Inventor · disambiguated record
Patrick Klersy
Also filed as: KLERSY PATRICK · KLERSY PATRICK J
30 granted patents·5 pending applications·7,674 citations·filing 1987–2010
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US6674115B2Multiple layer phrase-change memoryINTEL CORP·Filed 2002·Granted Jan 6, 2004·490 cites·4 claims
- 0299US6617192B1Electrically programmable memory element with multi-regioned contactOVONYX INC·Filed 2000·Granted Sep 9, 2003·345 cites·11 claims
- 0399US6555860B2Compositionally modified resistive electrodeINTEL CORP·Filed 2001·Granted Apr 29, 2003·636 cites·33 claims
- 0499US6507061B1Multiple layer phase-change memoryINTEL CORP·Filed 2001·Granted Jan 14, 2003·496 cites·27 claims
- 0599US5933365AMemory element with energy control mechanismENERGY CONVERSION DEVICES INC·Filed 1997·Granted Aug 3, 1999·585 cites·65 claims
- 0699US5825046AComposite memory material comprising a mixture of phase-change memory material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1996·Granted Oct 20, 1998·580 cites·14 claims
- 0798US7023009B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Apr 4, 2006·259 cites·25 claims
- 0898US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 0998US6943365B2Electrically programmable memory element with reduced area of contact and method for making sameOVONYX INC·Filed 2001·Granted Sep 13, 2005·145 cites·3 claims
- 1098US6797979B2Metal structure for a phase-change memory deviceINTEL CORP·Filed 2003·Granted Sep 28, 2004·294 cites·62 claims
- 1198US6750079B2Method for making programmable resistance memory elementOVONYX INC·Filed 2001·Granted Jun 15, 2004·202 cites·42 claims
- 1298US6613604B2Method for making small pore for use in programmable resistance memory elementOVONYX INC·Filed 2001·Granted Sep 2, 2003·534 cites·12 claims
- 1398US6569705B2Metal structure for a phase-change memory deviceINTEL CORP·Filed 2000·Granted May 27, 2003·345 cites·14 claims
- 1497US7833823B2Programmable resistance memory element and method for making sameOVONYX INC·Filed 2008·Granted Nov 16, 2010·77 cites·24 claims
- 1597US6087674AMemory element with memory material comprising phase-change material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1998·Granted Jul 11, 2000·843 cites·15 claims
- 1697US5177567AThin-film structure for chalcogenide electrical switching devices and process thereforENERGY CONVERSION DEVICES INC·Filed 1991·Granted Jan 5, 1993·941 cites·19 claims
- 1796US6075719AMethod of programming phase-change memory elementENERGY CONVERSION DEVICES INC·Filed 1999·Granted Jun 13, 2000·179 cites·18 claims
- 1895US7253429B2Electrically programmable memory elementOVONYX INC·Filed 2004·Granted Aug 7, 2007·83 cites·8 claims
- 1995US6998289B2Multiple layer phase-change memoryINTEL CORP·Filed 2002·Granted Feb 14, 2006·80 cites·14 claims
- 2094US7092286B2Electrically programmable memory element with reduced area of contactOVONYX INC·Filed 2005·Granted Aug 15, 2006·26 cites·30 claims
- 2194US4804490AMethod of fabricating stabilized threshold switching materialENERGY CONVERSION DEVICES INC·Filed 1987·Granted Feb 14, 1989·143 cites·10 claims
- 2293US6872963B2Programmable resistance memory element with layered memory materialOVONYX INC·Filed 2002·Granted Mar 29, 2005·61 cites·25 claims
- 2388US5330630ASwitch with improved threshold voltageENERGY CONVERSION DEVICES INC·Filed 1991·Granted Jul 19, 1994·50 cites·18 claims
- 2487US6815705B2Electrically programmable memory element with raised poreOVONYX INC·Filed 2001·Granted Nov 9, 2004·34 cites·12 claims
- 2576US6764897B2Method of making programmable resistance memory elementOVONYX INC·Filed 2003·Granted Jul 20, 2004·17 cites·4 claims
- 2666US7473574B2Memory element with improved contactsOVONYX INC·Filed 2006·Granted Jan 6, 2009·2 cites·3 claims
- 2766US6927093B2Method for making programmable resistance memory elementOVONYX INC·Filed 2004·Granted Aug 9, 2005·12 cites·32 claims
- 2863US7576350B2Programmable resistance memory element with multi-regioned contactOVONYX INC·Filed 2004·Granted Aug 18, 2009·9 cites·16 claims
- 2963US7407829B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Aug 5, 2008·9 cites·64 claims
- 3049US8089059B2Programmable resistance memory elementKLERSY PATRICK·Filed 2010·Granted Jan 3, 2012·1 cites·27 claims
- 3147US2009057645A1Memory element with improved contactsKOSTYLEV SERGEY A·Filed 2008·Application pending·0 cites
- 3241US2006274575A1Electrically programmable memory element with reduced area of contactLOWREY TYLER·Filed 2006·Application pending·0 cites
- 3340US2005201136A1Electrically programmable memory element with reduced area of contact and method for making sameFiled 2005·Application pending·0 cites
- 3439US2006110846A1Electrically programmable memory element with improved contactsLOWREY TYLER·Filed 2005·Application pending·0 cites
- 3534US2003075778A1Programmable resistance memory element and method for making sameFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →