Inventor · disambiguated record
Philip Campbell
Also filed as: CAMPBELL PHILIP H
32 granted patents·13 pending applications·1,186 citations·filing 2000–2006
98Inventor score
Top patents by PatentIndex Score
45 records- 0198US6461436B1Apparatus and process of improving atomic layer deposition chamber performanceMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·579 cites·33 claims
- 0296US6845734B2Deposition apparatuses configured for utilizing phased microwave radiationMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 25, 2005·59 cites·19 claims
- 0395US6412437B1Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition processMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 2, 2002·54 cites·28 claims
- 0492US6814813B2Chemical vapor deposition apparatusMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 9, 2004·45 cites·15 claims
- 0592US6677250B2CVD apparatuses and methods of forming a layer over a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 13, 2004·56 cites·19 claims
- 0692US6468925B2Plasma enhanced chemical vapor deposition processMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 22, 2002·44 cites·11 claims
- 0790US6758911B2Apparatus and process of improving atomic layer deposition chamber performanceMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 6, 2004·32 cites·13 claims
- 0890US6613587B1Method of replacing at least a portion of a semiconductor substrate deposition chamber linerMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 2, 2003·33 cites·28 claims
- 0988US7229666B2Chemical vapor deposition methodMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 12, 2007·34 cites·19 claims
- 1087US7422986B2Deposition methods utilizing microwave excitationMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 9, 2008·5 cites·9 claims
- 1187US6858264B2Chemical vapor deposition methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 22, 2005·28 cites·58 claims
- 1286US6716284B2Apparatus and process of improving atomic layer deposition chamber performanceMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·24 cites·25 claims
- 1385US7185601B2Chemically sensitive warning apparatus and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 6, 2007·27 cites·32 claims
- 1485US6800172B2Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processorMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 5, 2004·30 cites·68 claims
- 1581US7311947B2Laser assisted material depositionMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 25, 2007·19 cites·13 claims
- 1676US7468104B2Chemical vapor deposition apparatus and deposition methodMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 23, 2008·15 cites·5 claims
- 1775US7044997B2Process byproduct trap, methods of use, and system including sameMICRON TECHNOLOGY INC·Filed 2003·Granted May 16, 2006·16 cites·139 claims
- 1875US6734051B2Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substratesMICRON TECHNOLOGY INC·Filed 2003·Granted May 11, 2004·11 cites·22 claims
- 1972US7270715B2Chemical vapor deposition apparatusMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 18, 2007·9 cites·39 claims
- 2072US7234412B2Semiconductor substrate deposition processor chamber liner apparatusMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 26, 2007·9 cites·7 claims
- 2172US6586285B1Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layersMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 1, 2003·9 cites·17 claims
- 2270US7329292B2Process byproduct trap and system including sameMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 12, 2008·3 cites·22 claims
- 2370US6620253B1Engagement mechanism for semiconductor substrate deposition process kit hardwareMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 16, 2003·20 cites·39 claims
- 2469US6787373B2Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substratesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 7, 2004·7 cites·17 claims
- 2566US7393563B2Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layersMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 1, 2008·1 cites·27 claims
- 2659US7105208B2Methods and processes utilizing microwave excitationMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 12, 2006·2 cites·43 claims
- 2759US7033642B2Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layerMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 25, 2006·4 cites·39 claims
- 2858US6767823B2Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layersMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 27, 2004·4 cites·29 claims
- 2958US2006251815A1Atomic layer deposition methodsHAMER KEVIN T·Filed 2006·Application pending·0 cites
- 3057US6849133B2CVD apparatuses and methods of forming a layer over a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 1, 2005·4 cites·12 claims
- 3157US2006065635A1Deposition chamber surface enhancement and resulting deposition chambersDERDERIAN GARO J·Filed 2005·Application pending·0 cites
- 3256US2005142291A1Chemical vapor deposition methodsFiled 2005·Application pending·0 cites
- 3354US7396570B2Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layersMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 8, 2008·0 cites·30 claims
- 3453US7192487B2Semiconductor substrate processing chamber and accessory attachment interfacial structureMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·3 cites·40 claims
- 3552US2006289969A1Laser assisted material depositionMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3652US2006288937A1Laser assisted material depositionMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3749US2006027326A1Semiconductor substrate processing chamber and substrate transfer chamber interfacial structureMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 3849US2004237895A1Magnetically-actuatable throttle valveMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 3948US2006019029A1Atomic layer deposition methods and apparatusHAMER KEVIN T·Filed 2004·Application pending·0 cites
- 4047US2005241581A1Chemical vapor deposition apparatuses and deposition methodsCARPENTER CRAIG M·Filed 2005·Application pending·0 cites
- 4144US2004134427A1Deposition chamber surface enhancement and resulting deposition chambersFiled 2003·Application pending·0 cites
- 4244US2005112890A1CVD apparatuses and methods of forming a layer over a semiconductor substrateFiled 2004·Application pending·0 cites
- 4342US6730355B2Chemical vapor deposition method of forming a material over at least two substratesMICRON TECHNOLOGY INC·Filed 2002·Granted May 4, 2004·0 cites·60 claims
- 4440US2003221616A1Magnetically-actuatable throttle valveMICRON TECHNOLOGY INC·Filed 2002·Application pending·0 cites
- 4538US2002129768A1Chemical vapor deposition apparatuses and deposition methodsFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →