Manufacturing methods for semiconductor structures having stacked semiconductor devices

Abstract

Methods of manufacturing a semiconductor structure are provided. The method comprises the steps of providing a first substrate having a first surface, providing a semiconductor device, electrically and physically coupling the semiconductor device to the first surface of said first substrate, providing a second substrate having a first surface, a second surface, and a cavity formed in said first surface, positioning the second substrate over said first substrate, and coupling the second substrate to the first substrate such that the semiconductor device is positioned at least partially within the cavity.

1 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface;    providing a semiconductor device;    electrically and physically coupling said semiconductor device to said first surface of said first substrate;    providing a second substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said second substrate over said first substrate; and    coupling said second substrate to said first substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       2 . The method according to  claim 1 , further comprising both electrically and physically coupling said second substrate to said first substrate.  
   
   
       3 . The method according to  claim 1 , further comprising electrically coupling said first semiconductor device to said first substrate by conductive balls.  
   
   
       4 . The method according to  claim 1 , further comprising electrically coupling said second substrate to said first substrate by conductive balls, and electrically coupling said semiconductor device to said first substrate by conductive balls.  
   
   
       5 . The method according to  claim 1 , wherein: 
 said first semiconductor device further comprises electrically conductive semiconductor device pads;    said first substrate further comprises electrically conductive first substrate pads;    and further comprising:    electrically and physically coupling said first semiconductor device to said first substrate by a plurality of conductive balls, each conductive ball arranged to couple a select one of said semiconductor device pads to an associated on of said first substrate pads.    
   
   
       6 . The method according to  claim 1 , further comprising positioning said first semiconductor device entirely within said cavity.  
   
   
       7 . The method according to  claim 1 , further comprising electrically and physically coupling a second semiconductor device to said second surface of said second substrate.  
   
   
       8 . The method according to  claim 7 , further comprising: 
 providing a third substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said third substrate over said second substrate; and    coupling said third substrate to said second substrate such that said second semiconductor device is positioned at least partially within said cavity of said third substrate.    
   
   
       9 . The method according to  claim 1 , further comprising providing at least one additional semiconductor device electrically and physically coupled to said first substrate and positioned at least partially within said cavity.  
   
   
       10 . The method according to  claim 1 , further comprising: 
 providing at least one additional semiconductor device;    electrically and physically coupling said at least one additional semiconductor device to said first substrate,    providing at least one additional cavity formed in said first surface of said second substrate;    positioning said second substrate over said first substrate;    coupling said second substrate to said first substrate such that at least one semiconductor device is positioned at least partially within each cavity.    
   
   
       11 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface;    providing a semiconductor device;    electrically and physically coupling said semiconductor device to said first surface of said base substrate;    providing a first substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said first substrate over said base substrate; and    coupling said first substrate to said base substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       12 . The method according to  claim 11 , further comprising electrically and physically coupling said first substrate to said base substrate.  
   
   
       13 . The method according to  claim 11 , further comprising electrically and physically coupling said first semiconductor device to said base substrate by conductive balls.  
   
   
       14 . The method according to  claim 11 , further comprising electrically coupling said first substrate to said base substrate by conductive balls, and electrically coupling said semiconductor device to said base substrate by conductive balls.  
   
   
       15 . The method according to  claim 11 , further comprising: 
 providing said first semiconductor device with electrically conductive semiconductor device pads;    providing said base substrate with electrically conductive base substrate pads; and    electrically and physically coupling said first semiconductor device to said base substrate by a plurality of conductive balls, each conductive ball arranged to couple a select one of said semiconductor device pads to an associated on of said base substrate pads.    
   
   
       16 . The method according to  claim 11 , further comprising positioning said first semiconductor device entirely within said cavity.  
   
   
       17 . The method according to  claim 11 , further comprising: 
 electrically and physically coupling a second semiconductor device to said second surface of said first substrate.    
   
   
       18 . The method according to  claim 11 , further comprising: 
 providing a second substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said second substrate over said first substrate;    coupling said second substrate to said first substrate such that said second semiconductor device is positioned at least partially within said cavity of said second substrate.    
   
   
       19 . The method according to  claim 11 , further comprising providing at least one additional semiconductor device electrically and physically coupled to said base substrate and positioned at least partially within said cavity.  
   
   
       20 . The method according to  claim 11 , further comprising: 
 providing at least one additional semiconductor device;    electrically and physically coupling said at least one semiconductor device to said base substrate, wherein said first substrate further comprises at least one additional cavity formed in said first surface, said first substrate positioned over and coupled to said base substrate such that at least one semiconductor device is positioned at least partially within each cavity.    
   
