Inventor · disambiguated record
Tomoe Yamamoto
Also filed as: YAMAMOTO TOMOE
12 granted patents·13 pending applications·294 citations·filing 1999–2022
91Inventor score
Files withSUMITOMO SEIKA CHEMICALS6NEC ELECTRONICS CORP5IIZUKA TOSHIHIRO4NEC CORP3RENESAS ELECTRONICS CORP2
Top patents by PatentIndex Score
25 records- 0196US6596602B2Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVDNEC CORP·Filed 2002·Granted Jul 22, 2003·210 cites·8 claims
- 0281US6399399B2Method for manufacturing semiconductor memory and method for manufacturing capacitorNEC CORP·Filed 2001·Granted Jun 4, 2002·28 cites·20 claims
- 0380US7439181B2Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted Oct 21, 2008·3 cites·11 claims
- 0478US6875667B2Method for forming capacitorNEC ELECTRONICS CORP·Filed 2003·Granted Apr 5, 2005·26 cites·16 claims
- 0577US8304021B2Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor deviceYAMAMOTO TOMOE·Filed 2009·Granted Nov 6, 2012·8 cites·19 claims
- 0676US7276444B2Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Oct 2, 2007·2 cites·12 claims
- 0770US8815678B2Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)IIZUKA TOSHIHIRO·Filed 2007·Granted Aug 26, 2014·2 cites·18 claims
- 0869US8169013B2Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)IIZUKA TOSHIHIRO·Filed 2006·Granted May 1, 2012·2 cites·10 claims
- 0965US6518142B2Fabrication method for MIM capacitive circuit having little leakage currentNEC CORP·Filed 2001·Granted Feb 11, 2003·10 cites·4 claims
- 1061US2025303392A1Water-absorbing resin composition, absorber, absorbent article, and method for separation processing of water-absorbing resin particles from absorbent articleSUMITOMO SEIKA CHEMICALS·Filed 2022·Application pending·0 cites
- 1161US2024424473A1Water-absorbent resin composition, absorbent material and absorbent articleSUMITOMO SEIKA CHEMICALS·Filed 2022·Application pending·0 cites
- 1258US2014327064A1Method for fabricating a metal-insulator-metal (mim) capacitor having capacitor dielectric layer formed by atomic layer deposition (ald)RENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1356US2023347318A1Water-absorbing resin composition, absorbent, and absorptive articleSUMITOMO SEIKA CHEMICALS·Filed 2021·Application pending·0 cites
- 1454US8212299B2Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structureIIZUKA TOSHIHIRO·Filed 2002·Granted Jul 3, 2012·3 cites·22 claims
- 1553US2012261735A1Semiconductor device having a thin film capacitor and method for fabricating the sameIIZUKA TOSHIHIRO·Filed 2012·Application pending·0 cites
- 1652US2024109054A1Method for regenerating water-absorbing resin particlesSUMITOMO SEIKA CHEMICALS·Filed 2020·Application pending·0 cites
- 1751US7943475B2Process for manufacturing a semiconductor device comprising a metal-compound filmRENESAS ELECTRONICS CORP·Filed 2006·Granted May 17, 2011·0 cites·12 claims
- 1849US2023182112A1Particulate water-absorbing resin composition, production method therefor, absorbent object, and absorbent articleSUMITOMO SEIKA CHEMICALS·Filed 2021·Application pending·0 cites
- 1944US2005268853A1Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 2043US2005051824A1Semiconductor device having a thin film capacitor and method for fabricating the sameFiled 2004·Application pending·0 cites
- 2142US2021022965A1Water-absorbing exfoliator, method for producing same, and cosmeticSUMITOMO SEIKA CHEMICALS·Filed 2019·Application pending·0 cites
- 2241US7608502B2Method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Oct 27, 2009·0 cites·10 claims
- 2341US2004217478A1Semiconductor device and manufacturing process thereforFiled 2004·Application pending·0 cites
- 2438US2021138434A1Sandbag and method for producing sameSUMITOMO SEIKO CHIMICALS CO LTD·Filed 2019·Application pending·0 cites
- 2528US2002006739A1Method for manufacturing a semiconductor deviceFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →