Epoxy resin composition and semiconductor device

Abstract

An epoxy resin composition for encapsulating a semiconductor chip containing (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.

1 . An epoxy resin composition for encapsulating a semiconductor chip comprising 
 (A) a crystalline epoxy resin,    (B) a phenol resin represented by general formula (1):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10,    (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and    (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.    
   
   
       2 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 1 , wherein said phenol resin (B) is represented by general formula (2):  
     
       
         
         
             
             
         
       
       wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10;  
       said (co)polymer or its derivative (C) is an epoxidized polybutadiene compound (C-1); and  
       said inorganic filler (D) is contained in the amount of 85 wt % to 95 wt % both inclusive in the total epoxy resin composition.  
     
   
   
       3 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 2 , wherein the number average molecular weight of said epoxidized polybutadiene compound (C-1) is 500 to 4000 both inclusive.  
   
   
       4 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 2 , further comprising a curing accelerator (E).  
   
   
       5 . A semiconductor device wherein a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 2 .  
   
   
       6 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 2  used for encapsulating an area mounting type semiconductor device, 
 wherein a semiconductor chip is mounted on one side of the substrate and substantially only the side of the substrate mounting the semiconductor chip is encapsulated.    
   
   
       7 . An area mounting type semiconductor device, wherein a semiconductor chip is encapsulated with the area mounting type epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 6 .  
   
   
       8 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 1 , 
 wherein said phenol resin (B) is represented by general formula (2):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10,    wherein said (co)polymer or its derivative (C) is a butadiene-acrylonitrile copolymer (C-2).    
   
   
       9 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8 , wherein said butadiene-acrylonitrile copolymer (C-2) is a carboxyl-terminated butadiene-acrylonitrile copolymer represented by general formula (3):  
     
       
         
         
             
             
         
       
       wherein Bu represents a butadiene-derived structural unit; ACN represents an acrylonitrile-derived structural unit; x is positive number of less than 1; y is positive number of less than 1; x+y=1; and z is integer of 50 to 80.  
     
   
   
       10 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8 , wherein said butadiene-acrylonitrile copolymer (C-2) is contained in the amount of 0.05 wt % to 0.5 wt % both inclusive in the total epoxy resin composition.  
   
   
       11 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8 , wherein said inorganic filler (D) is contained in the amount of 85 wt % to 95 wt % both inclusive in the total epoxy resin composition.  
   
   
       12 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8 , further comprising a curing accelerator (E).  
   
   
       13 . A semiconductor device wherein a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8 .  
   
   
       14 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 8  used for encapsulating an area mounting type semiconductor device, 
 wherein a semiconductor chip is mounted on one side of the substrate and substantially only the side of the substrate mounting the semiconductor chip is encapsulated.    
   
   
       15 . An area mounting type semiconductor device, wherein a semiconductor chip is encapsulated with the area mounting type epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 14 .  
   
   
       16 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 1 , 
 wherein said crystalline epoxy resin (A) is represented by general formula (4):                          wherein X is group selected from single bond, —O—, —S— and —C(R2) 2 —; R1 is alkyl having 1 to 6 carbon atoms; two or more R1s are the same or different; m is integer of 0 to 4; R2 is hydrogen or alkyl having 1 to 4 carbon atoms; and two or more R2s is the same or different,    said phenol resin (B) is represented by general formula (5):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3; b is integer of 0 to 4; n is average and is positive number of 1 to 5,    said (co)polymer or its derivative (C) is a polybutadiene having the intramolecular oxirane structure (C-3) with the oxirane-oxygen content of 3% to 10% both inclusive, and    said inorganic filler (D) is contained in the amount of 85 wt % to 95 wt % both inclusive in the total epoxy resin composition; and    further comprising (F) an epoxy resin represented by general formula (6):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3, b is integer of 0 to 4; and n is average and is positive number of 1 to 5.    
   
   
       17 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 16 , wherein said polybutadiene having the intramolecular oxirane structure (C-3) has a viscosity of 20 Pa·s to 700 Pa·s both inclusive at 25° C.  
   
   
       18 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 16 , further comprising a curing accelerator (E).  
   
   
       19 . A semiconductor device wherein a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 16 .  
   