   
       21 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface;    providing a semiconductor device;    arranging said semiconductor device over said first surface of said first substrate;    electrically coupling said semiconductor device to said first substrate using conductive balls;    providing a second substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said second substrate over said first substrate; and    coupling said second substrate to said first substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       22 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface;    providing a semiconductor device;    arranging said semiconductor device over said first surface of said base substrate;    electrically coupling said semiconductor to said base substrate using conductive balls;    providing a first substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said first substrate over said base substrate;    coupling said first substrate to said base substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       23 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface and a plurality of conductive first substrate pads on said first surface;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    arranging said semiconductor device over said first surface of said first substrate;    electrically coupling said semiconductor device to said first substrate such that a select semiconductor device pad is electrically coupled to an associated one first substrate pad by conductive ball;    providing a second substrate having a first surface, a-second surface, and a cavity formed in said first surface;    positioning said second substrate over said first substrate; and    coupling said second substrate to said first substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       24 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface and a plurality of conductive base substrate pads on said first surface;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    arranging said semiconductor device over said first surface of said base substrate;    electrically coupling said semiconductor device to said base substrate such that a select semiconductor device pad is electrically coupled to an associated base substrate pad by a conductive ball;    providing a first substrate having a first surface, a second surface, and a cavity formed in said first surface;    positioning said first substrate over said base substrate; and    coupling said first substrate to said base substrate such that said semiconductor device is positioned at least partially within said cavity.    
   
   
       25 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface and a plurality of conductive first substrate pads on said first surface;    providing a second substrate having a first surface, a second surface, a plurality of conductive second substrate pads on said first surface, and a cavity formed in said first surface;    positioning said second substrate over said first substrate such said cavity is directed towards said first surface of said first substrate;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    arranging said semiconductor device over said first surface of said first substrate;    positioning said semiconductor device at least partially within said cavity of said second substrate;    electrically coupling said semiconductor device and said second substrate to said first substrate using conductive balls, each conductive ball electrically coupling a select first substrate pad to an associated one semiconductor device pad or second substrate pad.    
   
   
       26 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface including a first plurality of conductive base substrate pads formed thereon;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    electrically coupling a select one of said plurality of semiconductor device pads to an associated one of said first plurality of base substrate pads;    providing a first substrate having an opening extending completely therethrough;    positioning said first substrate over said base substrate; and    coupling said first substrate to said base substrate such that said semiconductor device is positioned generally within said opening.    
   
   
       27 . The method according to  claim 26 , further comprising electrically coupling said first semiconductor device to said base substrate by conductive balls.  
   
   
       28 . The method according to  claim 26 , further comprising: 
 providing an interconnect device positioned at least partially over said first opening and coupled to said first substrate.    
   
   
       29 . The method according to  claim 28 , further comprising: 
 providing a second semiconductor device; and    electrically and physically coupling said second semiconductor device to said interconnect device.    
   
   
       30 . The method according to  claim 28 , further comprising providing a second semiconductor device; and 
 electrically and physically coupling said second semiconductor device to said interconnect device, wherein said interconnect device comprises a flex circuit and said second semiconductor device is electrically coupled to said flex circuit by conductive balls.    
   
   
       31 . The method according to  claim 28 , further comprising providing a second semiconductor device; and electrically and physically coupling said second semiconductor device to said interconnect device, wherein said interconnect device comprises a TAB tape having conductive bumps electrically coupled to said second semiconductor device.  
   
   
       32 . The method according to  claim 26 , further comprising providing at least one additional semiconductor device; and electrically and physically coupling said at least one additional semiconductor device to said base substrate positioned generally within said opening.  
   
   
       33 . The method according to  claim 26 , further comprising providing at least one additional semiconductor device electrically and physically coupled to said base substrate, wherein said first substrate further comprises at least one additional opening therein, said first substrate positioned over and coupled to said base substrate such that at least one semiconductor device is positioned generally within each opening.  
   
   
       34 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having an opening therethrough;    providing an interconnect device;    positioning said interconnect device over said opening;    coupling said interconnect device to said first substrate;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    positioning said semiconductor device generally over said at least one opening and said interconnect device;    arranging said semiconductor device such that at least one of said plurality of semiconductor device pads is electrically coupled to said interconnect device.    
   
   
       35 . The method according to  claim 34 , further comprising electrically coupling said first semiconductor device to said interconnect device by conductive balls.  
   
   
       36 . The method according to  claim 34 , wherein said first interconnect device comprises a flex circuit and further comprising electrically coupling said first semiconductor device to said flex circuit by conductive balls such that a select conductive ball electrically couples a select semiconductor device pad to an associated contact on said interconnect device.  
   
   
       37 . The method according to  claim 34 , wherein said interconnect device comprises a TAB tape having conductive bumps arranged such that a select conductive bump electrically couples to an associated semiconductor device pad.  
   
