Inventor · disambiguated record
William Larson
Also filed as: LARSON WILLIAM · LARSON WILLIAM L
25 granted patents·2 pending applications·886 citations·filing 1989–2012
97Inventor score
Files withMICRON TECHNOLOGY INC15RAMTRON INT CORP4CYPRESS SEMICONDUCTOR CORP2LARSON WILLIAM2RAMTRON CORP2
Top patents by PatentIndex Score
27 records- 0198US5005102AMultilayer electrodes for integrated circuit capacitorsRAMTRON CORP·Filed 1989·Granted Apr 2, 1991·198 cites·8 claims
- 0293US6424561B1MRAM architecture using offset bits for increased write selectivityMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 23, 2002·56 cites·7 claims
- 0392US6392922B1Passivated magneto-resistive bit structure and passivation method thereforMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·59 cites·6 claims
- 0492US5580814AMethod for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistorRAMTRON INT CORP·Filed 1995·Granted Dec 3, 1996·89 cites·21 claims
- 0591US5216572AStructure and method for increasing the dielectric constant of integrated ferroelectric capacitorsRAMTRON INT CORP·Filed 1992·Granted Jun 1, 1993·95 cites·21 claims
- 0691US5206788ASeries ferroelectric capacitor structure for monolithic integrated circuits and methodRAMTRON CORP·Filed 1991·Granted Apr 27, 1993·140 cites·30 claims
- 0787US6806546B2Passivated magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 19, 2004·30 cites·3 claims
- 0885US5495117AStacked ferroelectric memory cellRAMTRON INT CORP·Filed 1994·Granted Feb 27, 1996·53 cites·34 claims
- 0980US6717194B2Magneto-resistive bit structure and method of manufacture thereforMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 6, 2004·18 cites·20 claims
- 1077US5907784AMethod of making multi-layer gate structure with different stoichiometry silicide layersCYPRESS SEMICONDUCTOR·Filed 1997·Granted May 25, 1999·30 cites·19 claims
- 1177US5371699ANon-volatile ferroelectric memory with folded bit lines and method of making the sameRAMTRON INT CORP·Filed 1992·Granted Dec 6, 1994·40 cites·13 claims
- 1273US6522574B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 18, 2003·13 cites·11 claims
- 1371US5635765AMulti-layer gate structureCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Jun 3, 1997·23 cites·7 claims
- 1470US6424564B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·11 cites·13 claims
- 1567US6872997B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 29, 2005·8 cites·21 claims
- 1658US7029923B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 18, 2006·4 cites·21 claims
- 1757US6623987B2Passivated magneto-resistive bit structure and passivation method thereforMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 23, 2003·6 cites·16 claims
- 1854US9818742B2Semiconductor device isolation using an aligned diffusion and polysilicon field plateLARSON WILLIAM·Filed 2012·Granted Nov 14, 2017·1 cites·14 claims
- 1952US6791856B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 14, 2004·4 cites·18 claims
- 2048US6992918B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 31, 2006·3 cites·14 claims
- 2147US7169679B2Varactor with improved tuning rangeHONEYWELL INT INC·Filed 2002·Granted Jan 30, 2007·3 cites·9 claims
- 2237US8536659B2Semiconductor device with integrated channel stop and body contactLARSON WILLIAM·Filed 2009·Granted Sep 17, 2013·0 cites·8 claims
- 2335US7427514B2Passivated magneto-resistive bit structure and passivation method thereforMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 23, 2008·0 cites·11 claims
- 2435US6756240B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 29, 2004·0 cites·9 claims
- 2535US2007279971A1Modified pseudo-spin valve (psv) for memory applicationsMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 2635US2004227244A1Passivated magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 2734US5821623AMulti-layer gate structureCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Oct 13, 1998·2 cites·19 claims
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