US2006110846A1PendingUtilityA1
Electrically programmable memory element with improved contacts
Est. expiryOct 1, 2017(expired)· nominal 20-yr term from priority
Inventors:Tyler LowreyStanford R. OvshinskyGuy WickerPatrick KlersyBoil PashmakovWolodymyr CzubatyjSergey Kostylev
G11C 11/56G11C 13/0004G11C 11/5678H10N 70/826H10N 70/011H10N 70/8828H10N 70/063H10N 70/821H10B 63/82H10N 70/231H10N 70/8413H10B 63/30
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Claims
Abstract
A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
Claims
exact text as granted — not AI-modified1 . A method of making an electrically programmable memory element, comprising:
forming a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
2 . The method of claim 1 , wherein said phase-change material comprises a chalcogen element.Join the waitlist — get patent alerts
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