US2005236268A1PendingUtilityA1

Substrate processing apparatus

34
Assignee: MISHIMA KOJIPriority: Apr 21, 2004Filed: Apr 20, 2005Published: Oct 27, 2005
Est. expiryApr 21, 2024(expired)· nominal 20-yr term from priority
H10P 14/47H10P 72/0472H10P 72/0452H10P 72/0402H10W 20/056H10P 72/0476C25D 21/04C25D 5/48C25D 17/001C25D 5/50C25D 7/123C23C 18/1632
34
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Claims

Abstract

A substrate processing apparatus has a plating apparatus configured to plate a substrate to deposit a metal on a surface of the substrate and an additional process apparatus configured to perform an additional process on the substrate. The plating apparatus has a substrate placement stage on which the substrate to be transferred to the additional process apparatus is placed. The additional process apparatus has an additional process unit configured to perform the additional process on the substrate and a substrate transfer device operable to transfer the substrate between the substrate placement stage of the plating apparatus and the additional process unit. The substrate processing apparatus can perform an additional process in addition to a plating process without lowering a throughput of the apparatus and can upgrade the additional process at a low cost.

Claims

exact text as granted — not AI-modified
1 . A substrate processing apparatus comprising: 
 a plating apparatus configured to plate a substrate so as to deposit a metal on a surface of the substrate; and    an additional process apparatus configured to perform an additional process on the substrate,    wherein said plating apparatus comprises a substrate placement stage on which the substrate to be transferred to said additional process apparatus is placed,    wherein said additional process apparatus comprises: 
 an additional process unit configured to perform the additional process on the substrate; and  
 a substrate transfer device operable to transfer the substrate between said substrate placement stage of said plating apparatus and said additional process unit.  
   
     
     
         2 . The substrate processing apparatus as recited in  claim 1 , wherein said plating apparatus and said additional process apparatus are disposed independently of each other.  
     
     
         3 . The substrate processing apparatus as recited in  claim 1 , wherein said additional process unit comprises an annealing unit configured to heat the substrate.  
     
     
         4 . The substrate processing apparatus as recited in  claim 1 , wherein said additional process unit comprises a cleaning unit configured to clean the substrate.  
     
     
         5 . The substrate processing apparatus as recited in  claim 1 , wherein said additional process unit comprises an etching unit configured to etch the substrate.  
     
     
         6 . The substrate processing apparatus as recited in  claim 1 , wherein said additional process unit comprises a polishing unit configured to polish the substrate.  
     
     
         7 . The substrate processing apparatus as recited in  claim 1 , wherein said additional process unit comprises a film thickness measurement unit configured to measure a film thickness of the metal film formed on the surface of the substrate.  
     
     
         8 . The substrate processing apparatus as recited in  claim 1 , wherein said plating apparatus is configured to fill fine recesses formed in the substrate with the metal.  
     
     
         9 . The substrate processing apparatus as recited in  claim 1 , wherein the metal contains at least one of copper, cobalt, nickel, gold, and tin.  
     
     
         10 . A substrate processing apparatus comprising: 
 a plating apparatus configured to plate a substrate; and    an additional process apparatus configured to perform an additional process on the substrate, said additional process apparatus being disposed adjacent to said plating apparatus,    wherein said plating apparatus comprises: 
 a plating unit configured to plate the substrate so as to deposit a metal on a surface of the substrate;  
 a first substrate transfer device operable to transfer the substrate in said plating apparatus; and  
 a substrate placement stage on which the substrate to be transferred to said additional process apparatus is placed,  
   wherein said additional process apparatus comprises: 
 an additional process unit configured to perform the additional process on the substrate; and  
 a second substrate transfer device operable to transfer the substrate between said substrate placement stage of said plating apparatus and said additional process unit.  
   
     
     
         11 . The substrate processing apparatus as recited in  claim 10 , wherein said plating apparatus and said additional process apparatus are disposed independently of each other.  
     
     
         12 . The substrate processing apparatus as recited in  claim 10 , wherein said additional process unit comprises an annealing unit configured to heat the substrate.  
     
