Electrically conducting ternary amorphous fully oxidized materials and their application

Abstract

Electrically active devices are formed using a special conducting material of the form Tm-Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

What is claimed is:  
     
         1 . A method of forming an electrically active material, comprising: 
 obtaining a silicon substrate;    forming a first material on said silicon substrate;    forming conductive layer on said first material, said conductive layer formed of a electrically conductive, fully oxidized, transition metal material combined with a SiO2 which is immiscible with said electrically conductive material, and a ferroelectric layer, over said conducting layer;    directly connecting said ferroelectric layer to said other material without a barrier layer therebetween; and    heating said device in high temperature environment between 300 and 700° C. and oxidizing environment without forming substantial oxidization in said material.    
     
     
         2 . A method as in  claim 1 , wherein said material is a dielectric material.  
     
     
         3 . A device as in  claim 1 , wherein said electrical material is formed by sputtering an oxygen containing gas at least one target containing distinct sites of Ruthenium and silicon.