Method for forming patterns for semiconductor devices

Abstract

A method for forming an electrically conductive layer having predetermined patterns for semiconductor devices includes providing a substrate, forming an insulation layer having OH functional groups on the substrate, forming a patterned polymer layer on the insulation layer, etching the insulation layer to create a patterned insulation layer which has the same patterns as the patterned polymer layer, stripping the patterned polymer layer to expose the patterned insulation layer, treating the patterned insulation layer with a coupling agent which reacts with the OH functional groups, treating the patterned insulation layer with a catalyst-containing solution in which the catalyst reacts with the coupling agent, and depositing electrically conductive material on the patterned insulation layer which is catalytically active.

1 - 17  (Canceled).  
     
     
         18 . A semiconductor device, comprising: 
 a substrate;    a pattern insulating layer formed on the substrate, the patterned insulating layer having predetermined patterns; and    a plating layer formed on the patterned insulation layer, the plating insulation layer having electrically conductive patterns corresponding to the predetermined patterns of the patterned insulation layer, wherein the patterned insulation layer has catalytically active surfaces, and the electrically conductive patterns are formed by depositing electrically conductive material on the catalytically active surfaces of the patterned insulation layer.    
     
     
         19 . The semiconductor device of  claim 18 , wherein the surfaces of the patterned insulation layer are treated with a silane coupling agent and a catalyst-containing solution to become catalytically active.  
     
     
         20 . The semiconductor device of  claim 19 , wherein the silane coupling agent makes a bonding reaction with catalyst in the catalyst-containing solution and functional groups in the patterned insulation layer.  
     
     
         21 . The semiconductor device of  claim 20 , wherein the functional groups in the patterned insulation layer are OH functional groups, and the catalyst is selected from the group including palladium (Pd), platinum (Pt), tin (Sn), nickel (Ni), and any alloy thereof.  
     
     
         22 . (Canceled).  
     
     
         23 . A semiconductor device, comprising: 
 a patterned insulation layer formed on a non-functional layer on a substrate, wherein a top surface of the patterned insulation layer includes a catalytically active surface; and    an electrically conductive layer on the catalytically active surface.    
     
     
         24 . The semiconductor device of  claim 23 , wherein the catalytically active surface is formed by a bonding reaction including a silane coupling agent, a catalyst in a catalyst-containing solution and function groups in the patterned insulation layer.  
     
     
         25 . The semiconductor device of  claim 24 , wherein the functional groups in the patterned insulation layer are OH functional groups, and the catalyst is selected from the group consisting of palladium (Pd), platinum (Pt), tin (Sn), nickel (Ni), and any alloy thereof.  
     
     
         26 . The semiconductor device of  claim 23 , wherein the non-functional layer is silicon, silicon nitride, or a metal.  
     
     
         27 . A semiconductor device, comprising: 
 a patterned insulation layer formed on an insulation layer on a substrate, wherein an exposed surface of the patterned insulation layer includes a catalytically active surface thereon;    a signal wiring electrode on the catalytically active surface;    an oxide anode on a top portion of the signal wiring electrode and on portions of the insulation layer adjacent to the signal wiring electrode and the patterned insulation layer; and    a pixel wiring electrode on the insulation layer and the oxidized anode.    
     
     
         28 . The semiconductor device of  claim 27 , wherein the catalytically active surface is formed by a bonding reaction including a silane coupling agent, a catalyst in a catalyst-containing solution and function groups in the patterned insulation layer.  
     
     
         29 . The semiconductor device of  claim 28 , wherein the functional groups in the patterned insulation layer are OH functional groups, and the catalyst is selected from the group including palladium (Pd), platinum (Pt), tin (Sn), nickel (Ni), and any alloy thereof.