Apparatus for deposition of diamond like carbon

Abstract

Apparatus to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

1 - 21 . (canceled)  
   
   
       22 . A deposition system for coating Diamond-Like-Carbon on substrates comprising: 
 a. a chamber;    b. a vacuum system connected to said chamber;    c. an ion source positioned within said chamber;    d. a hydrocarbon-containing gas supply connected in the vicinity of said ion source;    e. a hydrocarbon beam creation power application element to which said ion source is responsive;    f. a substrate position element adjacent to said chamber;    g. a diamond-like-carbon coating element which is responsive to said ion source;    h. a carbon-reacting gas supply to which said ion source is responsive;    i. a reactive discharge creation power application element to which said ion source is responsive and which acts to create at least some carbon reaction product within said chamber; and    j. a carbon reaction product removal element connected to said chamber.    
   
   
       23 . A deposition system for coating Diamond-Like-Carbon on substrates as described in  claim 22  wherein said ion source alternatingly comprises a deposition-appropriate ion beam source and a carbon-reactive ion beam source.  
   
   
       24 . A deposition system for coating Diamond-Like-Carbon on substrates as described in  claim 22  wherein said ion source alternatingly comprises a current-proportional-to-voltage source and a current-independent-of-voltage source.  
   
   
       25 . A Diamond-Like-Carbon repetitive process system as described in  claim 23  wherein said hydrocarbon beam creation power application element comprises an arc avoidance element and wherein said reactive discharge creation power application element comprises an arc permission element.  
   
   
       26 . A Diamond-Like-Carbon repetitive process system as described in  claim 23  wherein said hydrocarbon beam creation power application element comprises a power application element selected from a group consisting of: 
 a power application element which applies a voltage of from about 100 volts to about 1000 volts,    a power application element which applies a current of from about 0.1 amperes to about 20 amperes,    a power application element which applies a voltage of from about 100 volts to about 1000 volts and a current of from about 0.1 amperes to about 20 amperes,    a power application element which applies a voltage of from about 100 volts to about 2000 volts,    a power application element which applies a voltage of from about 1000 volts to about 2000 volts,    a power application element which applies a current of from about 0.5 amperes per linear meter of ion source length to about 15 amperes per linear meter of ion source length and    wherein said reactive discharge creation power application element comprises a power application element selected from a group consisting of:    a power application element which applies a voltage of from about 100 volts to about 600 volts,    a power application element which applies a power level that is at least about twice the level of power applied to said hydrocarbon beam creation power application element,    a power application element which applies a power level that is at least about three times the level of power applied to said hydrocarbon beam creation power application element,    a power application element which applies a power level that is at least about four times the level of power applied to said hydrocarbon beam creation power application element,    a power application element which applies a power level that is at least several times the level of power applied to said hydrocarbon beam creation power application element,    a power application element which acts for a time short compared to the time during which said hydrocarbon beam creation power application element,    a power application element which applies a power level which ramps up,    a power application element which applies a power level which ramps up over a time period of from about 0.1 seconds to about 4 seconds, and    a power level which permits arcs to occur such arc supplying less than about 20 millijoules of energy during their occurrence.    
   
   
       27 . A Diamond-Like-Carbon repetitive process system as described in  claim 22  wherein said reactive discharge creation power application element comprises a maximum power element.  
   
   
       28 . A Diamond-Like-Carbon repetitive process system as described in  claim 22  and further comprising a timer element to which said ion source is responsive.  
   
   
       29 . A Diamond-Like-Carbon repetitive process system as described in  claim 28  wherein carbon-based material forms within said chamber at a varying rate and wherein said timer element causes action of said reactive discharge creation power application element before said varying rate substantially increases.  
   
   
       30 . A Diamond-Like-Carbon repetitive process system as described in  claim 28  wherein said timer element comprises an optimal processing throughput timer element.  
   
