Method of manufacturing semiconductor device

Abstract

Provided is a method of manufacturing a semiconductor device capable of effectively removing impurity product attached to a semiconductor film while suppressing coming off of, for example, hemispherical grains formed on a semiconductor film containing an impurity. Spherical or hemispherical grains are formed on the surface of an amorphous silicon film containing phosphorus which forms a bottom electrode of a capacitor. In order to suppress depletion of the bottom electrode, annealing is performed in PH 3 , atmosphere so as to diffuse phosphorus to the grains. Cleaning is performed using hot water (deionized water) in order to remove the impurity product attached onto the surface of the bottom electrode by annealing. A native oxide film formed on the surface of the bottom electrode is removed by cleaning using a mixed solution of hydrofluoric acid and water. A dielectric film and a top electrode are formed in order so as to cover the surface of the bottom electrode. Thereby, a cylindrical capacitor is fabricated.

1 - 9 . (Canceled)  
     
     
         10 . A method of manufacturing a semiconductor device comprising: 
 growing spherical or hemispherical grains on a semiconductor film;    diffusing an impurity product to the grains;    removing the impurity product from the semiconductor film using a first cleaner selected from the group consisting of: 1) hot water, 2) a mixed solution of water, hydrochloric acid and hydrogen peroxide, and 3) a mixed solution of sulfuric acid and hydrogen peroxide, wherein the mixed solution of water, hydrochloric acid and hydrogen peroxide has a ratio of 1:1:8; and    removing native oxide on the semiconductor film using a second cleaner.    
     
     
         11 . A method of manufacturing a semiconductor device comprising: 
 growing spherical or hemispherical grains on a semiconductor film;    diffusing an impurity product to the grains;    removing the impurity product from the semiconductor film using a first cleaner selected from the group consisting of: 1) hot water, 2) a mixed solution of water, hydrochloric acid and hydrogen peroxide, and 3) a mixed solution of sulfuric acid and hydrogen peroxide, wherein the mixed solution of sulfuric acid and hydrogen peroxide has a ratio of 1:5; and    removing native oxide on the semiconductor film using a second cleaner.