Method for mounting semiconductor device, as well as circuit board, electrooptic device, and electronic device

Abstract

A method of forming a bonded structure comprises the steps of: mounting a semiconductor device having an electrode; a convexity protruding higher than the electrode and formed of a resin; and a conductive unit electrically coupled to the electrode and extending over the surface of the convexity, onto a specific substrate with an intermediary of a bonding material; and mounting the semiconductor device by hot pressing within a temperature range including the glass transition temperature of the resin.

1 . A method of forming a bonded structure, comprising the steps of: 
 providing a semiconductor device onto a substrate with an intermediary of a bonding material, the semiconductor device having: 
 an electrode;  
 a convexity protruding higher than the electrode and formed of a resin; and  
 a conductive unit electrically coupled to the electrode and extending over a surface of the convexity; and  
   forming the bonded structure by hot pressing within a temperature range including a glass transition temperature of the resin.    
   
   
       2 . The method of forming a bonded structure according to  claim 1 , wherein the temperature of forming the bonded structure is at least equal to a temperature at which an elastic modulus of the resin decreases.  
   
   
       3 . The method of forming a bonded structure according to  claim 1 , wherein the resin to be used further comprises polyimide and the temperature of forming the bonded structure is between 200 degrees Celsius and 260 degrees Celsius inclusive.  
   
   
       4 . The method of forming a bonded structure according to  claim 1 , wherein the resin further comprises one of acrylic resin and phenolic resin.  
   
   
       5 . The method of forming a bonded structure according to  claim 1 , further comprising the steps of: 
 providing a plurality of the electrodes;    forming a series of the convexities on the plurality of electrodes, the convexities being adjacent to each other;    forming the conductive unit on a surface of the convexities corresponding to each of the electrodes; and    electrically coupling the conductive unit and the electrode.    
   
   
       6 . The method of forming a bonded structure according to  claim 1 , wherein the step of forming the conductive unit further comprises the steps of: 
 forming a conductive layer by sputtering; and    forming a first conductive layer by patterning the conductive layer, the first conductive layer being coupled to the electrode and extending over a surface of the convexity.    
   
   
       7 . The method of forming a bonded structure according to  claim 6 , wherein the step of forming the conductive unit further comprises the steps of: 
 forming a second conductive layer on the conductive layer by plating; and    forming a first conductive layer by removing part of the conductive layer that is not covered with the second conductive layer.    
   
   
       8 . The method of forming a bonded structure according to  claim 1 , wherein the bonding material further comprises a non-conductive bonding material.  
   
   
       9 . A circuit board comprising a semiconductor device manufactured by the method of forming a bonded structure according to  claim 1 .  
   
   
       10 . An electro-optic device comprising the circuit board according to  claim 9 .  
   
   
       11 . An electronic device comprising the electro-optic device according to  claim 10.