Electronic circuit device having silicon substrate

Abstract

An electronic circuit device having a silicon substrate is provided comprising: a silicon substrate having a semiconductor element and a recess; and at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed. In the electronic circuit device, the passive element is entrenched in the recess of the silicon substrate, and the semiconductor element formed on the silicon substrate is electrically connected to the passive element.

1 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element and a recess; and    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:    the passive element is entrenched in the recess of the silicon substrate; and    the semiconductor element formed on the silicon substrate is electrically connected to the passive element.    
   
   
       2 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element and a recess; and    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:    the passive element has a protruded terminal; and    the protruded terminal of the passive element is inserted into the recess of the silicon substrate to electrically connect the semiconductor element to the passive element.    
   
   
       3 . An electronic circuit device according  claim 1 , wherein a shape of the recess has at least two levels in a depth direction.  
   
   
       4 . An electronic circuit device according  claim 2 , wherein a shape of the recess has at least two levels in a depth direction.  
   
   
       5 . An electronic circuit device according to claims  1 , wherein: 
 the shape of the recess has at least one convex from a plane of the recess; and    the passive element has a concave which fits into the convex of the recess.    
   
   
       6 . An electronic circuit device according to claims  2 , wherein: 
 the shape of the recess has at least one convex from a plane of the recess; and    the passive element has a concave which fits into the convex of the recess.    
   
   
       7 . An electronic circuit device having a silicon substrate according to claims  1 , wherein: 
 the shape of the recess has at least one concave in a plane of the recess; and    the passive element has a concave which fits into the concave of the recess.    
   
   
       8 . An electronic circuit device having a silicon substrate according to claims  2 , wherein: 
 the shape of the recess has at least one concave in a plane of the recess; and    the passive element has a concave which fits into the concave of the recess.    
   
   
       9 . An electronic circuit device according to claims  1 , wherein the passive element has a cylindrical shape, and has conductive terminals at both ends thereof.  
   
   
       10 . An electronic circuit device according to claims  2 , wherein the passive element has a cylindrical shape, and has conductive terminals at both ends thereof.  
   
   
       11 . An electronic circuit device according to claims  1 , wherein the recess exists in a back surface of the semiconductor substrate on which the semiconductor element is formed in a front surface.  
   
   
       12 . An electronic circuit device according to claims  2 , wherein the recess exists in a back surface of the semiconductor substrate on which the semiconductor element is formed in a front surface.  
   
   
       13 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element on a front surface thereof and at least one through hole, which penetrates through the front surface and the back surface;    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed; and    a connecting element disposed in the through hole for electrically connecting the semiconductor element to the passive element, wherein the surface of the connecting element is comprised of an insulating resin.    
   
   
       14 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element on a front surface thereof, a recess on a back surface thereof and at least one through hole, which penetrates through the front surface and the back surface, in the recess; and    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed and which is disposed in the recess;    and a connecting element disposed in the through hole for electrically connecting the semiconductor element to the passive element, wherein the surface of the connecting element is comprised of an insulating resin.    
   
   
       15 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element on a front surface thereof; and at least one through hole, which penetrates through the front surface and the back surface; and    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:    the passive element has a protruded terminal;    the protruded terminal of the passive element is entrenched in the through hole on the side of the back surface of the silicon substrate on which the semiconductor element is formed; and    the semiconductor element formed on the silicon substrate is electrically connected to the passive element.    
   
   
       16 . An electronic circuit device, comprising: 
 a silicon substrate having a semiconductor element on a front surface thereof; a recess on a back surface thereof; and at least one through hole, which penetrates through the front surface and the back surface, in the recess; and    at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:    the passive element has a protruded terminal that fits into the through hole;    the protruded terminal of the passive element is entrenched in the through hole on the side of the back surface of the silicon substrate on which the semiconductor element is formed; and    the semiconductor element formed on the silicon substrate is electrically connected to the passive element.    
   
   
       17 . An electronic circuit device according to claims  1 , wherein an antenna is used as a passive element.  
   
   
       18 . An electronic circuit device according to claims  2 , wherein an antenna is used as a passive element.  
   
   
       19 . An electronic circuit device having a silicon substrate according to claims  1 , wherein a sensor element is used as a passive element.  
   
   
       20 . An electronic circuit device having a silicon substrate according to claims  2 , wherein a sensor element is used as a passive element.  
   
   
       21 . An electronic circuit device according to claims  1 , wherein an electronic component including an MEMS (Micro Electro Mechanical System) is used instead of the passive element.  
   
   
       22 . An electronic circuit device according to claims  2 , wherein an electronic component including an MEMS (Micro Electro Mechanical System) is used instead of the passive element.