Semiconductor device packages including hermetic packaging elements for at least partially encapsulating conductive elements and other package elements for protecting the portions of semiconductor devices not covered by the hermetic package elements, and packaging methods

Abstract

A semiconductor device package includes a semiconductor device and at least one conductive element in communication with a contact of the semiconductor device. A hermetic package element encapsulates at least a portion of the conductive element and the contact from which the conductive element protrudes or extends. Another element of the package encapsulates the remainder of the semiconductor device. The conductive element may comprise an intermediate conductive element, such as a bond wire, a discrete conductive element, such as a solder structure, or leads. One or both of the hermetic package element and the other element of the package may include a plurality of adjacent, mutually adhered regions, as are formed by programmed material consolidation processes. Packaging methods are also disclosed.

1 . A semiconductor device, comprising: 
 at least one semiconductor device;    at least one conductive element extending or protruding from at least one contact of the at least one semiconductor device;    a hermetic package element surrounding and sealed against at least a portion of the at least one conductive element; and    another package element protecting a portion of the at least one semiconductor device exposed beyond the hermetic package element.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the another package element comprises substantially hermetic material.  
   
   
       3 . The semiconductor device of  claim 2 , wherein the another package element hermetically seals the at least one semiconductor device and the hermetic package element.  
   
   
       4 . The semiconductor device of  claim 1 , further comprising: 
 a carrier.    
   
   
       5 . The semiconductor device of  claim 4 , wherein the carrier comprises a carrier substrate.  
   
   
       6 . The semiconductor device of  claim 4 , wherein the carrier comprises leads.  
   
   
       7 . The semiconductor device of  claim 6 , wherein the at least one conductive element comprises at least one lead of the leads.  
   
   
       8 . The semiconductor device of  claim 7 , wherein an external portion of the at least one lead protrudes from the hermetic package element.  
   
   
       9 . The semiconductor device of  claim 6 , wherein the another package element encapsulates at least a portion each lead of the plurality of leads.  
   
   
       10 . The semiconductor device of  claim 4 , wherein the at least one conductive element comprises an intermediate conductive element or a discrete conductive element extending between a bond pad of the at least one semiconductor device and a corresponding contact of the carrier.  
   
   
       11 . The semiconductor device of  claim 10 , wherein the hermetic package element completely encapsulates the intermediate conductive element.  
   
   
       12 . The semiconductor device of  claim 1 , wherein the hermetic package element comprises a plurality of adjacent, mutually adhered regions comprising substantially hermetic material.  
   
   
       13 . The semiconductor device of  claim 12 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.  
   
   
       14 . The semiconductor device of  claim 1 , wherein the another package element comprises a plurality of adjacent, mutually adhered regions.  
   
   
       15 . The semiconductor device of  claim 14 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.  
   
   
       16 . The semiconductor device of  claim 1 , wherein the another package element encapsulates the hermetic package element.  
   
   
       17 . The semiconductor device of  claim 1 , further comprising: 
 a dielectric element electrically isolating the at least one conductive element from at least one of the hermetic package element and the another package element.    
   
   
       18 . A method for packaging a semiconductor device assembly, comprising: 
 forming a hermetic package element that encapsulates and seals against at least a portion of at least one contact of at least one semiconductor device and at least one conductive element extending or protruding from the at least one contact;    forming another package element around a portion of the at least one semiconductor device exposed beyond the hermetic package element.    
   
   
       19 . The method of  claim 18 , wherein forming the hermetic package element comprises at least partially consolidating unconsolidated, substantially hermetic material.  
   
   
       20 . The method of  claim 19 , wherein at least partially consolidating comprises employing a programmed material consolidation process.  
   
   
       21 . The method of  claim 19 , wherein at least partially consolidating comprises sequentially forming a plurality of adjacent, mutually adhered regions of the hermetic package element from the unconsolidated, substantially hermetic material.  
   
   
       22 . The method of  claim 21 , wherein at least partially consolidating comprises sequentially forming a plurality of at least partially superimposed, contiguous, mutually adhered layers of the hermetic package element from the unconsolidated, substantially hermetic material.  
   
   
       23 . The method of  claim 18 , wherein forming the another package element comprises at least partially consolidating unconsolidated material.  
   
   
       24 . The method of  claim 23 , wherein consolidating comprises employing a programmed material consolidation process.  
   
   
       25 . The method of  claim 23 , wherein at least partially consolidating comprises sequentially forming a plurality of adjacent, mutually adhered regions of the hermetic package element from the unconsolidated, substantially hermetic material.  
   
   
       26 . The method of  claim 25 , wherein at least partially consolidating comprises sequentially forming a plurality of at least partially superimposed, contiguous, mutually adhered layers of the hermetic package element from the unconsolidated, substantially hermetic material.  
   
   
       27 . The method of  claim 23 , wherein at least partially consolidating unconsolidated material comprises at least partially consolidating unconsolidated, substantially hermetic material.  
   
   
       28 . The method of  claim 18 , wherein forming the hermetic package element comprises encapsulating the at least one conductive element.  
   
   
       29 . The method of  claim 28 , wherein encapsulating the at least one conductive element comprises encapsulating at least one intermediate conductive element or at least one discrete conductive element.  
   
   
       30 . The method of  claim 18 , wherein forming the hermetic package element comprises encapsulating a portion of the at least one conductive element, a remainder of the at least one conductive element protruding from the hermetic package element.  
   
   
       31 . The method of  claim 30 , wherein encapsulating a portion of the at least one conductive element comprises encapsulating a portion of at least one lead.  
   
   
       32 . The method of  claim 18 , wherein forming the another package element comprises encapsulating the hermetic package element.  
   
   
       33 . The method of  claim 18 , further comprising: 
 electrically isolating the at least one conductive element from at least one of the hermetic package element and the another package element.