US2004194813A1PendingUtilityA1

Process for removing dopant ions from a substrate

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Assignee: RIGGS DAVID BPriority: Oct 5, 2001Filed: May 17, 2004Published: Oct 7, 2004
Est. expiryOct 5, 2021(expired)· nominal 20-yr term from priority
H10P 70/12B08B 7/00
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Claims

Abstract

A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.

Claims

exact text as granted — not AI-modified
1 . A method of cleaning a surface of a partially manufactured integrated circuit  
       subsequent to implantation of dopant ions into the surface, wherein the surface contains dopant ions, the method comprising: coating the surface containing dopant ions with a non-aqueous organic solvent selected from the group consisting of ketones, polyhydric alcohols, cyclic ethers and esters; and  
       removing the solvent and the dopant ions from the surface.  
     
     
         2 . The method according to  claim 1 , wherein the surface is a collar region in a  
       deep trench.  
     
     
         3 . The method according to  claim 1 , further comprising rinsing the partially  
       manufactured integrated circuit with deionized water.  
     
     
         4 . The method according to  claim 1 , wherein the solvent is selected from the  
       group consisting of acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone and 2-heptanone, ethyleneglycol, ethyleneglycol monoacetate, diethyleneglycol, diethyleneglycol monoacetate, propyleneglycol, propyleneglycol monoacetate, dipropyleneglycol and dipropyleneglycol monoacetate as well as monomethyl, monoethyl, monopropyl, monobutyl and monophenyl ethers thereof, dioxane, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate and mixtures thereof.  
     
     
         5 . The method according to  claim 1 , wherein coating the surface occurs prior to  
       formation of a barrier layer on the surface.  
     
     
         6 . The method according to  claim 1 , wherein the dopant ions are selected from the  
       group consisting of arsenic, gallium, indium, phosphorous, boron, antimony and bismuth ions.  
     
     
         7 . The method according to  claim 1 , further comprising heating the surface  
       and removing an increased amount of dopant ions.  
     
     
         8 . The method according to  claim 1 , wherein the non-aqueous organic solvent  
       further comprises a soluble polymer and a soluble photosensitive compound.

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