Plasma processing apparatus

Abstract

A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

1 . A plasma processing apparatus comprising: 
 a vacuum processing chamber for processing a sample, including an insulator film, by using plasma;    an outer chamber connected with an evacuation means;    a gas supplying unit for introducing into the vacuum processing chamber a fluorine-containing processing gas;    an upper electrode and a lower electrode or generating plasma therebetween and providing the vacuum processing chamber;    an electrode cover comprised of silicon being provided at the outer surface of the upper electrode; and    a discharge confining means comprised of silicon for surrounding the vacuum processing chamber.    
   
   
       2 . The plasma processing apparatus according to  claim 1;  the lower electrode having a sample mounting surface; said apparatus further comprising a susceptive cover comprised of silicon near the sample mounting surface.  
   
   
       3 . A plasma processing apparatus comprising: 
 a vacuum processing chamber for processing a sample, including an insulator film, by using plasma;    a gas supplying unit for introducing into the vacuum processing chamber a fluorine-containing processing gas;    an upper electrode and a lower electrode for providing the vacuum processing chamber therebetween;    a high frequency electric power source for supplying a high frequency energy for generating plasma between the upper electrode and the lower electrode;    a bias electric power source connected to the lower electrode to control energy of ions in the plasma;    an electrode cover comprised of silicon being provided at the outer surface of the upper electrode;    a susceptive cover comprised of silicon being provided near a sample mounting surface of the lower electrode; and    a discharge confining means comprised of silicon for surrounding the vacuum processing chamber;    wherein an inner surface of the vacuum processing chamber is substantially constituted by surfaces of silicon except for the sample mounting surface.    
   
   
       4 . The plasma processing apparatus according to  claim 3 , further comprising an outer chamber located outside of the vacuum processing chamber and connected with an evacuation means.  
   
   
       5 . The plasma processing apparatus according to  claim 3 , wherein the discharge confining means includes a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       6 . The plasma processing apparatus according to  claim 1 , wherein the discharge confining means is ring-shaped.  
   
   
       7 . The plasma processing apparatus according to  claim 2 , wherein the discharge confining means is ring-shaped.  
   
   
       8 . The plasma processing apparatus according to  claim 3 , wherein the discharge confining means is ring-shaped.  
   
   
       9 . The plasma processing apparatus according to  claim 1 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       10 . The plasma processing apparatus according to  claim 2 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.  
   
   
       11 . The plasma processing apparatus according to  claim 6 , wherein the discharge confining means is provided with at least a gap for evacuating the processing gas from the vacuum processing chamber to the outer chamber.