BEOL decoupling capacitor

Abstract

An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits. good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

1 - 47  (Canceled)  
     
     
         48 . An integrated circuit (IC) semiconductor device comprising 
 a damascene structure, said damascene structure including alternating dielectric interlevels and wiring levels, wherein said outermost dielectric interlevel contains a trench therein;    a patterned decoupling capacitor formed in said trench, said patterned decoupling capacitor comprising a bottom electrode, an amorphous high dielectric constant thin film and an upper electrode; and    sidewall spacers on each side of the patterned decoupling capacitor.    
     
     
         49 . The IC semiconductor device of  claim 48  further comprising a metal fuse for separately connecting segments of said upper electrode to its voltage supply.  
     
     
         52 . The IC semiconductor device of  claim 48  wherein said amorphous high dielectric constant thin film is a perovskite-type oxide.  
     
     
         53 . The IC semiconductor device of  claim 52  wherein said perovskite-type oxide is a titanate-based dielectric, a manganate-based material, a cuprate-based material, a tungsten bronze-type material, or a bismuth layered material.