes the metal ions are the same as said first metal layer.  
     
     
         7 . The method for electroplating metal wire as recited  claim 4 , wherein the step of electroplating said second metal layer on said second metal seed layer is used to be immersed into a second electroplating solution, which includes the metal ions are a kind of said second metal layer.  
     
     
         8 . The method for electroplating metal wire as recited  claim 4 , wherein said isolated layer is an insulating material.  
     
     
         9 . The method for electroplating metal wire as recited  claim 4 , wherein said isolated layer is used to isolate each electrode.  
     
     
         10 . A method for electroplating metal wire, which is used to improve a RC-delay because of a complicate wiring on a large-area substrate, and reducing mask number for a processing of a structure of gate overlap lightly-doping drain (source), said method for electroplating comprising steps of: 
 coating an isolated layer above a substrate;    depositing an semiconductor layer above said isolated layer;    and patterning the semiconductor layer, said an active layer depositing and patterning a metal seed layer on said oxide layer;    doping light-dose ions of impurity;    electroplating a metal layer on said metal seed layer; and    doping high-dose ions of impurity.    
     
     
         11 . The depositing an semiconductor layer as recited  claim 10 , wherein said semiconductor layer is Si, Ge, SiGe.  
     
     
         12 . The method for electroplating metal wire as recited  claim 10 , wherein said metal layer is low-resistance metal material.  
     
     
         13 . The method for electroplating metal wire as recited  claim 10 , wherein said isolated layer is used to isolate each electrode.  
     
     
         14 . The method for electroplating metal wire as recited  claim 10 , wherein the step of doping light-dose ions of impurity is performed by ion-implantation or ion shower.  
     
     
         15 . The method for electroplating metal wire as recited  claim 10 , wherein the step of doping high-dose ions of impurity is performed by ion-implantation or ion shower.  
     
     
         16 . The method for electroplating metal wire as recited  claim 10 , wherein the step of electroplating said metal layer on said metal seed layer is carried out by immersing the substrate into an electroplating solution, which includes the metal ions the same as said metal layer.