   
       38 . The method according to  claim 34 , further comprising providing at least one additional semiconductor device; and electrically and physically coupling said at least one additional semiconductor device to said interconnect device positioned generally over said opening.  
   
   
       39 . The method according to  claim 34 , wherein said first substrate further comprises at least one additional opening therein, each opening at least partially covered by an associated interconnect device, and further comprising providing at least one additional semiconductor device positioned over, and electrically coupled to each associated interconnect device.  
   
   
       40 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having an opening therethrough, and a surface including a plurality of conductive first substrate pads;    providing an interconnect device having a plurality of contacts;    positioning said interconnect device over said opening;    coupling said interconnect device to said first substrate;    providing a semiconductor device having a plurality of conductive semiconductor device pads;    positioning said semiconductor device generally over said opening;    electrically coupling said semiconductor device to said interconnect device such that a select semiconductor device pad is coupled to an associated contact.    
   
   
       41 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface including a first plurality of conductive base substrate pads formed thereon;    providing a first semiconductor device having a plurality of conductive first semiconductor device pads;    positioning said first semiconductor device over said base substrate;    electrically coupling said first semiconductor to said base substrate such that a select first semiconductor device pad is electrically coupled to an associated base substrate pad;    providing a first substrate having an opening therethrough;    arranging said first substrate over said base substrate;    coupling said first substrate to said base substrate such that said first semiconductor is positioned generally within said opening;    providing an interconnect device;    positioning said interconnect device over said opening;    coupling said interconnect device to said first substrate;    providing a second semiconductor device having a plurality of conductive second semiconductor device pads;    positioning said second semiconductor device generally over said opening; and    coupling said second semiconductor device to said interconnect device.    
   
   
       42 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface, a second surface and a first opening entirely through said first substrate;    providing a first interconnect device;    coupling said interconnect device to a select one of said first and second surfaces of said first substrate such that said interconnect device extends across at least a portion of said first opening;    providing a first semiconductor; and    coupling said first semiconductor to said first interconnect device.    
   
   
       43 . A method of manufacturing a semiconductor structure comprising: 
 providing a base substrate having a first surface;    providing a first substrate having a first surface, a second surface and a first opening entirely through said first substrate;    coupling said first substrate to said base substrate;    providing a first interconnect device;    coupling said first interconnect device to said first substrate;    positioning said first interconnect device between said first substrate and said base substrate such that said interconnect device extends across at least a portion of said first opening;    providing a first semiconductor;    positioning said first semiconductor generally within said first opening of said first substrate; and    coupling said first semiconductor to said first interconnect device.    
   
   
       44 . The method according to  claim 43 , further comprising electrically coupling said first semiconductor device to said first interconnect device by conductive balls.  
   
   
       45 . The method according to  claim 44 , further comprising electrically coupling said first interconnect device to said first substrate.  
   
   
       46 . The method according to  claim 43 , further comprising electrically coupling said first semiconductor device to said first substrate by bond wires.  
   
   
       47 . The method according to  claim 43 , wherein said interconnect device comprises a flex circuit and further comprising electrically coupling said second semiconductor device to said flex circuit by conductive balls.  
   
   
       48 . The method according to  claim 43 , further comprising providing at least one additional semiconductor device; and coupling said at least one additional semiconductor device to said first interconnect device positioned generally within said first opening of said first substrate.  
   
   
       49 . The method according to  claim 43 , further comprising providing at least one additional interconnect device, wherein said first substrate further comprises at least one additional opening therein, providing a select additional interconnect device; coupling said select additional interconnect device to said first substrate positioned between said first substrate and said base substrate such that said select additional interconnect device extends across at least a portion of an associated additional opening, and further comprising providing at least one semiconductor device positioned generally within each additional opening.  
   
   
       50 . A method of manufacturing a semiconductor structure comprising: 
 providing a first substrate having a first surface, a second surface and a first substrate opening entirely through said first substrate;    providing a first interconnect device;    coupling said first interconnect device to said second surface of said first substrate such that said first interconnect device extends across at least a portion of said first substrate opening;    providing a first semiconductor device;    positioning said first semiconductor device generally within said first substrate opening of said first substrate;    coupling said first semiconductor device to said first interconnect device;    providing a second substrate having a first surface, a second surface and a second substrate opening entirely therethrough;    positioning said second substrate over said first substrate;    coupling said second substrate to said first substrate;    providing a second interconnect device;    coupling said second interconnect device to said second surface of said second substrate such that said second interconnect device extends across at least a portion of said second substrate opening and is positioned between said first and second substrates;    providing a second semiconductor device;    positioning said second semiconductor device generally within said second substrate opening of said second substrate; and    coupling said second semiconductor device to said second interconnect device.