Method and device for correcting pattern film on a semiconductor substrate

Abstract

In order to correct a white defect on a surface of a substrate, the substrate is held with the surface facing downward, laser light is upward irradiated at the defect on the surface in material gas, and as a result, the white defect is covered with film.

1 . A method of correcting defects of pattern film on a surface of a substrate, comprising the steps of: 
 holding the substrate with the surface facing downward;    blowing material gas for forming pattern film to the surface; and    irradiating laser light upward at a white defect on the surface to form pattern film over the white defect.    
   
   
       2 . The method claimed in  claim 1 , further comprising the steps of: 
 irradiating laser light upward at a black defect on the surface; and    vaporizing unnecessary part of pattern film in order to correct the black defect.    
   
   
       3 . The method claimed in  claim 1 , further comprising the steps of: 
 blowing oxygen gas to the surface;    irradiating first laser light upward to unnecessary part of pattern film on the surface in order to oxidize the top layer of the part;    irradiating second laser light upward to the oxidized top layer in order to peel the oxidized top layer off; and    repeating the steps of irradiating first and second laser light in order to eliminate the unnecessary part of pattern film.    
   
   
       4 . The method claimed in clam  1 , wherein: 
 the step of blowing further blows purge gas, which prevents a window for conducting laser light from clouding, and carrier gas, which is included in CVD gas for carrying material gas; and    the main component of the purge and carrier gases is helium gas.    
   
   
       5 . The method claimed in  claim 1 , wherein the substrate is sucked in order to be held at the step of holding.