US2006110846A1PendingUtilityA1

Electrically programmable memory element with improved contacts

Assignee: LOWREY TYLERPriority: Oct 1, 1997Filed: Nov 28, 2005Published: May 25, 2006
Est. expiryOct 1, 2017(expired)· nominal 20-yr term from priority
G11C 11/56G11C 13/0004G11C 11/5678H10N 70/826H10N 70/011H10N 70/8828H10N 70/063H10N 70/821H10B 63/82H10N 70/231H10N 70/8413H10B 63/30
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Claims

Abstract

A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.

Claims

exact text as granted — not AI-modified
1 . A method of making an electrically programmable memory element, comprising: 
 forming a conductive sidewall spacer; and    forming a phase-change material in electrical communication with said conductive sidewall spacer.    
     
     
         2 . The method of  claim 1 , wherein said phase-change material comprises a chalcogen element.

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