Photoresist residue remover composition and semiconductor circuit element production process employing the same

Abstract

A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

1 . A photoresist residue remover composition for removing a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition comprising one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound, wherein the amount of inorganic acid added is 30% by mass or less, and the amount of inorganic fluorine compound added is 0.001 to 0.015% by mass on a hydrofluoric acid basis, with the proviso that the composition dose not contain organic acid, quarterly alkyl ammonium, hydrogen peroxide and ozone.  
     
     
         2 . The photoresist residue remover composition according to  claim 1 , wherein the inorganic aid is selected from the group of sulfuric acid, nitric acid, hydrochloric acid or phosphoric acid.  
     
     
         3 . The photoresist residue remover according to  claim 1 , wherein the inorganic fluorine compound is selected from the group of hydrofluoric acid, ammonium fluoride or ammonium hydrogen fluoride.  
     
     
         4 . The photoresist residue remover composition according to  claim 1 , wherein the inorganic acid is sulfuric acid.  
     
     
         5 . The photoresist residue remover composition according to  claim 1 , wherein the inorganic fluorine compound is hydrofluoric acid.  
     
     
         6 . The photoresist residue remover composition according to  claim 1 , wherein further contain a complexing agent.  
     
     
         7 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 1  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         8 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 2  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         9 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 3  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         10 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 4  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         11 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 5  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         12 . A process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition according to  claim 6  is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.  
     
     
         13 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 1  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.  
     
     
         14 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 2  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.  
     
     
         15 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 3  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.  
     
     
         16 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 4  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.  
     
     
         17 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 5  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.  
     
     
         18 . A process for producing a semiconductor circuit element, wherein the photoresist residue remover composition according to  claim 6  is used for carrying out a pre-treatment or a post-treatment on multilayer wiring.