US2006000551A1PendingUtilityA1

Methods and apparatus for optimal temperature control in a plasma processing system

Assignee: SALDANA MIGUEL APriority: Jun 30, 2004Filed: Jun 30, 2004Published: Jan 5, 2006
Est. expiryJun 30, 2024(expired)· nominal 20-yr term from priority
H10P 72/0421H10P 72/0602H10P 50/242F28D 2021/0077F28F 2013/006F28D 1/06H01J 37/32522H01J 37/321F25B 29/00C23C 16/00C23C 16/52
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Claims

Abstract

A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

Claims

exact text as granted — not AI-modified
1 . A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus comprising: 
 a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus;    a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element;    a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium;    at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus;    a temperature control unit for controlling the heating element and the cooling element; and    a latching mechanism for securing the temperature control device to the upper chamber.    
     
     
         2 . The temperature control device of  claim 1  wherein the thermally conductive body is aluminum.  
     
     
         3 . The temperature control device of  claim 1  wherein the heating element is a kapton etched foil heater.  
     
     
         4 . The temperature control device of  claim 1  wherein the inner most layer of the plurality of thermal interface layers is a thermal contact material such that heat transfer is enhanced.  
     
     
         5 . The temperature control device of  claim 1  wherein at least one layer of the plurality of thermal interface layers is a diffuser such that heat is radially diffused.  
     
     
         6 . The temperature control device of  claim 1  wherein at least one layer of the plurality of thermal interface layers is a thermal barrier.  
     
     
         7 . The temperature control device of  claim 1  further comprising a thermal arrestor such that the temperature control device is protected from ambient conditions.  
     
     
         8 . The temperature control device of  claim 1  wherein the cooling element is configured to receive a constant volumetric flow of fluidic media and wherein the heating element is configured to operate in response to temperature variation within the upper chamber.  
     
     
         9 . The temperature control device of  claim 1  wherein the cooling element is configured to allow adjustment to the volumetric flow of fluidic media in response to temperature variation within the upper chamber and wherein the heating element is configured for constant heat output.  
     
     
         10 . The temperature control device of  claim 1  wherein the cooling element is configured to allow adjustment to the volumetric flow of fluidic media in response to temperature variation within the upper chamber and wherein the heating element is configured to operate in response to temperature variation within the upper chamber.  
     
     
         11 . A temperature agile upper chamber of a plasma apparatus comprising: 
 a continuous sidewall;    a combination heating and cooling band in thermal communication with the continuous sidewall, the heating and cooling comprising a heating element and a cooling element wherein the cooling element of the band is configured to conduct a fluidic medium;    at least one temperature sensor thermally coupled with the upper chamber of the plasma processing apparatus; and    a thermal regulating control unit for controlling the heating element and the cooling element.    
     
     
         12 . The thermally agile upper chamber of a plasma apparatus of  claim 11  wherein the combination heating and cooling band further comprises a plurality of thermal interface layers.  
     
     
         13 . The thermally agile upper chamber of a plasma apparatus of  claim 12  wherein at least one of the plurality of thermal interface layers is a heating element.  
     
     
         14 . The thermally agile upper chamber of a plasma apparatus of  claim 13  wherein the heating element is a kapton etched foil heater.  
     
     
         15 . The thermally agile upper chamber of a plasma apparatus of  claim 14  wherein the cooling element is configured to receive a constant volumetric flow of fluidic media and wherein the heating element is configured to operate in response to temperature variation within the upper chamber.  
     
     
         16 . The thermally agile upper chamber of a plasma apparatus of  claim 11  wherein the cooling element is configured to allow adjustment to the volumetric flow of fluidic media in response to temperature variation within the upper chamber and wherein the heating element is configured for constant heat output.  
     
     
         17 . The thermally agile upper chamber of a plasma apparatus of  claim 11  wherein the cooling element is configured to allow adjustment to the volumetric flow of fluidic media in response to temperature variation within the upper chamber and wherein the heating element is configured to operate in response to temperature variation within the upper chamber.  
     
     
         18 . The thermally agile upper chamber of a plasma apparatus of  claim 15  wherein the fluidic media is water.  
     
     
         19 . A method of using a temperature control device, including a latching mechanism, for controlling the temperature of an upper chamber of a plasma processing apparatus comprising: 
 providing a combination heating and cooling band wherein the cooling portion of the band is configured to conduct fluidic flow having a constant temperature;    adjusting the volume of the fluidic flow in response to temperature variation within the upper chamber; and    adjusting the heat output of the heating element in response to temperature variation within the upper chamber.    
     
     
         20 . A method of using a temperature control device of  claim 19  wherein the volume of the fluidic flow is constant.  
     
     
         21 . A method of using a temperature control device of  claim 19  wherein the heat output is constant.

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