   
       20 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 16  used for encapsulating an area mounting type semiconductor device, 
 wherein a semiconductor chip is mounted on one side of the substrate and substantially only the side of the substrate mounting the semiconductor chip is encapsulated.    
   
   
       21 . An area mounting type semiconductor device, wherein a semiconductor chip is encapsulated with the area mounting type epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 20 .  
   
   
       22 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 1 , 
 wherein said crystalline epoxy resin (A) is represented by general formula (4):                          wherein X is group selected from single bond, —O—, —S— and —C(R2) 2 —; R1 is alkyl having 1 to 6 carbon atoms; two or more R1s are the same or different; m is integer of 0 to 4; R2 is hydrogen or alkyl having 1 to 4 carbon atoms; and two or more R2s is the same or different,    said phenol resin (B) is represented by general formula (5):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3; b is integer of 0 to 4; n is average and is positive number of 1 to 5, and    said (co)polymer or its derivative (C) is an epoxidized polybutadiene compound (C-1),    said inorganic filler (D) is contained in the amount of 80 wt % to 94 wt % both inclusive in the total epoxy resin composition;    further comprising (F) an epoxy resin represented by general formula (6):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3, b is integer of 0 to 4; and n is average and is positive number of 1 to 5; and    wherein the weight ratio [(F)/(A)] of said epoxy resin (F) to said crystalline epoxy resin (A) represented by general formula (4) is 10/90 to 90/10 both inclusive.    
   
   
       23 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in 22, wherein said epoxidized polybutadiene compound (C-1) has the number average molecular weight of 500 to 4000 both inclusive.  
   
   
       24 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 22 , further comprising a curing accelerator (E).  
   
   
       25 . A semiconductor device wherein a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 22 .  
   
   
       26 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 22  used for encapsulating an area mounting type semiconductor device, 
 wherein a semiconductor chip is mounted on one side of the substrate and substantially only the side of the substrate mounting the semiconductor chip is encapsulated.    
   
   
       27 . An area mounting type semiconductor device, wherein a semiconductor chip is encapsulated with the area mounting type epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 26 .  
   
   
       28 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 1 , 
 wherein said crystalline epoxy resin (A) is represented by general formula (4):                          wherein X is group selected from single bond, —O—, —S— and —C(R2) 2 —; R1 is alkyl having 1 to 6 carbon atoms; two or more R1s are the same or different; m is integer of 0 to 4; R2 is hydrogen or alkyl having 1 to 4 carbon atoms; and two or more R2s is the same or different,    said phenol resin (B) is represented by general formula (5):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3; b is integer of 0 to 4; n is average and is positive number of 1 to 5, and    said (co)polymer or its derivative (C) is a butadiene-acrylonitrile copolymer (C-2); and    further comprising (F) an epoxy resin represented by general formula (6):                          wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms; two or more R1s or two or more R2s are the same or different; a is integer of 0 to 3, b is integer of 0 to 4; and n is average and is positive number of 1 to 5.    
   
   
       29 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28 , 
 wherein said butadiene-acrylonitrile copolymer (C-2) is a carboxyl-terminated butadiene-acrylonitrile copolymer represented by general formula (3):                          wherein Bu represents a butadiene-derived structural unit; ACN represents an acrylonitrile-derived structural unit; x is positive number of less than 1; y is positive number of less than 1; x+y=1; and z is integer of 50 to 80.    
   
   
       30 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28 , 
 wherein said butadiene-acrylonitrile copolymer (C-2) is contained in the amount of 0.05 wt % to 0.5 wt % both inclusive in the total epoxy resin composition.    
   
   
       31 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28 , wherein the weight ratio [(F)/(A)] of the epoxy resin (F) to the crystalline epoxy resin (A) represented by general formula (4) is 10/90 to 90/10 both inclusive.  
   
   
       32 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28 , further comprising a curing accelerator (E).  
   
   
       33 . A semiconductor device wherein a semiconductor chip is encapsulated with the epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28 .  
   
   
       34 . The epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 28  used for encapsulating an area mounting type semiconductor device, 
 wherein a semiconductor chip is mounted on one side of the substrate and substantially only the side of the substrate mounting the semiconductor chip is encapsulated.    
   
   
       35 . An area mounting type semiconductor device, wherein a semiconductor chip is encapsulated with the area mounting type epoxy resin composition for encapsulating a semiconductor chip as claimed in  claim 34.