Low melting-point solders, articles made thereby, and processes of making same

Abstract

A composition includes a tin-containing solder with a melting temperature below about 150° C. The tin-containing solder includes indium, tin, and bismuth as alloy elements, and optionally contains a doping material and/or a second-phase dispersiod. A process includes blending the tin-containing solder under non-alloying conditions to achieve the discrete dispersion of the doping material. A process also includes blending the tin-containing solder with the particulate to achieve the discrete dispersion of the particulate. The composition is also combined with a microelectronic device to form a package. The composition is also combined with a microelectronic device and at least one I/O functionality to form a computing system.

1 . A composition comprising: 
 indium in a range from about 36% to about 63%;    tin in a range from about 28% to about 48%; and    bismuth in a range from about 2% to about 26%.    
     
     
         2 . The composition of  claim 1 , wherein the composition includes a solder including: 
 indium in a range of about 41% to about 58%;    tin in a range from about 34% to about 42%; and    bismuth in a range from about 7% to about 19%.    
     
     
         3 . The composition of  claim 1 , wherein the composition includes a solder including: 
 indium in a range from about 46% to about 53%;    tin in a range from about 37% to about 39%; and    bismuth in a range from about 12% to about 14%.    
     
     
         4 . The composition of  claim 1 , wherein the composition includes a solder including: 
 about 49% indium;    about 38% tin;    and about 13% bismuth.    
     
     
         5 . The composition of  claim 1 , further including: 
 at least one doping material selected from zinc, titanium, zirconium, hafnium, yttrium, ytterbium, lanthanum, praseodymium, nickel, palladium, platinum, cobalt, rhodium, iridium, magnesium, manganese, iron, copper, silver, gold, and combinations thereof.    
     
     
         6 . The composition of  claim 1 , further including a zinc doping material in a concentration range from about 0.1% to about 1%.  
     
     
         7 . The composition of  claim 1 , further including doping materials of at least two selected from zinc, silver, and copper, wherein the doping materials are present in a combined concentration range from about 0.1% to about 1%.  
     
     
         8 . The composition of  claim 1 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, and wherein the particulate has a size in a range below about 100 nm.    
     
     
         9 . The composition of  claim 1 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm, and wherein the particulate occupies a volume in the composition in a range from about 0.1% to about 50%.    
     
     
         10 . The composition of  claim 1 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm; and    wherein the particulate is selected from an oxide, a carbide, a nitride, an oxynitride, a silicide, a carbon Fullerene, and combinations thereof.    
     
     
         11 . The composition of  claim 1 , further including: 
 at least one doping material selected from zinc, titanium, yttrium, ytterbium, zirconium, nickel, cobalt, lanthanum, magnesium, manganese, iron, copper, silver, gold, palladium, praseodymium, and combinations thereof; and    a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm, and wherein the particulate occupies a volume in the composition in a range from about 0.1% to about 50%.    
     
     
         12 . A composition comprising: 
 bismuth in a range from about 42% to about 62%;    tin in a range from about 19% to about 42%; and    indium in a range from about 7% to about 28%.    
     
     
         13 . The composition of  claim 12 , wherein the composition includes a solder including: 
 bismuth in a range from about 46% to about 57%;    tin in a range from about 24% to about 38%; and    indium in a range from about 11% to about 24%.    
     
     
         14 . The composition of  claim 12 , wherein the composition includes a solder including: 
 bismuth in a range from about 52% to about 54%;    tin in a range from about 29% to about 33%; and    indium in a range from about 15% to about 19%.    
     
     
         15 . The composition of  claim 12 , wherein the composition includes a solder including: 
 about 52% bismuth;    about 31% tin; and about 17% indium.    
     
     
         16 . The composition of  claim 12 , further including: 
 at least one doping material selected from zinc, titanium, zirconium, hafnium, yttrium, ytterbium, lanthanum, praseodymium, nickel, palladium, platinum, cobalt, rhodium, iridium, magnesium, manganese, iron, copper, silver, gold, and combinations thereof.    
     
