Power semiconductor module

Abstract

A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.

1 . A power semiconductor module, comprising: 
 a metal base comprising a heat sink;    a semiconductor chip;    a ceramic substrate;    a circuit assembly body comprising    a circuit assembly body comprising 
 an upper circuit plate,  
 a ceramic plate, and  
 the ceramic substrate, wherein the semiconductor chip is placed on the ceramic substrate which is then placed on the metal base; and  
   an outer case having terminals formed integrally therein,    wherein the ceramic substrate has no lower plate and in the ceramic substrate, a silver wax material brazes the upper circuit plate joined to the ceramic plate and the metal base.    
   
   
       2 . The power semiconductor module according to  claim 1 , wherein the power semiconductor module comprises placing at least one ceramic substrate on the metal base.