Bulk GaN and AIGaN single crystals

Abstract

Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.

1 . (canceled)  
   
   
       2 . (canceled)  
   
   
       3 . (canceled)  
   
   
       4 . (canceled)  
   
   
       5 . (canceled)  
   
   
       6 . (canceled)  
   
   
       7 . (canceled)  
   
   
       8 . (canceled)  
   
   
       9 . (canceled)  
   
   
       10 . (canceled)  
   
   
       11 . (canceled)  
   
   
       12 . (canceled)  
   
   
       13 . (canceled)  
   
   
       14 . (canceled)  
   
   
       15 . (canceled)  
   
   
       16 . (canceled)  
   
   
       17 . (canceled)  
   
   
       18 . (canceled)  
   
   
       19 . (canceled)  
   
   
       20 . (canceled)  
   
   
       21 . (canceled)  
   
   
       22 . (canceled)  
   
   
       23 . (canceled)  
   
   
       24 . (canceled)  
   
   
       25 . (canceled)  
   
   
       26 . (canceled)  
   
   
       27 . An AlGaN single crystal having a volume exceeding 4 cubic centimeters, wherein an x, a y, and a z dimension of said AlGaN single crystal each exceed 1 centimeter.  
   
   
       28 . (canceled)  
   
   
       29 . (canceled)  
   
   
       30 . (canceled)  
   
   
       31 . (canceled)  
   
   
       32 . (canceled)  
   
   
       33 . (canceled)  
   
   
       34 . (canceled)  
   
   
       35 . (canceled)  
   
   
       36 . (canceled)  
   
   
       37 . (canceled)  
   
   
       38 . (canceled)  
   
   
       39 . (canceled)  
   
   
       40 . (canceled)  
   
   
       41 . (canceled)  
   
   
       42 . (canceled)  
   
   
       43 . (canceled)  
   
   
       44 . (canceled)  
   
   
       45 . A AlGaN single crystal, comprising a AlGaN seed substrate and a AlGaN boule grown directly on said AlGaN seed substrate, wherein an x, a y, and a z dimension of said AlGaN boule each exceed 1 centimeter.