US2006027326A1PendingUtilityA1

Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure

49
Assignee: MICRON TECHNOLOGY INCPriority: Feb 22, 2002Filed: Aug 22, 2005Published: Feb 9, 2006
Est. expiryFeb 22, 2022(expired)· nominal 20-yr term from priority
H10P 72/0441C23C 16/54C23C 16/4409Y10S414/139
49
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

Claims

exact text as granted — not AI-modified
1 - 109 . (canceled)  
   
   
       110 . A semiconductor substrate processing chamber and substrate transfer chamber interfacial structure, comprising: 
 a body sized and shaped to engage with and between a semiconductor substrate processing chamber and a substrate transfer chamber, the body comprising a mass of substantially non-metallic and thermally insulative material;    the body comprising a substrate passageway extending through the thermally insulative material;    the body comprising a plurality of openings spaced from the passageway and which extend through the thermally insulative material; and    load bearing plugs received within at least some of the openings in the thermally insulative material, the load bearing plugs having greater compression strength than the thermally insulative material, at least some of the load bearing plugs having outer longitudinal surfaces which are not threaded.    
   
   
       111 . The interfacial structure of  claim 110  wherein said load bearing plugs having outer longitudinal surfaces which are not threaded comprise a longitudinal passageway received therethrough.  
   
   
       112 . The interfacial structure of  claim 110  wherein the body is substantially rectangular having outermost corners, at least four of said openings and load bearing plugs being respectively received proximate the outermost corners.  
   
   
       113 . The interfacial structure of  claim 110  wherein the body comprises a substantially metallic insert received within the passageway, the insert defining an insert substrate passageway therethrough.  
   
   
       114 . A semiconductor substrate processor comprising a semiconductor substrate transfer chamber and a plurality of semiconductor substrate processing chambers connected therewith, an interfacial structure of  claim 110  being received between said transfer chamber and at least one of said processing chambers.  
   
   
       115 . A semiconductor substrate processing chamber and substrate transfer chamber interfacial structure, comprising: 
 a body sized and shaped to engage with and between a semiconductor substrate processing chamber and a substrate transfer chamber, the body comprising a mass of substantially non-metallic and thermally insulative material;    the body comprising a substrate passageway extending through the thermally insulative material;    the body comprising a plurality of openings spaced from the passageway and which extend through the thermally insulative material; and    load bearing plugs received within at least some of the openings in the thermally insulative material, the load bearing plugs having greater compression strength than the thermally insulative material, at least some of the load bearing plugs having some outer longitudinal surface portion which is straight linear along a length of said load bearing plugs.    
   
   
       116 . The interfacial structure of  claim 115  wherein said load bearing plugs having some outer longitudinal surface portion which is straight linear along a length of said load bearing plugs comprise a longitudinal passageway received therethrough.  
   
   
       117 . The interfacial structure of  claim 115  wherein the body is substantially rectangular having outermost corners, at least four of said openings and load bearing plugs being respectively received proximate the outermost corners.  
   
   
       118 . The interfacial structure of  claim 115  wherein the body comprises a substantially metallic insert received within the passageway, the insert defining an insert substrate passageway therethrough.  
   
   
       119 . A semiconductor substrate processor comprising a semiconductor substrate transfer chamber and a plurality of semiconductor substrate processing chambers connected therewith, an interfacial structure of  claim 115  being received between said transfer chamber and at least one of said processing chambers.  
   
   
       120 . A semiconductor substrate processing chamber and substrate transfer chamber interfacial structure, comprising: 
 a body sized and shaped to engage with and between a semiconductor substrate processing chamber and a substrate transfer chamber, the body comprising a mass of substantially non-metallic and thermally insulative material;    the body comprising a substrate passageway extending through the thermally insulative material;    the body comprising a plurality of openings spaced from the passageway and which extend through the thermally insulative material; and    load bearing plugs received within at least some of the openings in the thermally insulative material, the load bearing plugs having greater compression strength than the thermally insulative material, at least some of the load bearing plugs having at least one radial projection, the body comprising interlocking openings sized to receive said radial projections effective to preclude rotation of said load bearing plugs having the radial projection.    
   
   
       121 . The interfacial structure of  claim 120  wherein said load bearing plugs having the radial projection comprise a longitudinal passageway received therethrough.  
   
   
       122 . The interfacial structure of  claim 120  wherein the body is substantially rectangular having outermost corners, at least four of said openings and load bearing plugs being respectively received proximate the outermost corners.  
   
   
       123 . The interfacial structure of  claim 120  wherein the body comprises a substantially metallic insert received within the passageway, the insert defining an insert substrate passageway therethrough.  
   
   
       124 . A semiconductor substrate processor comprising a semiconductor substrate transfer chamber and a plurality of semiconductor substrate processing chambers connected therewith, an interfacial structure of  claim 120  being received between said transfer chamber and at least one of said processing chambers.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.