Resin bond grindstone and method of manufacturing a semiconductor chip using the grindstone

Abstract

The present invention provides a resin bond grindstone and method of manufacturing a semiconductor chip using the grindstone that provide a semiconductor device with high reliability even when a thickness of the semiconductor chip is thinned, and specifically provides followings: [1] A resin bond grindstone which comprises grains coated with at least one magnetic metal selected from a group consisting of cobalt, iron, manganese, chromium, vanadium and alloys thereof, and a resin, where the grains coated with the magnetic metal are dispersed in the resin; and [2] A method of manufacturing a semiconductor chip including a step of grinding a semiconductor wafer using the resin bond grindstone as described in above item [1] and a step of dicing the ground semiconductor wafer.

1 . A resin bond grindstone comprising: 
 grains coated with at least one magnetic metal selected from a group consisting of cobalt, iron, manganese, chromium, vanadium and alloys thereof; and    a resin,    wherein the grains coated with the magnetic metal are dispersed in the resin.    
   
   
       2 . A semiconductor wafer grinding apparatus which is an apparatus to grind a semiconductor wafer, comprising: 
 a base to which a resin bond grindstone is fixed with an adhesive containing magnetic metal;    means for rotating at least one of the base and a semiconductor wafer; and    means for bringing the resin bond grindstone provided on the base and the semiconductor wafer into contact with each other,    wherein the resin bond grindstone is the resin bond grindstone according to  claim 1 , and the magnetic metal contained in the adhesive is at least one selected from a group consisting of cobalt, iron, manganese, chromium, vanadium and alloys thereof.    
   
   
       3 . A method of manufacturing a semiconductor wafer with a thickness ranging from 50 to 300 μm, wherein the method includes a step of grinding the semiconductor wafer using the semiconductor wafer grinding apparatus according to  claim 2 .  
   
   
       4 . A method of manufacturing a semiconductor chip, wherein the method includes a step of dicing a semiconductor wafer obtained by the method according to  claim 3 .  
   
   
       5 . A semiconductor device provided with a semiconductor chip obtained by the method according to  claim 4 .  
   
   
       6 . An adhesive for a resin bond grindstone, wherein the adhesive contains magnetic metal that is at least one selected from a group consisting of cobalt, iron, manganese, chromium, vanadium and alloys thereof.