Nickel silicide - silicon nitride adhesion through surface passivation

Abstract

A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel silicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.

1 - 14 . (canceled)  
   
   
       15 . A semiconductor device, comprising 
 a. a substrate having a top surface that contains a silicon region;    b. a silicide region having a top surface, formed outwardly from the top surface of the silicon region;    c. a nitride region having a bottom surface, formed outwardly from the silicide region; and    d. an interface between the nitride bottom surface and the silicide top surface that is substantially free of a silicon rich material that is substantially devoid of nitrogen.    
   
   
       16 . A semiconductor device of  claim 15 , where in the silicide region contains nickel.  
   
   
       17 . A semiconductor device of  claim 15 , wherein the nitride region contains silicon.  
   
   
       18 . (canceled)