Passivated magneto-resistive bit structure

Abstract

A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

We claim:  
     
         1 . A passivated magneto-resistive bit structure, comprising: 
 a magneto-resistive bit having a top surface and side walls;    a conductive etch stop barrier layer encapsulating the top surface and side walls of said bit; and    a metal contact provided upon at least part of said etch stop barrier layer.    
     
     
         2 . The bit structure of  claim 1 , wherein said etch stop barrier layer comprises CrSi.  
     
     
         3 . The bit structure of  claim 2 , wherein said etch stop barrier layer further comprises Ta.  
     
     
         4 . The bit structure of  claim 1 , wherein said etch stop barrier layer includes a diffusion barrier.  
     
     
         5 . The bit structure of  claim 1 , further comprising a diffusion barrier between said etch stop barrier layer and said bit.  
     
     
         6 . The bit structure of  claim 5 , wherein said diffusion barrier comprises a material selected from the group consisting of Ta and TaN.