US2005161321A1PendingUtilityA1

Apparatus for the generation and supply of fluorine gas

Priority: Dec 27, 2001Filed: Dec 20, 2002Published: Jul 28, 2005
Est. expiryDec 27, 2021(expired)· nominal 20-yr term from priority
C25B 1/245C23C 16/4405C25B 15/02C25B 15/00
41
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Claims

Abstract

To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62 . A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36 , substitute gas is supplied from the cylinder 62 to the gas utilization section.

Claims

exact text as granted — not AI-modified
1 - 10 . (canceled)  
     
     
         11 . An apparatus which may be used to generate and supply fluorine gas to a semiconductor processing system, said apparatus comprising: 
 a) a fluorine gas generating means comprising: 
 1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising: 
 i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;  
 
   b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of: 
 1) nitrogen fluoride;  
 2) sulfur fluoride; and  
 3) chlorine fluoride;  
   c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either: 
 1) said fluorine gas; or  
 2) said substitute gas from said gas storage means;  
   d) an electrolytic cell detector, wherein said detector detects the state of said cell; and    e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.    
     
     
         12 . The apparatus of  claim 11 , wherein said detector measures the operating condition of said bath.  
     
     
         13 . The apparatus of  claim 12 , wherein said detector detects a parameter representative of said condition, said parameter comprising at least one member selected from the group consisting of: 
 a) electrical current characteristics;    b) liquid level; and    c) temperature.    
     
     
         14 . The apparatus of  claim 11 , further comprising a path detector, wherein said path detector detects an abnormal state in the gas supply path from said cell to said semiconductor processing system.  
     
     
         15 . The apparatus of  claim 14 , wherein upon detection of an abnormal parameter by either said cell detector or said path detector, said controller feeds said substitute gas to said semiconductor processing system.  
     
     
         16 . An apparatus which may be used to generate and supply fluorine gas to a semiconductor processing system, said apparatus comprising: 
 a) a fluorine gas generating means comprising: 
 1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising: 
 i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;  
 
   b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of: 
 1) nitrogen fluoride;  
 2) sulfur fluoride; and  
 3) chlorine fluoride;  
   c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either: 
 1) said fluorine gas; or  
 2) said substitute gas from said gas storage means;  
   d) a path detector wherein said detector detects the state in the gas supply path of said fluorine gas from said cell to said semiconductor processing system; and    e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.    
     
     
         17 . The apparatus of  claim 16 , further comprising: 
 a) a buffer section on said gas supply path, wherein said buffer section controls the pressure and flow rate of said fluorine gas produced from said cell; and    b) a buffer detector, wherein said buffer detector: 
 1) is situated with said path detector; and  
 2) is able to detect the status of said buffer section.  
   
     
     
         18 . The apparatus of  claim 17 , further comprising a compressor situated with said buffer section, wherein: 
 a) said compressor pressurizes said fluorine gas from said cell; and    b) said buffer detector detects the operational status of said compressor.    
     
     
         19 . The apparatus of  claim 17 , further comprising a buffer tank situated in said buffer section, wherein: 
 a) said buffer tank temporarily stores said fluorine gas from said cell; and    b) said buffer detector detects the pressure in said tank.    
     
     
         20 . The apparatus of  claim 17 , further comprising a flow controller situated in said buffer section, wherein: 
 a) said flow controller supplies fluorine gas to said switching section at a specified flow rate; and    b) said buffer detector detects the flow rate of said fluorine gas at said flow controller.    
     
     
         21 . The apparatus of  claim 11 , wherein said substitute gas comprises chlorine fluoride.  
     
     
         22 . The apparatus of  claim 16 , wherein said substitute gas comprises chlorine fluoride.  
     
     
         23 . A method for fluorine gas generation and supply to a semiconductor processing system comprising generating and supplying said fluorine with an apparatus, said apparatus further comprising: 
 a) a fluorine gas generating means comprising: 
 1) an electrolytic cell for the electrolysis of hydrogen fluoride to produce said fluorine gas, said cell further comprising: 
 i) an electrolytic bath, said bath further comprising hydrogen fluoride-containing molten salt;  
 
   b) a gas storage means comprising a substitute gas, said substitute gas comprising at least one member selected from the group consisting of: 
 1) nitrogen fluoride;  
 2) sulfur fluoride; and  
 3) chlorine fluoride;  
   c) a gas switching section connected to said electrolytic cell and said gas storage means wherein said switching section selectively supplies said semiconductor processing system with either: 
 1) said fluorine gas from said cell; or  
 2) said substitute gas from said gas storage means;  
   d) a detector comprising at least one member selected from the group consisting of: 
 1) an electrolytic cell detector that detects the status of said cell; and  
 2) a path detector that detects the status of said gas supply path; and  
   e) a controller, wherein said controller acts on said switching section to feed said substitute gas to said semiconductor processing system.    
     
     
         24 . The method of  claim 22 , wherein said substitute gas comprises chlorine fluoride.

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