Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device

Abstract

A vapor phase deposition apparatus 100 for forming a thin film comprising a chamber 1060, a piping unit 120 for supplying a source material of the thin film into the chamber 1060 in a gaseous condition, a vaporizer 202 for vaporizing the source material in a source material container 112 and supplying the vaporized gas in the piping unit 120 and a temperature control unit 180, is presented. The temperature control unit 180 comprises: a first temperature control unit 174, which is composed of a heater controller unit 172 and a tape heater 170 and is capable of controlling the temperature of the first piping 116 in the piping unit 120 that is directly connected to the chamber 1060; a second temperature control unit 176, which is composed of a heater controller unit 168 and a tape heater 166 and is capable of controlling the temperature of the second piping 114 that is connected to the vaporizer; and a third temperature control unit 178, which is composed of a heater controller unit 167 and a thermostatic chamber 153 and is capable of controlling the temperature of the valve 159.

1 . A vapor phase deposition apparatus for forming a thin film, comprising: 
 a chamber;    a vaporizing unit that vaporizes a source material for said thin film to generate a source gas;    a piping unit provided between said chamber and said vaporizing unit; and    a temperature control unit that controls temperature of said piping unit,    wherein said piping unit includes: 
 a first piping connected to said chamber;  
 a second piping connected to said vaporizing unit; and  
 a valve provided between said first piping and said second piping,  
   and wherein said temperature control unit is configured to conduct a temperature control for said valve independently from at least one of temperature controls for said first piping and for said second piping.    
   
   
       2 . The vapor phase deposition apparatus according to  claim 1 , wherein said piping unit further comprises an exhaust unit between said first piping and said second piping, said exhaust unit being capable of exhausting said source gas.  
   
   
       3 . The vapor phase deposition apparatus-according to  claim 2 , wherein said exhaust unit is configured to exhaust said source gas out from said second piping, when said first piping is blocked from said second piping by said valve.  
   
   
       4 . The vapor phase deposition apparatus according to  claim 1 , wherein said temperature control unit is configured to provide independent temperature controls for said first piping, said second piping and said valve.  
   
   
       5 . The vapor phase deposition apparatus according to  claim 1 , wherein said temperature control unit is configured to control temperatures of said first piping, said second piping and said valve at substantially same temperature.  
   
   
       6 . The vapor phase deposition apparatus according to  claim 1 , wherein said temperature control unit is configured to control temperatures of said first piping and said valve at substantially same temperature and to control temperatures of said first piping and of said valve at higher temperature than temperature of said second piping.  
   
   
       7 . The vapor phase deposition apparatus according to  claim 1 , wherein said temperature control unit is configured to control temperature of said first piping at higher temperature than temperature of said valve, and to control temperature of said valve at higher temperature than temperature of said second piping.  
   
   
       8 . The vapor phase deposition apparatus according to  claim 1 , wherein said temperature control unit is configured to control temperature of said valve at a temperature, which is not lower than a vaporizing temperature of said source gas and not higher than a temperature that is higher by 20 degree C. than a decomposition temperature of said source gas.  
   
   
       9 . The vapor phase deposition apparatus according to  claim 1 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       10 . The vapor phase deposition apparatus according to  claim 4 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       11 . The vapor phase deposition apparatus according to  claim 5 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       12 . The vapor phase deposition apparatus according to  claim 6 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       13 . The vapor phase deposition apparatus according to  claim 7 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       14 . The vapor phase deposition apparatus according to  claim 8 , wherein said vapor phase deposition apparatus is configured to conduct an atomic layer deposition by alternately introducing two or more types of gases for deposition sources into the chamber.  
   
   
       15 . The vapor phase deposition apparatus according to  claim 1 , wherein said vaporizing unit is configured to generate a source gas by vaporizing a source containing a chemical compound containing Hf or Zr.  
   
   
       16 . The vapor phase deposition apparatus according to  claim 9 , wherein said vaporizing unit is configured to generate a source gas by vaporizing a source containing a chemical compound containing Hf or Zr.  
   
   
       17 . The vapor phase deposition apparatus according to  claim 14 , wherein said vaporizing unit is configured to generate a source gas by vaporizing a source containing a chemical compound containing Hf or Zr.  
   
   
       18 . The vapor phase deposition apparatus according to  claim 1 , wherein said vaporizing unit is configured to generate a source gas by vaporizing a source containing a chemical compound containing Zr or Hf, N and hydrocarbon group.  
   
   
       19 . A method for forming a thin film by employing said vapor phase deposition apparatus according to  claim 1 , comprising: 
 vaporizing a source material by using said vaporizing unit to generate a source gas;    introducing said source gas from said vaporizing unit into said chamber through said piping unit; and    depositing a thin film from said source gas in said chamber,    wherein said introducing said source gas further comprises controlling temperature of said valve independently from at least one of said first piping and said second piping by using said temperature control unit.    
   
   
       20 . A method for manufacturing a semiconductor device by employing said vapor phase deposition apparatus according to  claim 1 , comprising: 
 vaporizing a source material by using said vaporizing unit to generate a source gas;    introducing said source gas from said vaporizing unit into said chamber through said piping unit; and    depositing a thin film from said source gas onto a semiconductor substrate in said chamber,    wherein said introducing said source gas further comprises controlling temperature of said valve independently from at least one of said first piping and said second piping by using said temperature control unit.