Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method which are useful for removing a metal, organic materials such as a resist material and etching residues, particles, etc. adhering to the surface of a substrate, such as a semiconductor wafer. A substrate processing apparatus according to the present invention includes: a substrate holder for holding a substrate; a plurality of anodes and cathodes disposed opposite the substrate held by the substrate holder and arranged alternately along at least one direction; a processing liquid supply section for supplying a processing liquid between the substrate held by the substrate holder and the plurality of anodes and cathodes; and a power source for applying a voltage between the anodes and the cathodes.

What is claimed is:  
     
         1 . A substrate processing apparatus, comprising: 
 a substrate holder for holding a substrate;    a plurality of anodes and cathodes disposed opposite the substrate held by the substrate holder and arranged alternately along at least one direction;    a processing liquid supply section for supplying a processing liquid between the substrate held by the substrate holder and the plurality of anodes and cathodes; and    a power source for applying a voltage between the anodes and the cathodes.    
     
     
         2 . The substrate processing apparatus according to  claim 1 , further comprising: 
 a drive mechanism for bringing the anodes and the cathodes close to the substrate held by the substrate holder, and    a rotational drive mechanism for rotating the substrate held by the substrate holder.    
     
     
         3 . The substrate processing apparatus according to  claim 1 , wherein the processing liquid contains an electrolyte.  
     
     
         4 . The substrate processing apparatus according to  claim 1 , further comprising: 
 a rectifier for rectifying the waveform of an electric current to be applied between the anodes and the cathodes to at least one of an alternating current waveform, a direct current waveform, a direct current reverse voltage waveform, a pulse waveform, a PR pulse waveform, and a double pulse waveform.    
     
     
         5 . The substrate processing apparatus according to  claim 1 , wherein the anodes are arranged over a plane at regular intervals along orthogonal directions, and each cathode is disposed approximately in the center between two anodes adjacent to each other in an oblique direction.  
     
     
         6 . The substrate processing apparatus according to  claim 1 , wherein the cathodes are arranged over a plane at regular intervals along orthogonal directions, and each anode is disposed approximately in the center between two cathodes adjacent to each other in an oblique direction.  
     
     
         7 . The substrate processing apparatus according to  claim 1 , wherein at least one of the anodes and the cathodes are made of a conductive diamond or lead dioxide.  
     
     
         8 . The substrate processing apparatus according to  claim 1 , wherein the distance between the substrate held by the substrate holder and the anodes differs from the distance between the substrate held by the substrate holder and the cathodes.  
     
     
         9 . The substrate processing apparatus according to  claim 1 , wherein a supply port of the processing liquid supply section is provided in one of each anode and each cathode, and a suction port for sucking in the processing liquid supplied from the supply port is provided in the other one of each anode and each cathode.  
     
     
         10 . A substrate processing method, comprising: 
 bringing a plurality of anodes and cathodes close to a substrate;    supplying a processing liquid between the substrate and the plurality of anodes and cathodes; and    applying a voltage between the anodes and the cathodes.    
     
     
         11 . The substrate processing method according to  claim 10 , wherein the substrate is rotated while the voltage is applied between the anodes and the cathodes.  
     
     
         12 . The substrate processing method according to  claim 10 , wherein the processing liquid contains an electrolyte.  
     
     
         13 . The substrate processing method according to  claim 10 , wherein an electric current having at least one of an alternating current waveform, a direct current waveform, a direct current reverse voltage waveform, a pulse waveform, a PR pulse waveform, and a double pulse waveform, is applied between the anodes and the cathodes.  
     
     
         14 . The substrate processing method according to  claim 10 , wherein the distance between the substrate held by a substrate holder and the anodes differs from the distance between the substrate held by the substrate holder and the cathodes.  
     
     
         15 . The substrate processing method according to  claim 10 , wherein the processing liquid is supplied to the substrate from a supply port provided in one of each anode and each cathode, while the processing liquid supplied to the substrate is sucked from a suction port provided in the other one of each anode and each cathode.  
     
     
         16 . A substrate processing apparatus, comprising: 
 a substrate holder for holding a substrate;    a processing head disposed such that it faces the substrate held by the substrate holder; and    a processing liquid supply section for supplying a processing liquid between the substrate held by the substrate holder and the processing head;    wherein a plurality of anodes and cathodes, and an ultrasonic transducer for emitting ultrasonic waves toward the processing liquid are disposed in the substrate-facing surface of the processing head.    
     
     
         17 . The substrate processing apparatus according to  claim 16 , further comprising: 
 a relative movement mechanism for moving the processing head relative to the substrate.    
     
     
         18 . The substrate processing apparatus according to  claim 17 , wherein the relative movement mechanism rotates the processing head.  
     
     
         19 . The substrate processing apparatus according to  claim 16 , further comprising: 
 a pulse power source for applying a pulse voltage between the anodes and the cathodes.    
     
     
         20 . A substrate processing apparatus, comprising: 
 a processing liquid supply section for supplying a processing liquid onto a substrate;    a microbubble generator for generating microbubbles in the processing liquid; and    an ultrasonic transducer for emitting ultrasonic waves to the processing liquid containing microbubbles.    
     
     
         21 . The substrate processing apparatus according to  claim 20 , wherein the microbubbles have a diameter of not more than 20 μm, and have an internal pressure of not lower than atmospheric pressure.  
     
     
         22 . The substrate processing apparatus according to  claim 20 , wherein the microbubble generator comprises a two-fluid nozzle, a gas diffuser, a gas/liquid stirrer, or an electrolytic gas generator.  
     
     
         23 . The substrate processing apparatus according to  claim 20 , further comprising: 
 a substrate holder for holding a substrate; and    a rotating mechanism for rotating the substrate;    wherein the ultrasonic transducer is disposed such that it faces the substrate held by the substrate holder.    
     
     
         24 . The substrate processing apparatus according to  claim 23 , wherein the ultrasonic transducer has a processing liquid introduction port, and the processing liquid is supplied through the processing liquid introduction port to between the substrate held by the substrate holder and the ultrasonic transducer.  
     
     
         25 . The substrate processing apparatus according to  claim 20 , wherein the frequency of the ultrasonic waves emitted from the ultrasonic transducer is 5 to 100 MHz.  
     
     
         26 . A substrate processing apparatus, comprising: 
 a substrate holder for holding and rotating a substrate;    a rotatable rotary plate disposed opposite to one of the front and back surfaces of the substrate held by the substrate holder at a predetermined distance therefrom; and    a first fluid supply section for supplying a first fluid between the substrate held by the substrate holder and the rotary plate.    
     
     
         27 . The substrate processing apparatus according to  claim 26 , wherein the substrate holder and the rotary plate rotate in opposite directions.  
     
     
         28 . The substrate processing apparatus according to  claim 26 , wherein the first processing fluid is an etching liquid.  
     
     
         29 . The substrate processing apparatus according to  claim 26 , further comprising: 
 a counter plate disposed opposite to the other one of the front and back surfaces of the substrate held by the substrate holder at a predetermined distance therefrom, and    a second fluid supply section for supplying a second processing fluid between the substrate held by the substrate holder and the counter plate.    
     
     
         30 . The substrate processing apparatus according to  claim 29 , wherein the counter plate is rotatable.  
     
     
         31 . The substrate processing apparatus according to  claim 30 , wherein the counter plate rotates in a direction opposite to the rotating direction of the substrate holder.  
     
     
         32 . The substrate processing apparatus according to  claim 29 , wherein the second processing fluid is an etching liquid.  
     
     
         33 . The substrate processing apparatus according to  claim 29 , wherein the counter plate is rotatable.