CVD apparatuses and methods of forming a layer over a semiconductor substrate

Abstract

The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

1 - 32 . (canceled)  
   
   
       33 . A deposition apparatus comprising: 
 a substrate platform within a deposition chamber, the substrate platform having an upper surface;    a reaction gas inlet into the chamber having a first opening disposed at a first distance from the upper surface of the platform, the reaction gas inlet passing through a first chamber surface opposing the upper surface of the platform;    an inert gas inlet passing through the first chamber surface, the inert gas inlet having a second opening disposed at a second distance from the: upper surface, the second distance being greater than the first distance; and    a chamber outlet passing through a second chamber surface, the second chamber surface opposing the first chamber surface.    
   
   
       34 . The apparatus of  claim 33  wherein the reaction gas inlet is comprised by a valve assembly.  
   
   
       35 . The apparatus of  claim 33  further comprising a distribution head disposed between the upper surface and the inert gas inlet.  
   
   
       36 . The apparatus of  claim 33  wherein the distribution head is disposed at a third distance between the first distance and the second distance.  
   
   
       37 . The apparatus of  claim 33  wherein the outlet position opposing the reaction gas inlet maintains directional flow of reaction gas away from the first surface.  
   
   
       38 . The apparatus of  claim 33  wherein the reaction gas inlet is a first reaction gas inlet and further comprising a second reaction gas inlet into the chamber.  
   
   
       39 . The apparatus of  claim 38  wherein the second reaction gas inlet passes through the first chamber surface.  
   
   
       40 . The apparatus of  claim 38  wherein the second reaction gas inlet comprises a third opening disposed at a third distance from the upper surface of the platform.  
   
   
       41 . The apparatus of  claim 40  further comprising a distribution head disposed at a position between the third opening and the second opening.  
   
   
       42 . A method of depositing a layer over a substrate, the method comprising; 
 providing a substrate on an upper surface of a platform disposed within a deposition chamber;    introducing a reaction gas through an inlet passing through a first chamber surface, the first chamber surface opposing the upper surface of the platform;    directionally-flowing the reaction gas away from the first surface toward a chamber outlet passing through a second chamber surface, at least some of the reaction gas depositing onto the substrate during the directional flowing.    
   
   
       43 . The method of  claim 42  wherein the second chamber surface opposes the first chamber surface.  
   
   
       44 . The method of  claim 42  wherein the inlet is a first inlet, and further comprising providing an inert gas into the chamber through a second inlet.  
   
   
       45 . The method of  claim 44  wherein the second inlet passes through the first chamber surface.  
   
   
       46 . The method of  claim 44  wherein the second inlet comprises an opening, the method further comprising flowing the inert gas through a dispersion head disposed between the opening and the upper surface of the platform.  
   
   
       47 . The method of  claim 44  wherein the inert gas is provided simultaneously with the reaction gas.  
   
   
       48 . The method of  claim 42  wherein the reaction gas is a first reaction gas, and further comprising flowing a second reaction gas into the chamber.  
   
   
       49 . The method of  claim 48  wherein the second reaction gas is provided through the inlet.  
   
   
       50 . The method of  claim 48  wherein the inlet is a first inlet and wherein the second reaction gas is provided through a second inlet.  
   
   
       51 . The method of  claim 50  wherein the second inlet passes through the first chamber surface.  
   
   
       52 . The method of  claim 51  further comprising directionally-flowing the second reaction gas away from the first surface toward the chamber outlet, and wherein the second chamber surface opposes the first chamber surface.