Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Abstract

Semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of applying the single-wafer processing to the wet etching of a silicon nitride film are provided. Each one wafer is held by wafer holding means and etching solution is supplied to a deposited film of the wafer by etching solution supply means. The supplied etching solution is irradiated with electromagnetic wave by electromagnetic wave heating means so as to heat the etching solution to a high temperature and then the deposited film is wet-etched at a high etching rate. The wet etching with the process time appropriate for the single-wafer processing can be achieved. The used etching solution is collected by recycle means and is reused in the subsequent etching after adjusting its concentration.

1 . A semiconductor manufacturing apparatus, comprising: 
 wafer holding means for holding a wafer on which a deposited film is formed;    etching solution supply means for supplying etching solution for etching said deposited film;    electromagnetic wave heating means for heating said etching solution by irradiating said solution with electromagnetic wave; and    silicon concentration adjusting means for said etching solution.    
   
   
       2 . The semiconductor manufacturing apparatus according to  claim 1  further comprising: preliminary heating means for heating said etching solution before the solution is supplied to said deposited film.  
   
   
       3 . The semiconductor manufacturing apparatus according to  claim 1 , 
 wherein said wafer holding means holds said wafer so that said deposited film faces upward, and    said etching solution supplied to said deposited film is kept on said deposited film by surface tension.    
   
   
       4 . The semiconductor manufacturing apparatus according to  claim 1 , 
 wherein said wafer holding means includes an immersion bath to be filled with said etching solution and holds each of said wafers to dip said deposited film in said etching solution.    
   
   
       5 . The semiconductor manufacturing apparatus according to  claim 1  further comprising: recycle means for used etching solution which has been used for the etching of said deposited film.  
   
   
       6 . The semiconductor manufacturing apparatus according to  claim 1  further comprising: recycle means for used etching solution which has been used for the etching of said deposited film, 
 wherein said recycle means has at least one of concentration adjusting means for chemicals composing etching solution for said etching solution and concentration adjusting means for reaction product produced by etching for said etching solution.    
   
   
       7 . The semiconductor manufacturing apparatus according to  claim 1  further comprising: recycle means for used etching solution which has been used for the etching of said deposited film, 
 wherein said recycle means has phosphoric acid concentration adjusting means for said etching solution and silicon concentration adjusting means for said etching solution.    
   
   
       8 . The semiconductor manufacturing apparatus according to  claim 1 , 
 wherein said electromagnetic wave is microwave.    
   
   
       9 . The semiconductor manufacturing apparatus according to  claim 1 , 
 wherein said electromagnetic wave is infrared.    
   
   
       10 . A manufacturing method of a semiconductor device, comprising the steps of: 
 supplying etching solution to a deposited film on a held wafer;    heating the etching solution supplied to the deposited film by irradiating the etching solution with electromagnetic wave; and    etching said deposited film by using said heated etching solution.    
   
   
       11 . The manufacturing method of a semiconductor device according to  claim 10 , 
 wherein said deposited film is a silicon nitride film, and    said etching solution is phosphoric acid solution.    
   
   
       12 . The manufacturing method of a semiconductor device according to  claim 10 , 
 wherein said deposited film is a silicon nitride film,    said etching solution is phosphoric acid solution, and    the etching of said deposited film is performed by using said etching solution heated to a range of 200° C. and 250° C.    
   
   
       13 . The manufacturing method of a semiconductor device according to  claim 10 , 
 wherein said deposited film is a silicon nitride film,    said etching solution is phosphoric acid solution containing silicon, and    said deposited film is etched selectively with respect to a silicon oxide film in contact with said deposited film by using said etching solution heated to a range of 200° C. and 250° C.