   
       31 . A Diamond-Like-Carbon repetitive process system as described in  claim 28  wherein said timer element sets a period so as to activate said reactive discharge creation power application element and to create at least some carbon reaction product within said chamber at times of processing selected from a group consisting of: 
 processing to achieve less than about 100 Å of Diamond-Like-Carbon,    processing to achieve less than about 500 Å of Diamond-Like-Carbon,    processing to achieve less than about 1,000 Å of Diamond-Like-Carbon,    processing to achieve less than about 5,000 Å of Diamond-Like-Carbon,    processing to achieve less than about 10,000 Å of Diamond-Like-Carbon,    processing to achieve coating of less than about 10 computer disks,    processing to achieve coating of less than about 20 computer disks,    processing to achieve coating of less than about 40 computer disks, and    processing to achieve coating of less than about 100 computer disks.    
   
   
       32 . A Diamond-Like-Carbon repetitive process system as described in  claim 28  wherein said timer element sets a period so as to activate said reactive discharge creation power application element for a duration selected from a group consisting of: 
 about 1 second,    about 2 seconds,    about 4 seconds,    about a processing time of said substrate, and    about a processing time of said substrate less a purge time of a gas environment.    
   
   
       33 . A Diamond-Like-Carbon repetitive process system as described in  claim 28  wherein said timer element sets a period so as to activate said reactive discharge creation power application element for a duration of about a processing time of a substrate less a purge time of a gas environment and wherein said repetitive process system further comprises a substrate discard element.  
   
   
       34 . A Diamond-Like-Carbon repetitive process system as described in  claim 22  and further comprising a substrate isolation element.  
   
   
       35 . A Diamond-Like-Carbon repetitive process system as described in  claim 22  wherein said ion source positioned within said chamber comprises a material processing ion beam source selected from a group consisting of: 
 a linear ion source,    a cold cathode ion source,    a non-hot electron emitter ion source,    a closed drift ion source,    a multi-cell cold cathode anode-layer closed drift ion source,    a linear cold cathode anode-layer closed drift ion source,    a single cell ion source,    an anode-layer ion source, and    an end-hall ion source.    
   
   
       36 . A Diamond-Like-Carbon repetitive process system as described in  claim 22  wherein said hydrocarbon-containing gas supply comprises a gas supply selected from a group consisting of: an acetylene gas supply, an ethylene gas supply, a propane gas supply, a butane gas supply, a pentane gas supply, a hexane gas supply, or combination thereof, and wherein said carbon-reacting gas supply comprises a gas supply selected from a group consisting of: 
 an oxygen gas supply,    oxygen and argon gas supply, and    a noble gas and a reactive gas supply.    
   
   
       37 . A Diamond-Like-Carbon repetitive process system as described in  claim 26  wherein said hydrocarbon-containing gas supply comprises a gas supply selected from a group consisting of: an acetylene gas supply, an ethylene gas supply, a propane gas supply, a butane gas supply, a pentane gas supply, a hexane gas supply, or combination thereof, and wherein said carbon-reacting gas supply comprises a gas supply selected from a group consisting of: 
 an oxygen gas supply,    oxygen and argon gas supply, and    a noble gas and a reactive gas supply.    
   
   
       38 - 60 . (canceled)  
   
   
       61 . A Diamond-Like-Carbon repetitive process system comprising: 
 a. a chamber;    b. a repetitive substrate feed element in the vicinity of said chamber;    c. an ion source positioned within said chamber;    d. a gas supply in the vicinity of said ion source;    e. a diamond-like-carbon coating element which is responsive to said ion source;    f. an affirmative avoidance element which affirmatively avoids the formation of carbon-based particles on said substrate within said chamber; and    g. a substrate removal element in the vicinity of said chamber.    
   
   
       62 . A Diamond-Like-Carbon repetitive process system as described in  claim 61  wherein said affirmative avoidance element which affirmatively avoids the formation of carbon-based particles within said chamber comprises an automatic operation element.  
   
   
       63 . A Diamond-Like-Carbon repetitive process system as described in  claim 62  wherein said automatic operation element comprises an automatic power supply operation element to which said ion source is responsive.  
   
   
       64 . A Diamond-Like-Carbon repetitive process system as described in  claim 62  wherein said automatic operation element comprises an automatic gas supply operation element to which said gas supply is responsive.  
   
