Apparatus for the generation and supply of fluorine gas
Abstract
To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62 . A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36 , substitute gas is supplied from the cylinder 62 to the gas utilization section.
Claims
exact text as granted — not AI-modified1 - 10 . (canceled)
11 . An apparatus which may be used to generate and supply fluorine gas to a semiconductor processing system, said apparatus comprising:
a) a fluorine gas generating means comprising:
1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising:
i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;
b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of:
1) nitrogen fluoride;
2) sulfur fluoride; and
3) chlorine fluoride;
c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either:
1) said fluorine gas; or
2) said substitute gas from said gas storage means;
d) an electrolytic cell detector, wherein said detector detects the state of said cell; and e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.
12 . The apparatus of claim 11 , wherein said detector measures the operating condition of said bath.
13 . The apparatus of claim 12 , wherein said detector detects a parameter representative of said condition, said parameter comprising at least one member selected from the group consisting of:
a) electrical current characteristics; b) liquid level; and c) temperature.
14 . The apparatus of claim 11 , further comprising a path detector, wherein said path detector detects an abnormal state in the gas supply path from said cell to said semiconductor processing system.
15 . The apparatus of claim 14 , wherein upon detection of an abnormal parameter by either said cell detector or said path detector, said controller feeds said substitute gas to said semiconductor processing system.
16 . An apparatus which may be used to generate and supply fluorine gas to a semiconductor processing system, said apparatus comprising:
a) a fluorine gas generating means comprising:
1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising:
i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;
b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of:
1) nitrogen fluoride;
2) sulfur fluoride; and
3) chlorine fluoride;
c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either:
1) said fluorine gas; or
2) said substitute gas from said gas storage means;
d) a path detector wherein said detector detects the state in the gas supply path of said fluorine gas from said cell to said semiconductor processing system; and e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.
17 . The apparatus of claim 16 , further comprising:
a) a buffer section on said gas supply path, wherein said buffer section controls the pressure and flow rate of said fluorine gas produced from said cell; and b) a buffer detector, wherein said buffer detector:
1) is situated with said path detector; and
2) is able to detect the status of said buffer section.
18 . The apparatus of claim 17 , further comprising a compressor situated with said buffer section, wherein:
a) said compressor pressurizes said fluorine gas from said cell; and b) said buffer detector detects the operational status of said compressor.
19 . The apparatus of claim 17 , further comprising a buffer tank situated in said buffer section, wherein:
a) said buffer tank temporarily stores said fluorine gas from said cell; and b) said buffer detector detects the pressure in said tank.
20 . The apparatus of claim 17 , further comprising a flow controller situated in said buffer section, wherein:
a) said flow controller supplies fluorine gas to said switching section at a specified flow rate; and b) said buffer detector detects the flow rate of said fluorine gas at said flow controller.
21 . The apparatus of claim 11 , wherein said substitute gas comprises chlorine fluoride.
22 . The apparatus of claim 16 , wherein said substitute gas comprises chlorine fluoride.
23 . A method for fluorine gas generation and supply to a semiconductor processing system comprising generating and supplying said fluorine with an apparatus, said apparatus further comprising:
a) a fluorine gas generating means comprising:
1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising:
i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;
b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of:
1) nitrogen fluoride;
2) sulfur fluoride; and
3) chlorine fluoride;
c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either:
1) said fluorine gas from said cell; or
2) said substitute gas from said gas storage means;
d) a detector comprising at least one member selected from the group consisting of:
1) an electrolytic cell detector that detects the status of said cell; and
2) a path detector that detects the status of said gas supply path; and
e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.
24 . The method of claim 22 , wherein said substitute gas comprises chlorine fluoride.Join the waitlist — get patent alerts
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