Shallow trench isolation structure and method

Abstract

Disclosed is a shallow trench isolation (STI) structure and methods of manufacturing the same. The methods eliminate the requirement for design size adjustments (DSA) in manufacturing the STI structure. Further disclosed is an STI trench liner and methods for the formation thereof by growing a thin oxide layer on shallow isolation trench surfaces while preventing oxide formation on adjacent nitride surfaces, followed by the deposition of, and oxide growth upon, a polysilicon layer.

1 - 18 . (canceled)  
   
   
       19 . In a semiconductor device, a shallow trench isolation structure liner comprising: 
 an oxide layer affixed to the trench walls;    a polysilicon layer affixed to the oxide layer; and    a polysilicon oxide layer affixed to the polysilicon layer.    
   
   
       20 . A shallow trench isolation structure liner as in  claim 19  wherein the oxide layer is less than approximately 50 Å in thickness.  
   
   
       21 . A shallow trench isolation structure liner as in  claim 19  wherein the oxide layer is greater than approximately 10 Å in thickness.  
   
   
       22 . A shallow trench isolation structure liner as in  claim 19  wherein the oxide layer is from approximately 10 Å to approximately 50 Å in thickness.  
   
   
       23 . A shallow trench isolation structure liner as in  claim 19  wherein the polysilicon layer is less than approximately 100 Å in thickness.  
   
   
       24 . A shallow trench isolation structure liner as in  claim 19  wherein the polysilicon layer is greater than approximately 25 Å in thickness.  
   
   
       25 . A shallow trench isolation structure liner as in  claim 19  wherein the polysilicon layer is from approximately 25 Å to approximately 100 Å in thickness.