   
       65 . A Diamond-Like-Carbon repetitive process system as described in  claim 63  wherein said automatic operation element further comprises an automatic gas supply operation element to which said gas supply is responsive.  
   
   
       66 . A Diamond-Like-Carbon repetitive process system as described in  claim 62  wherein said diamond-like-carbon coating element achieves repetitive processing selected from a group consisting of: 
 processing to achieve a cumulative amount of greater than about 500 Å of Diamond-Like-Carbon,    processing to achieve a cumulative amount of greater than about 1000 Å of Diamond-Like-Carbon,    processing to achieve a cumulative amount of greater than about 3,000 Å of Diamond-Like-Carbon,    processing to achieve a cumulative amount of greater than about 10,000 Å of Diamond-Like-Carbon,    processing to achieve coating of greater than about 20 computer disks,    processing to achieve coating of greater than about 40 computer disks, and    processing to achieve coating of greater than about 100 computer disks.    
   
   
       67 . A Diamond-Like-Carbon repetitive process system comprising: 
 a. a chamber;    b. a repetitive substrate feed element in the vicinity of said chamber;    c. a Diamond-Like-Carbon process system comprising: 
 i. an ion source positioned within said chamber;  
 ii. a hydrocarbon-containing gas supply to which said ion source is responsive; and  
 iii. a diamond-like-carbon coating element which is responsive to said ion source;  
   d. an automatic interruption element to which said Diamond-Like-Carbon process system is responsive;    e. an automatic carbon-based material elimination element connected to said chamber; and    f. an automatic restart element to which said Diamond-Like-Carbon process system is responsive.    
   
   
       68 . A Diamond-Like-Carbon repetitive process system as described in  claim 67  wherein said Diamond-Like-Carbon process system comprises a deposition system as described in  claim 22 .  
   
   
       69 . A Diamond-Like-Carbon repetitive process system as described in  claim 67  wherein said Diamond-Like-Carbon process system further comprises a beam creation power application element to which said ion source is responsive.  
   
   
       70 . A Diamond-Like-Carbon repetitive process system as described in  claim 69  wherein said automatic interruption element to which said Diamond-Like-Carbon process system is responsive comprises: 
 a. an automatic power supply operation element to which said beam creation power application element is responsive; and    b. an automatic gas supply operation element to which said hydrocarbon-containing gas supply is responsive.    
   
   
       71 . A Diamond-Like-Carbon repetitive process system as described in  claim 69  and further comprising a gas purge element connected to said chamber.  
   
   
       72 . A Diamond-Like-Carbon repetitive process system as described in  claim 69  and further comprising a substrate removal element in the vicinity of said chamber.  
   
   
       73 . A Diamond-Like-Carbon repetitive process system as described in  claim 72  wherein said repetitive substrate feed element in the vicinity of said chamber comprises: 
 a. a desired substrate feed; and    b. a desired substrate avoidance element.    
   
   
       74 . A Diamond-Like-Carbon repetitive process system as described in  claim 67  wherein said automatic elimination element connected to said chamber comprises: 
 a. a reactive gas supply to which said ion source is responsive and which causes the formation of at least some carbon reaction product; and    b. a carbon reaction product gas purge element connected to said chamber.    
   
   
       75 . A Diamond-Like-Carbon repetitive process system as described in  claim 69  wherein said automatic elimination element connected to said chamber comprises a second beam creation power application element to which said ion source is responsive.  
   
   
       76 . A Diamond-Like-Carbon repetitive process system as described in  claim 67  wherein said automatic elimination element connected to said chamber comprises an arc permission element.  
   
   
       77 . A Diamond-Like-Carbon repetitive process system as described in  claim 76  wherein said automatic elimination element connected to said chamber further comprises a maximum power element.  
   
   
       78 . A Diamond-Like-Carbon repetitive process system as described in  claim 67  wherein said automatic elimination element connected to said chamber comprises a timer element.  
   
   
       79 . A Diamond-Like-Carbon repetitive process system as described in  claim 78  wherein said timer element comprises an optimal processing throughput timer element.  
   
