Electrically programmable memory element with reduced area of contact

Abstract

A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the memory element may include a chalcogenide material.

1 . An electrically operated memory element, comprising: 
 a conductive layer; and    a programmable resistance material in electrical communication with said conductive layer wherein the total area of contact between said programmable resistance material and said conductive layer is less than 250,000 square Angstroms.    
     
     
         2 . The memory element of  claim 1 , wherein said area of contact has a first dimension in a first direction which is less than 500 Angstroms and a second dimension in a second direction which is less than 500 Angstroms.  
     
     
         3 . The memory element of  claim 2 , wherein said first direction is substantially perpendicular to said second direction.  
     
     
         4 . The memory element of  claim 1 , wherein said total area of contact is less than 150,000 square Angstroms.  
     
     
         5 . The memory element of  claim 1 , wherein said programmable resistance material is electrically coupled to a top surface of said conductive layer.  
     
     
         6 . The memory element of  claim 1 , wherein programmable resistance material is a phase-change material.  
     
     
         7 . The memory element of  claim 1 , wherein said programmable resistance material comprises a chalcogen element.