Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method

Abstract

The invention provides an adhesive sheet which can be stuck to a wafer at low temperatures of 100° C. or below, which is soft to the extent that it can be handled at room temperature, and which can be cut simultaneously with a wafer under usual cutting conditions; a dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet and a dicing tape; and a method of producing a semiconductor device using them. In order to achieve this object, the invention is characterized by specifying the breaking strength, breaking elongation, and elastic modulus of the adhesive sheet in particular numerical ranges.

1 . An adhesive sheet, comprising a polymer component, 
 the breaking strength of the adhesive sheet in a B-stage state being from 0.1 to 10 MPa at 25° C., and the breaking elongation thereof being from 1 to 40% at 25° C.    
     
     
         2 . An adhesive sheet, comprising a polymer component, 
 the elastic modulus of the adhesive sheet in a B-stage state being from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus thereof being from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 900 Hz.    
     
     
         3 . An adhesive sheet, comprising a polymer component, 
 the elastic modulus of the adhesive sheet in a B-stage state being from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus thereof being from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at −20° C. and 10 Hz.    
     
     
         4 . The adhesive sheet according to  claim 2 , comprising the polymer component, and 
 the elastic modulus of the adhesive sheet in a B-stage state being from 0.1 to 20 MPa in measurement of the dynamic viscoelasticity at 60° C. and 10 Hz.    
     
     
         5 . The adhesive sheet according to  claim 2 , comprising the polymer component, 
 the breaking strength of the adhesive sheet in a B-stage state being from 0.1 to 10 MPa at 25° C., and the breaking elongation thereof being from 1 to 40% at 25° C.    
     
     
         6 . The adhesive sheet according to  claim 1 , wherein the polymer component has a glass transition temperature of −30 to 50° C., and a weight-average molecular weight of 50000 to 1000000.  
     
     
         7 . The adhesive sheet according to  claim 6 , wherein the polymer component, which has a glass transition temperature of −30 to 50° C. and a weight-average molecular weight of 50000 to 1000000, is contained in an amount of 50% or less of the total weight of the adhesive sheet from which the weight of a filler is removed.  
     
     
         8 . The adhesive sheet according to  claim 7 , further comprising a thermosetting component.  
     
     
         9 . The adhesive sheet according to  claim 7 , further comprising 5 to 70% by weight of the filler.  
     
     
         10 . The adhesive sheet according to  claim 1 , wherein the content of remaining volatile matters is from 0.01 to 3% by weight.  
     
     
         11 . The adhesive sheet according to  claim 1 , which has a film thickness of 1 to 250 μm.  
     
     
         12 . A dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet according to  claim 1  and a dicing tape.  
     
     
         13 . A method of producing a semiconductor device, comprising: 
 I) the step of sticking the adhesive sheet according to  claim 1  onto a semiconductor wafer,    II) the step of rendering the semiconductor wafer permissible to be cut,    III) the step of sticking a dicing tape onto the adhesive sheet in order of I-II-III, II-I-III, or I-III-II, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         14 . A method of producing a semiconductor device, comprising: 
 I′) the step of sticking the dicing tape integrated type adhesive sheet according to  claim 12  onto a semiconductor wafer, and    II) the step of rendering the semiconductor wafer permissible to be cut in order of I′-II or II-I′, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet of the dicing tape integrated type adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         15 . The method of producing a semiconductor device according to  claim 13 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.  
     
     
         16 . The adhesive sheet according to  claim 3 , comprising the polymer component, and 
 the elastic modulus of the adhesive sheet in a B-stage state being from 0.1 to 20 MPa in measurement of the dynamic viscoelasticity at 60° C. and 10 Hz.    
     
     
         17 . The adhesive sheet according to  claim 3 , comprising the polymer component, 
 the breaking strength of the adhesive sheet in a B-stage state being from 0.1 to 10 MPa at 25° C., and the breaking elongation thereof being from 1 to 40% at 25° C.    
     