   
       80 . A Diamond-Like-Carbon repetitive process system as described in  claim 78  wherein said timer element sets a period so as to activate said automatic interruption element at processing times selected from a group consisting of: 
 processing to achieve less than about 100 Å of Diamond-Like-Carbon,    processing to achieve less than about 500 Å of Diamond-Like-Carbon,    processing to achieve less than about 1,000 Å of Diamond-Like-Carbon,    processing to achieve less than about 5,000 Å of Diamond-Like-Carbon,    processing to achieve less than about 10,000 Å of Diamond-Like-Carbon,    processing to achieve coating of less than about 10 computer disks,    processing to achieve coating of less than about 20 computer disks,    processing to achieve coating of less than about 40 computer disks, and    processing to achieve coating of less than about 100 computer disks.    
   
   
       81 . A Diamond-Like-Carbon repetitive process system as described in  claim 78  wherein said timer element sets a period so as to accomplish elimination for a duration selected from a group consisting of: 
 about 1 second,    about 2 seconds,    about 4 seconds,    about a processing time of said substrate, and    about a processing time of said substrate less a purge time of a gas environment.    
   
   
       82 . A Diamond-Like-Carbon repetitive process system as described in  claim 78  wherein said timer element sets a period so as to accomplish elimination for a duration of about a processing time of a substrate less a purge time of a gas environment and further comprising a discardable substrate positioned responsive to said repetitive substrate feed element.  
   
   
       83 - 94 . (canceled)  
   
   
       95 . A material processing ion beam system comprising; 
 a. a chamber;    b. a vacuum system connected to said chamber;    c. a low impedance discharge mode material processing ion source positioned within said chamber;    d. a gas supply in the vicinity of said low impedance discharge mode material processing ion source;    e. a beam creation power application element to which said low impedance discharge mode material processing ion source is responsive.    
   
   
       96 . A material processing ion beam system as described in  claim 95  wherein said beam creation power application element to which said low impedance discharge mode material processing ion source is responsive comprises a power supply which applies from about 100 volts to about 600 volts to said material processing ion beam source.  
   
   
       97 . A material processing ion beam system as described in  claim 95  wherein said beam creation power application element to which said low impedance discharge mode material processing ion source is responsive comprises a high impedance current source.  
   
   
       98 . A material processing ion beam system as described in  claim 97  wherein said gas supply in the vicinity of said low impedance discharge mode material processing ion source comprises a low impedance discharge mode material processing ion flux gas supply.  
   
   
       99 . A material processing ion beam system as described in  claim 95  wherein said low impedance discharge mode material processing ion source positioned within said chamber comprises a Diamond-Like-Carbon configured ion source.  
   
   
       100 . A material processing ion beam system as described in  claim 95  wherein said low impedance discharge mode material processing ion source positioned within said chamber comprises a material processing ion beam source selected from a group consisting of: 
 a linear ion source, and    a single-cell anode-layer ion source.    
   
   
       101 . A material processing ion beam system as described in  claim 95  wherein said low impedance discharge mode material processing ion source positioned within said chamber comprises a material processing ion beam source selected from a group consisting of: 
 a cold cathode ion source,    a non-hot electron emitter ion source,    a closed drift ion source,    a multi-cell cold cathode anode-layer closed drift ion source,    a linear cold cathode anode-layer closed drift ion source,    a single cell ion source,    an anode-layer ion source, and    an end-hall ion source.    
   
   
       102 . A material processing ion beam system as described in  claim 95  wherein said gas supply in the vicinity of said low impedance discharge mode material processing ion source comprises a reactive gas supply.  
   
   
       103 . A material processing ion beam system as described in  claim 102  wherein said a reactive gas supply comprises a gas supply selected from a group consisting of: 
 an oxygen gas supply,    an oxygen and argon gas supply, and    a noble gas and a reactive gas supply.    
   
   
       104 . A material processing ion beam system as described in  claim 103  and further comprising at least one carbon-containing surface positioned within said chamber.  
   
   
       105 . A material processing ion beam system as described in  claim 104  wherein said low impedance discharge mode material processing ion source positioned within said chamber comprises a Diamond-Like-Carbon configured ion source.  
   
   
       106 - 117 . (canceled)