     
         17 . The composition of  claim 12 , further including a zinc doping material in a concentration range from about 0.1% to about 1%.  
     
     
         18 . The composition of  claim 12 , further including doping materials of at least two selected from zinc, silver, antimony, and copper, wherein the doping materials are present in a combined concentration range from about 0.1% to about 1%.  
     
     
         19 . The composition of  claim 12 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, and wherein the particulate has a size in a range below about 100 nm.    
     
     
         20 . The composition of  claim 12 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm, and wherein the particulate occupies a volume in the composition in a range from about 0.1% to about 50%.    
     
     
         21 . The composition of  claim 12 , further including: 
 a particulate dispersed in the composition, wherein the solder provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm; and    wherein the particulate is selected from an oxide, a carbide, a nitride, an oxynitride, a silicide, a carbon Fullerene, and combinations thereof.    
     
     
         22 . The composition of  claim 12 , further including: 
 at least one doping material selected from zinc, titanium, yttrium, ytterbium, zirconium, nickel, cobalt, lanthanum, magnesium, manganese, iron, copper, silver, gold, palladium, praseodymium, and combinations thereof; and    a particulate dispersed in the composition, wherein the composition provides a matrix for the particulate, wherein the particulate has a size in a range below about 100 nm, and wherein the particulate occupies a volume in the composition in a range from about 0.1% to about 50%.    
     
     
         23 . A composition comprising: 
 from about 33% to about 67% indium;    from about 32% to about 67% bismuth; and    from about 0% to about 20% tin.    
     
     
         24 . The composition of  claim 23 , wherein the composition includes a solder including: 
 indium in a range of about 25% to about 33%;    tin in a range from about 0% to about 19%; and    bismuth in a range from about 56% to about 67%.    
     
     
         25 . The composition of  claim 23 , wherein the composition includes a solder including: 
 indium in a range from about 48% to about 67%;    tin in a range from about 0% to about 20%; and    bismuth in a range from about 32% to about 33%.    
     
     
         26 . A composition comprising: 
 from about 52% to about 54% indium;    from about 0% to about 2% zinc; and    from about 46% to about 48% tin.    
     
     
         27 . The composition of  claim 26 , wherein the composition includes a solder including: 
 indium in a range of about 52.5% to about 53.5%;    zinc in a range from about 0.5% to about 1.5%; and    tin in a range from about 46.5% to about 47.5%.    
     
     
         28 . The composition of  claim 26 , wherein the composition includes a solder including: 
 about 53% indium;    about 1% zinc; and    about 47% tin.    
     
     
         29 . A composition comprising: 
 from about 33% to about 67% indium;    from about 32% to about 67% bismuth; and    from about 0.1% to about 1% zinc.    
     
     
         30 . The composition of  claim 29 , wherein the composition includes a solder including: 
 from about 32% to about 33% indium;    from about 66% to about 67% bismuth; and    from about 0.1% to about 1% zinc.    
     
     
         31 . The composition of  claim 29 , wherein the composition includes a solder including: 
 from about 33.4% to about 52.2% indium;    from about 47.4% to about 66.3% bismuth; and    from about 0.3% to about 0.4% zinc.    
     
     
         32 . The composition of  claim 29 , wherein the composition includes a solder including: 
 from about 52.2% to about 66.8% indium;    from about 32.7% to about 47.4% bismuth; and    from about 0.4% to about 0.5% zinc.    
     
     
         33 . The composition of  claim 29 , wherein the composition includes a solder including: 
 from about 66% to about 66.8% indium;    from about 32.7% to about 34% bismuth; and    from about 0.1% to about 0.5% zinc.    
     
     
         34 . A package comprising: 
 a substrate;    a solder composition, selected from: 
 a first solder including: 
 indium in a range from about 36% to about 63%;  
 tin in a range from about 28% to about 48%; and  
 bismuth in a range from about 2% to about 26; and  
 the solution, mixture, and reaction products of the first solder; or  
 
 a second solder including: 
 bismuth in a range from about 42% to about 62%;  
 tin in a range from about 19% to about 42%;  
 indium in a range from about 7% to about 28%; and  
 the solution, mixture, and reaction products of the first solder; and  
 
   a microelectronic device disposed on the substrate, wherein the microelectronic device is coupled to the solder.    
     