     
         18 . The adhesive sheet according to  claim 2 , wherein the polymer component has a glass transition temperature of −30 to 50° C., and a weight-average molecular weight of 50000 to 1000000.  
     
     
         19 . The adhesive sheet according to  claim 18 , wherein the polymer component, which has a glass transition temperature of −30 to 50° C. and a weight-average molecular weight of 50000 to 1000000, is contained in an amount of 50% or less of the total weight of the adhesive sheet from which the weight of a filler is removed.  
     
     
         20 . The adhesive sheet according to  claim 19 , further comprising a thermosetting component.  
     
     
         21 . The adhesive sheet according to  claim 20 , further comprising 5 to 70% by weight of the filler.  
     
     
         22 . The adhesive sheet according to  claim 3 , wherein the polymer component has a glass transition temperature of −30 to 50° C., and a weight-average molecular weight of 50000 to 1000000.  
     
     
         23 . The adhesive sheet according to  claim 22 , wherein the polymer component, which has a glass transition temperature of −30 to 50° C. and a weight-average molecular weight of 50000 to 1000000, is contained in an amount of 50% or less of the total weight of the adhesive sheet from which the weight of a filler is removed.  
     
     
         24 . The adhesive sheet according to  claim 23 , further comprising a thermosetting component.  
     
     
         25 . The adhesive sheet according to  claim 24 , further comprising 5 to 70% by weight of the filler.  
     
     
         26 . The adhesive sheet according to  claim 2 , wherein the content of remaining volatile matters is from 0.01 to 3% by weight.  
     
     
         27 . The adhesive sheet according to  claim 3 , wherein the content of remaining volatile matters is from 0.01 to 3% by weight.  
     
     
         28 . The adhesive sheet according to  claim 2 , which has a film thickness of 1 to 250 μm.  
     
     
         29 . The adhesive sheet according to  claim 3 , which has a film thickness of 1 to 250 μm.  
     
     
         30 . A dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet according to  claim 2  and a dicing tape.  
     
     
         31 . A dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet according to  claim 3  and a dicing tape.  
     
     
         32 . A method of producing a semiconductor device, comprising: 
 I) the step of sticking the adhesive sheet according to  claim 2  onto a semiconductor wafer,    II) the step of rendering the semiconductor wafer permissible to be cut,    III) the step of sticking a dicing tape onto the adhesive sheet in order of I-II-III, II-I-III, or I-III-II, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         33 . The method of producing a semiconductor device according to  claim 32 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.  
     
     
         34 . A method of producing a semiconductor device, comprising: 
 I) the step of sticking the adhesive sheet according to  claim 3  onto a semiconductor wafer,    II) the step of rendering the semiconductor wafer permissible to be cut,    III) the step of sticking a dicing tape onto the adhesive sheet in order of I-II-III, II-I-III, or I-III-II, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         35 . The method of producing a semiconductor device according to  claim 34 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.  
     
     
         36 . The method of producing a semiconductor device according to  claim 14 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.  
     
     
         37 . A method of producing a semiconductor device, comprising: 
 I′) the step of sticking the dicing tape integrated type adhesive sheet according to  claim 30  onto a semiconductor wafer, and    II) the step of rendering the semiconductor wafer permissible to be cut in order of I′-II or II-I′, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet of the dicing tape integrated type adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         38 . The method of producing a semiconductor device according to  claim 37 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.  
     
     
         39 . A method of producing a semiconductor device, comprising: 
 I′) the step of sticking the dicing tape integrated type adhesive sheet according to  claim 31  onto a semiconductor wafer, and    II) the step of rendering the semiconductor wafer permissible to be cut in order of I′-II or II-I′, and further comprising:    IV) the step of cutting the semiconductor wafer and the adhesive sheet of the dicing tape integrated type adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and    V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.    
     
     
         40 . The method of producing a semiconductor device according to  claim 39 , wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.