Bulk GaN and AlGaN single crystals

Abstract

Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.

1 . A GaN single crystal exceeding a volume of 4 cubic centimeters, wherein an x, a y, and a z dimension of said GaN single crystal each exceed 1 centimeter.  
     
     
         2 . The GaN single crystal of  claim 1 , wherein said GaN single crystal exceeds a volume of 10 cubic centimeters.  
     
     
         3 . The GaN single crystal of  claim 1 , wherein said GaN single crystal exceeds a volume of 20 cubic centimeters.  
     
     
         4 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a diameter of at least 5 centimeters.  
     
     
         5 . The GaN single crystal of  claim 1 , wherein a full width at half maximum (FWHM) of an x-ray rocking curve for said GaN single crystal is within a range of 60 to 360 arc seconds.  
     
     
         6 . The GaN single crystal of  claim 1 , wherein a full width at half maximum (FWHM) of an x-ray rocking curve for said GaN single crystal is less than 360 arc seconds.  
     
     
         7 . The GaN single crystal of  claim 1 , wherein a full width at half maximum (FWHM) of an x-ray rocking curve for said GaN single crystal is less than 90 arc seconds.  
     
     
         8 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a dislocation density in the range of 10 to 100,000 cm −2 .  
     
     
         9 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a dislocation density in the range of 10 to 10,000 cm −2 .  
     
     
         10 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a dislocation density in the range of 10 to 1,000 cm −2 .  
     
     
         11 . The GaN single crystal of  claim 1 , wherein said GaN single crystal includes at least one dopant.  
     
     
         12 . The GaN single crystal of  claim 11 , wherein said at least one dopant is selected from the group of dopants consisting of oxygen (O), silicon (Si), germanium (Ge), tin (Sn), magnesium (Mg), zinc (Zn), iron (Fe), chromium (Cr), indium (In), carbon (C) and boron (B).  
     
     
         13 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a cylindrical shape after processing.  
     
     
         14 . The GaN single crystal of  claim 1 , wherein a surface of said GaN single crystal has a (0001) crystallographic surface orientation.  
     
     
         15 . The GaN single crystal of  claim 1 , wherein a surface of said GaN single crystal is tilted between 0 and 90 degrees from a (0001) crystallographic axis.  
     
     
         16 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has an n-type conductivity.  
     
     
         17 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has a p-type conductivity.  
     
     
         18 . The GaN single crystal of  claim 1 , wherein said GaN single crystal has an i-type conductivity.  
     
     
         19 . A GaN single crystal, comprising a GaN seed substrate and a GaN boule grown directly on said GaN seed substrate, wherein said GaN boule exceeds 4 cubic centimeters.  
     
     
         20 . The GaN single crystal of  claim 19 , wherein said GaN single crystal has an n-type conductivity.  
     
     
         21 . The GaN single crystal of  claim 19 , wherein said GaN single crystal has a p-type conductivity.  
     
     
         22 . The GaN single crystal of  claim 19 , wherein said GaN single crystal has an i-type conductivity.  
     
     
         23 . A GaN single crystal, comprising a GaN seed substrate and a GaN boule grown directly on said GaN seed substrate, wherein an x, ay, and a z dimension of said GaN boule each exceed 1 centimeter.  
     
     
         24 . The GaN single crystal of  claim 23 , wherein said GaN single crystal has an n-type conductivity.  
     
     
         25 . The GaN single crystal of  claim 23 , wherein said GaN single crystal has a p-type conductivity.  
     
     
         26 . The GaN single crystal of  claim 23 , wherein said GaN single crystal has an i-type conductivity.  
     
     
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