US2005247927A1PendingUtilityA1

Assemblies displaying differential negative resistance

48
Individually held — no corporate assignee on recordPriority: Jul 10, 2002Filed: Jul 14, 2005Published: Nov 10, 2005
Est. expiryJul 10, 2022(expired)· nominal 20-yr term from priority
Inventors:Kristy A. Campbell
H10D 62/82H10D 8/70H10N 80/01H10N 80/00
48
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Claims

Abstract

The invention includes a device displaying differential negative resistance characterized by a current-versus-voltage profile having a peak-to-valley ratio of at least about 9. The invention also includes a semiconductor construction comprising a substrate, and a first layer over the substrate. The first layer comprises Ge and one or more of S, Te and Se. A second layer is over the first layer. The second layer comprises M and A, where M is a transition metal and A is one or more of O, S, Te and Se. A third layer is over the second layer, and comprises Ge and one or more of S, Te and Se. The first, second and third layers are together incorporated into an assembly displaying differential negative resistance. Additionally, the invention includes methodology for forming assemblies displaying differential negative resistance, such as tunnel diode assemblies.

Claims

exact text as granted — not AI-modified
1 - 18 . (canceled)  
   
   
       19 . A composition containing Ag and Se, and comprising at least 4 quantized energy levels which are accessed when the composition is exposed to voltages having an absolute value of from 0 to 3.5 volts.  
   
   
       20 . The composition of  claim 19  comprising at least 6 quantized energy levels which are accessed when the composition is exposed to the voltages having an absolute value of from 0 to 3.5 volts.  
   
   
       21 . The composition of  claim 19  comprising at least 10 quantized energy levels which are accessed when the composition is composition to the voltages having an absolute value of from 0 to 3.5 volts.  
   
   
       22 . The composition of  claim 19  comprising at least 15 quantized energy levels which are accessed when the composition is exposed to the voltages having an absolute value of from 0 to 3.5 volts.  
   
   
       23 . The composition of  claim 19  comprising at least 20 quantized energy levels which are accessed when the composition is exposed to the voltages having an absolute value of from 0 to 3.5 volts.  
   
   
       24 . The composition of  claim 19  consisting essentially of Ag and Se.  
   
   
       25 . The composition of  claim 19  consisting essentially of Ag( 2+ Δ)Se, where Δ is greater than 0.  
   
   
       26 - 125 . (canceled)

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