     
         35 . The package of  claim 34 , wherein the microelectronic device is a flip-chip die, and wherein the solder is selected from a thermal interface subsystem, an electrical bump, and combinations thereof.  
     
     
         36 . The package of  claim 34 , wherein the microelectronic device is a flip-chip die, and wherein the solder is selected from a first electrical bump that contacts a die, a second electrical bump that contacts a board and that is coupled to the die, and combinations thereof.  
     
     
         37 . The package of  claim 34 , wherein the microelectronic device is a wire-bond die, and wherein the solder is selected from a wire-bonding ball, an interconnect, a bump to a board, and combinations thereof.  
     
     
         38 . A computing system comprising: 
 a substrate;    a solder composition, selected from: 
 a first solder including: 
 indium in a range from about 36% to about 63%;  
 tin in a range from about 28% to about 48%;  
 bismuth in a range from about 2% to about 26%; and  
 the solution, mixture, and reaction products of the first solder; or  
 
 a second solder including: 
 bismuth in a range from about 42% to about 62%;  
 tin in a range from about 19% to about 42%;  
 indium in a range from about 7% to about 28%; and  
 the solution, mixture, and reaction products of the first solder;  
 
   a microelectronic device disposed on the substrate; and    at least one of an input device and an output device coupled to the microelectronic device, wherein the solder is coupled to the microelectronic device.    
     
     
         39 . The computing system of  claim 38 , wherein the computing system is disposed in one of a computer, a wireless communicator, a hand-held device, an automobile, a locomotive, an aircraft, a watercraft, and a spacecraft.  
     
     
         40 . The computing system of  claim 38 , wherein the microelectronic die is selected from a data storage device, a digital signal processor, a micro controller, an application specific integrated circuit, and a microprocessor.  
     
     
         41 . A process comprising: 
 assembling a solder with a structure, the solder including: 
 indium in a range from about 36% to about 63%;  
 tin in a range from about 28% to about 48%; and  
 bismuth in a range from about 2% to about 26%.  
   
     
     
         42 . The process of  claim 41 , before assembling, the process further including blending the solder with at least one of a second-phase particulate and a doping material.  
     
     
         43 . The process of  claim 41 , wherein blending the second-phase particulate includes first milling the second-phase particulate to a particle size about 100% passing 100 nm, followed by second kneading the second-phase particulate into the solder.  
     
     
         44 . The process of  claim 41 , wherein blending the second-phase particulate includes first kneading the second-phase particulate into the solder.  
     
     
         45 . The process of  claim 41 , before assembling, the process further including: 
 blending the solder with a doping material; and    wherein assembling the solder with a structure includes in situ alloying of the doping material during reflow of the solder against the structure, wherein the structure is selected from a heat sink, a die, a bump, a wire-bond pad, and combinations thereof.    
     
     
         46 . A process comprising: 
 assembling the solder with a structure, the solder including: 
 indium in a range from about 69% to about 97%;  
 tin in a range from about 28% to about 48%; and  
 bismuth in a range from about 2% to about 26%.  
   
     
     
         47 . The process of  claim 46 , before assembling, the process further including blending the solder with at least one of a second-phase particulate and a doping material.  
     
     
         48 . The process of  claim 46 , wherein blending the second-phase particulate includes first milling the second-phase particulate to a particle size about 100% passing 100 nm, followed by second kneading the second-phase particulate into the solder.  
     
     
         49 . The process of  claim 46 , wherein blending the second-phase particulate includes first kneading the second-phase particulate into the solder.  
     
     
         50 . The process of  claim 46 , before assembling, the process further including: 
 blending the solder with a doping material; and    wherein assembling the solder with a structure includes in situ alloying of the doping material during reflow of the solder against the structure, wherein the structure is selected from a heat sink, a die, a bump, a wire-bond pad, and combinations thereof.