Inventor · disambiguated record
Vladimir A. Dmitriev
Also filed as: DMITRIEV VLADIMIR · DMITRIEV VLADIMIR A · DMITRIEV VLADIMIR ALEXANDROVIC
37 granted patents·11 pending applications·3,778 citations·filing 1974–2021
98Inventor score
Files withTECHNOLOGIES AND DEVICES INTER22DMITRIEV VLADIMIR A6CREE RESEARCH INC4FREIBERGER COMPOUND MAT GMBH4LEVIN FELIX LVOVICH3
Top patents by PatentIndex Score
48 records- 0198US5523589AVertical geometry light emitting diode with group III nitride active layer and extended lifetimeCREE RESEARCH INC·Filed 1994·Granted Jun 4, 1996·1.1k cites·36 claims
- 0298US5338944ABlue light-emitting diode with degenerate junction structureCREE RESEARCH INC·Filed 1993·Granted Aug 16, 1994·475 cites·47 claims
- 0397US8092597B2Method and apparatus for fabricating crack-free Group III nitride semiconductor materialsDMITRIEV VLADIMIR A·Filed 2011·Granted Jan 10, 2012·16 cites·19 claims
- 0497US7501023B2Method and apparatus for fabricating crack-free Group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2004·Granted Mar 10, 2009·57 cites·50 claims
- 0597US6936357B2Bulk GaN and ALGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Aug 30, 2005·80 cites·17 claims
- 0697US5393993ABuffer structure between silicon carbide and gallium nitride and resulting semiconductor devicesCREE RESEARCH INC·Filed 1993·Granted Feb 28, 1995·977 cites·27 claims
- 0796US6613143B1Method for fabricating bulk GaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 2, 2003·85 cites·27 claims
- 0895US6616757B1Method for achieving low defect density GaN single crystal boulesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 9, 2003·61 cites·27 claims
- 0995US6576054B1Method for fabricating bulk AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jun 10, 2003·49 cites·31 claims
- 1094US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 1193US7279047B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Oct 9, 2007·36 cites·29 claims
- 1293US6656285B1Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Dec 2, 2003·47 cites·18 claims
- 1393US5679153AMethod for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structuresCREE RESEARCH INC·Filed 1994·Granted Oct 21, 1997·148 cites·32 claims
- 1492US6660083B2Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 9, 2003·48 cites·47 claims
- 1591US6479839B2III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layerTECHNOLOGIES & DEVICES INTERNA·Filed 2001·Granted Nov 12, 2002·99 cites·51 claims
- 1690US7556688B2Method for achieving low defect density AlGaN single crystal boulesFREIBERGER COMPOUND MAT GMBH·Filed 2005·Granted Jul 7, 2009·15 cites·37 claims
- 1790US6579359B1Method of crystal growth and resulted structuresTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted Jun 17, 2003·91 cites·24 claims
- 1888US6955719B2Manufacturing methods for semiconductor devices with multiple III-V material layersTECHNOLOGIES AND DEVICES INC·Filed 2003·Granted Oct 18, 2005·52 cites·34 claims
- 1988US6706119B2Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 16, 2004·31 cites·26 claims
- 2088US6656272B2Method of epitaxially growing submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 2, 2003·32 cites·30 claims
- 2185US11661673B1HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown therebyOSTENDO TECHNOLOGIES INC·Filed 2021·Granted May 30, 2023·1 cites·8 claims
- 2285US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 2385US7611586B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Nov 3, 2009·12 cites·10 claims
- 2484US6573164B2Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Jun 3, 2003·23 cites·35 claims
- 2583US6849862B2III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layerTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Feb 1, 2005·33 cites·51 claims
- 2681US6562124B1Method of manufacturing GaN ingotsTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted May 13, 2003·46 cites·14 claims
- 2778US6890809B2Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant deviceTECHNOLOGIES AND DEVILES INTER·Filed 2002·Granted May 10, 2005·34 cites·29 claims
- 2875US7670435B2Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 2, 2010·12 cites·66 claims
- 2975US6559467B2P-n heterojunction-based structures utilizing HVPE grown III-V compound layersTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·19 cites·33 claims
- 3075US6218269B1Process for producing III-V nitride pn junctions and p-i-n junctionsTECHNOLOGY AND DEVICES INTERNA·Filed 1998·Granted Apr 17, 2001·54 cites·12 claims
- 3173US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 3273US6559038B2Method for growing p-n heterojunction-based structures utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·18 cites·36 claims
- 3367US2012076968A1Method and apparatus for fabricating crack-free group iii nitride semiconductor materialsDMITRIEV VLADIMIR A·Filed 2011·Application pending·0 cites
- 3466US4007073AMethod of producing articles having alternating magnetic and non-magnetic portions from continuous metal blanksLEVIN FELIX LVOVICH·Filed 1975·Granted Feb 8, 1977·15 cites·8 claims
- 3564US8372199B2Bulk GaN and AlGaN single crystalsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Granted Feb 12, 2013·0 cites·2 claims
- 3664US2009286063A2Method and apparatus for fabricating crack-free group iii nitride semiconductor materialsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 3761US3953252AMethod of manufacturing metal articles having magnetic and non-magnetic areasLEVIN FELIX LVOVICH·Filed 1974·Granted Apr 27, 1976·10 cites·12 claims
- 3860US2006280668A1Method and apparatus for fabricating crack-free group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2006·Application pending·0 cites
- 3958US8092596B2Bulk GaN and AlGaN single crystalsMELNIK YURI V·Filed 2008·Granted Jan 10, 2012·0 cites·10 claims
- 4057US2005164044A1Bulk GaN and AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 4157US2005244997A1Bulk GaN and AIGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 4253US2009286331A2Method for simulatenously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 4352US3960617AMethod of producing metal parts having magnetic and non-magnetic portionsLEVIN FELIX LVOVICH·Filed 1974·Granted Jun 1, 1976·8 cites·19 claims
- 4446US2007032046A1Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
- 4542US2006011135A1HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth runDMITRIEV VLADIMIR A·Filed 2005·Application pending·0 cites
- 4639US2003205193A1Method for achieving low defect density aigan single crystal boulesFiled 2001·Application pending·0 cites
- 4735US2002047135A1P-N junction-based structures utilizing HVPE grown III-V compound layersFiled 2001·Application pending·0 cites
- 4835US2002017650A1III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layerTECHNOLOGIES & DEVICES·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →