Method of recycling fluorine using an adsorption purification process
Abstract
A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.
Claims
exact text as granted — not AI-modified1 - 16 . (canceled)
17 . A method for cleaning impurities from an inner surface of a reaction chamber comprising the steps of:
providing a process chamber having impurities on an interior surface; directing a flow of a fluorine-containing compound to the process chamber from a fluorine-containing source; dissociating the fluorine from the fluorine-containing compound, said fluorine associating with the impurities on the interior surface of the process chamber; directing the fluorine and impurities from the process chamber to a purification chamber, said cleaning chamber containing an amount of adsorbent; adsorbing the impurities onto the adsorbent producing purified fluorine; directing the purified fluorine from the purification chamber to the process chamber, said fluorine from the purification chamber supplementing the fluorine-containing source.
18 . The method according to claim 17 , wherein the fluorine-containing compound comprises nitrogen trifluoride.
19 . The method according to claim 17 , wherein the step of directing the fluorine from the purification chamber to the process chamber further comprises directing the fluorine to a storage tank.
20 . The method according to claim 17 , wherein the impurities comprise silicon-containing impurities.
21 . The method according to claim 20 , wherein the impurities comprise SiF 4 .
22 - 52 . (canceled)
53 . A method for cleaning impurities from an inner surface of a process chamber comprising the steps of:
providing a process chamber having impurities on an interior surface; directing a flow of a fluorine-containing compound to the process chamber from a fluorine-containing source, said fluorine-containing source at least partially produced by providing a contained fluorine precursor source located proximate to an adsorbent bed in a replaceable unit; providing an electrolytic cell comprising an electrode, said cell charged with an amount of electrolyte; providing a power supply and directing current from said power supply to the electrolytic cell; directing the fluorine precursor to the electrolytic cell; collecting an amount of impure fluorine from the electrolyte of the electrolytic cell to the adsorbent bed; adsorbing impurities from the impure fluorine on adsorbent in the adsorbent bed; and directing purified fluorine from the adsorbent bed to the process chamber; dissociating the fluorine from the fluorine-containing compound, said fluorine associating with the impurities on the interior surface of the process chamber; directing the fluorine and impurities from the process chamber to a purification chamber, said purification chamber containing an amount of adsorbent; adsorbing the impurities onto the adsorbent; directing the purified fluorine from the purification chamber to the process chamber, said fluorine from the purification chamber supplementing the fluorine-containing source.
54 . The method according to claim 53 , wherein the fluorine-containing compound comprises nitrogen trifluoride.
55 . The method according to claim 53 , wherein the step of directing the fluorine from the purification chamber to the process chamber further comprises directing the fluorine to a storage tank.
56 . The method according to claim 53 , wherein the impurities comprise silicon-containing impurities.
57 - 116 . (canceled)Join the waitlist — get patent alerts
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