     
         13 . The substrate processing apparatus as recited in  claim 10 , wherein said additional process unit comprises a cleaning unit configured to clean the substrate.  
     
     
         14 . The substrate processing apparatus as recited in  claim 10 , wherein said additional process unit comprises an etching unit configured to etch the substrate.  
     
     
         15 . The substrate processing apparatus as recited in  claim 10 , wherein said additional process unit comprises a polishing unit configured to polish the substrate.  
     
     
         16 . The substrate processing apparatus as recited in  claim 10 , wherein said additional process unit comprises a film thickness measurement unit configured to measure a film thickness of the metal film formed on the surface of the substrate.  
     
     
         17 . The substrate processing apparatus as recited in  claim 10 , wherein said plating apparatus is configured to fill fine recesses formed in the substrate with the metal.  
     
     
         18 . The substrate processing apparatus as recited in  claim 10 , wherein the metal contains at least one of copper, cobalt, nickel, gold, and tin.  
     
     
         19 . A substrate processing apparatus comprising: 
 a main process apparatus configured to perform a main process on a substrate; and    an additional process apparatus configured to perform an additional process on the substrate,    wherein said main process apparatus comprises a substrate placement stage on which the substrate to be transferred to said additional process apparatus is placed,    wherein said additional process apparatus comprises: 
 an additional process unit configured to perform the additional process on the substrate; and  
 a substrate transfer device operable to transfer the substrate between said substrate placement stage of said main process apparatus and said additional process unit.  
   
     
     
         20 . A substrate processing apparatus comprising: 
 a plating unit configured to plate a substrate so as to deposit a metal on a surface of the substrate;    a cleaning and drying unit configured to clean and dry the substrate;    a substrate transfer device operable to transfer the substrate between said plating unit and said cleaning and drying unit;    an air supply system configured to supply at least one of intake air and circulation air into said substrate processing apparatus; and    a volatile substance removal mechanism configured to remove a volatile substance contained in the at least one of intake air and circulation air to be supplied by said air supply system.    
     
     
         21 . The substrate processing apparatus as recited in  claim 20 , wherein said volatile substance removal mechanism comprises a chemical filter capable of removing the volatile substance contained in the at least one of intake air and circulation air.  
     
     
         22 . The substrate processing apparatus as recited in  claim 21 , wherein said chemical filter is provided at an upper portion of said substrate processing apparatus.  
     
     
         23 . The substrate processing apparatus as recited in  claim 21 , wherein said chemical filter comprises at least one of activated carbon, zeolite, a polymer membrane, polymer fiber, and non-woven fabric, or a member chemically modified by at least one of activated carbon, zeolite, a polymer membrane, polymer fiber, and non-woven fabric.  
     
     
         24 . The substrate processing apparatus as recited in  claim 20 , wherein said volatile substance removal mechanism comprises a combination filter including a chemical filter capable of removing the volatile substance contained in the at least one of intake air and circulation air and a particulate removal filter capable of removing fine particles in the at least one of intake air and circulation air.  
     
     
         25 . The substrate processing apparatus as recited in  claim 20 , wherein said volatile substance removal mechanism comprises a scrubber operable to clean the at least one of intake air and circulation air.  
     
     
         26 . The substrate processing apparatus as recited in  claim 20 , wherein said volatile substance removal mechanism comprises a heating furnace operable to pyrolyze the volatile substance contained in the at least one of intake air and circulation air.  
     
     
         27 . A substrate processing apparatus comprising: 
 a plating unit configured to plate a substrate so as to deposit a metal on a surface of the substrate;    a cleaning and drying unit configured to clean and dry the substrate;    a substrate transfer device operable to transfer the substrate between said plating unit and said cleaning and drying unit; and    a pressure controller operable to control a pressure of an interior of said substrate processing apparatus so as to be lower than a pressure of an exterior of said substrate processing apparatus and control pressures of interiors of said plating unit and said cleaning and drying unit so as to be lower than the pressure of the interior of said substrate processing apparatus.

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